Futoshi Tokunoh

Person

Fukuoka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Pressure-contact type semiconductor device
- Patent number 7,221,047
- Issue date May 22, 2007
- Mitsubishi Denki Kabushiki Kaisha
- Kenji Oota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pressure-contact type semiconductor device
- Patent number 6,995,464
- Issue date Feb 7, 2006
- Mitsubishi Denki Kabushiki Kaisha
- Kenji Oota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compression bonded type semiconductor device
- Patent number 6,465,881
- Issue date Oct 15, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Futoshi Tokunoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a beveled and chamfered outer peripheral...
- Patent number 6,020,603
- Issue date Feb 1, 2000
- Mitsubishi Denki Kabushiki Kaisha
- Futoshi Tokunoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compression-type power semiconductor device
- Patent number 5,640,024
- Issue date Jun 17, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Kazuhiro Morishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate turnoff thyristor with reduced gate trigger current
- Patent number 5,574,297
- Issue date Nov 12, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Nozomu Sennenbara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for adhesively attaching a semiconductor device to an elect...
- Patent number 5,543,363
- Issue date Aug 6, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Futoshi Tokunoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse conducting gate turn-off thyristor
- Patent number 5,428,230
- Issue date Jun 27, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Kazuhiro Morishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor thyristor device with recess
- Patent number 5,393,995
- Issue date Feb 28, 1995
- Mitsubishi Denki Kabushiki Kaisha
- Tsutomu Nakagawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of assembling the same
- Patent number 5,371,386
- Issue date Dec 6, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Futoshi Tokunoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a groove structure for isolation between elements...
- Patent number 5,346,849
- Issue date Sep 13, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Futoshi Tokunoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Groove structure for isolating elements comprising a GTO structure
- Patent number 5,281,847
- Issue date Jan 25, 1994
- Mitsubishi Denki Kabushik Kaisha
- Futoshi Tokunoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and electrode block for the same
- Patent number 5,189,509
- Issue date Feb 23, 1993
- Mitsubishi Denki Kabushiki Kaisha
- Katsumi Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming pattern in manufacturing semiconductor device
- Patent number 5,082,800
- Issue date Jan 21, 1992
- Mitsubishi Denki Kabushiki Kaisha
- Koji Niinobu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse conducting gate turn-off thyristor
- Patent number 5,047,824
- Issue date Sep 10, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Futoshi Tokunoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Temperature compensating contact to avoid misregistration
- Patent number 5,047,836
- Issue date Sep 10, 1991
- Mitsubishi Denki Kabushiki Kaisha
- Futoshi Tokunoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,881,118
- Issue date Nov 14, 1989
- Mitsubishi Denki Kabushiki Kaisha
- Kazuhiko Niwayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a process of producing same
- Patent number 4,835,119
- Issue date May 30, 1989
- Mitsubishi Kenki Kabushiki Kaisha
- Futoshi Tokunoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and a process of producing same
- Patent number 4,719,500
- Issue date Jan 12, 1988
- Mitsubishi Denki Kabushiki Kaisha
- Futoshi Tokunoh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Pressure-contact type semiconductor device
- Publication number 20060027910
- Publication date Feb 9, 2006
- Mitsubishi Denki Kabushiki Kaisha
- Kenji Oota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Pressure-contact type semiconductor device
- Publication number 20040183093
- Publication date Sep 23, 2004
- Mitsubishi Denki Kabushiki Kaisha
- Kenji Oota
- H01 - BASIC ELECTRIC ELEMENTS

Futoshi Tokunoh

Person

Patents Grantslast 30 patents

Pressure-contact type semiconductor device

Pressure-contact type semiconductor device

Compression bonded type semiconductor device

Semiconductor device with a beveled and chamfered outer peripheral...

Compression-type power semiconductor device

Gate turnoff thyristor with reduced gate trigger current

Process for adhesively attaching a semiconductor device to an elect...

Reverse conducting gate turn-off thyristor

Semiconductor thyristor device with recess

Semiconductor device and method of assembling the same

Method of making a groove structure for isolation between elements...

Groove structure for isolating elements comprising a GTO structure

Semiconductor device and electrode block for the same

Method of forming pattern in manufacturing semiconductor device

Reverse conducting gate turn-off thyristor

Temperature compensating contact to avoid misregistration

Semiconductor device

Semiconductor device and a process of producing same

Semiconductor device and a process of producing same

Patents Applicationslast 30 patents

Pressure-contact type semiconductor device

Pressure-contact type semiconductor device