Fwu-Iuan Hshieh

Person

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for manufacturing trench MOSFET with implanted drift region
- Patent number 8,461,001
- Issue date Jun 11, 2013
- Force-MOS Technology Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched MOSFETS with improved gate-drain (GD) clamp diodes
- Patent number 8,389,354
- Issue date Mar 5, 2013
- Force-MOS Technology Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing trenched MOSFETs with embedded Schottky in...
- Patent number 8,252,645
- Issue date Aug 28, 2012
- Force-MOS Technology Corporation
- Fwu-ruan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET with double epitaxial structure
- Patent number 8,159,021
- Issue date Apr 17, 2012
- Force—MOS Technology Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Elimination of gate oxide weak spot in deep trench
- Patent number 8,115,252
- Issue date Feb 14, 2012
- M-Mos Sdn.Bhd
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor (IGBT) with monolithic deep body...
- Patent number 8,058,670
- Issue date Nov 15, 2011
- Force—MOS Technology Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench metal oxide semiconductor field effect transistor (MOSFET) w...
- Patent number 8,022,471
- Issue date Sep 20, 2011
- Force-MOS Technology Corp.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tungsten plug drain extension
- Patent number 7,977,745
- Issue date Jul 12, 2011
- Third Dimension (3D) Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depletion mode trench MOSFET for improved efficiency of DC/DC conve...
- Patent number 7,929,321
- Issue date Apr 19, 2011
- Force-MOS Technology Corp.
- Fwu-Iuan Hshieh
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Trench MOSFET with embedded junction barrier Schottky diode
- Patent number 7,863,685
- Issue date Jan 4, 2011
- Force-MOS Technology Corp.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched MOSFET device with trenched contacts
- Patent number 7,816,729
- Issue date Oct 19, 2010
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET with cell layout, ruggedness, truncated corners
- Patent number 7,812,409
- Issue date Oct 12, 2010
- Force-MOS Technology Corp.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Closed trench MOSFET with floating trench rings as termination
- Patent number 7,800,185
- Issue date Sep 21, 2010
- Force-MOS Technology Corp.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for high voltage superjunction termination
- Patent number 7,772,086
- Issue date Aug 10, 2010
- Third Dimension (3D) Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for high voltage superjunction termination
- Patent number 7,759,204
- Issue date Jul 20, 2010
- Third Dimension Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a superjunction device with conventional te...
- Patent number 7,704,864
- Issue date Apr 27, 2010
- Third Dimension (3D) Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density trench MOSFET with reduced on-resistance
- Patent number 7,687,851
- Issue date Mar 30, 2010
- M-MOS Semiconductor Sdn. Bhd.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device configuration and method to manufacture trench MOSFET with s...
- Patent number 7,646,058
- Issue date Jan 12, 2010
- Force-MOS Technology Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET with implanted drift region
- Patent number 7,633,121
- Issue date Dec 15, 2009
- Force-MOS Technology Corp.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET with terraced gate and manufacturing method thereof
- Patent number 7,629,646
- Issue date Dec 8, 2009
- Force MOS Technology Co., Ltd.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for high voltage superjunction termination
- Patent number 7,622,787
- Issue date Nov 24, 2009
- Third Dimension (3D) Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched MOSFET device configuration with reduced mask processes
- Patent number 7,612,407
- Issue date Nov 3, 2009
- Force-MOS Technology Corp. Ltd
- Fwu-Juan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density hybrid MOSFET device
- Patent number 7,592,650
- Issue date Sep 22, 2009
- M-MOS Semiconductor Sdn. Bhd.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched MOSFETs with improved gate-drain (GD) clamp diodes
- Patent number 7,511,357
- Issue date Mar 31, 2009
- Force-MOS Technology Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tungsten plug drain extension
- Patent number 7,439,583
- Issue date Oct 21, 2008
- Third Dimension (3D) Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a superjunction device
- Patent number 7,410,891
- Issue date Aug 12, 2008
- Third Dimension (3D) Semicondcutor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a superjunction device with wide mesas
- Patent number 7,364,994
- Issue date Apr 29, 2008
- Third Dimension (3D) Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for high voltage superjunction termination
- Patent number 7,354,818
- Issue date Apr 8, 2008
- Third Dimension (3D) Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planarization method of manufacturing a superjunction device
- Patent number 7,199,006
- Issue date Apr 3, 2007
- Third Dimension (3D) Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a superjunction device
- Patent number 7,109,110
- Issue date Sep 19, 2006
- Third Dimension (3D) Semiconductor, Inc.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Trench metal oxide semiconductor field effect transistor (MOSFET) w...
- Publication number 20120083083
- Publication date Apr 5, 2012
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench mosfet with integrated schottky rectifier in same cell
- Publication number 20120037983
- Publication date Feb 16, 2012
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Equal Potential Ring Structures of Power Semiconductor with Trenche...
- Publication number 20120037954
- Publication date Feb 16, 2012
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated gate bipolar transistor (IGBT) with monolithic deep body...
- Publication number 20100308370
- Publication date Dec 9, 2010
- Force-MOS Technology Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench insulated gate bipolar transistor (GBT) with improved emitte...
- Publication number 20100193835
- Publication date Aug 5, 2010
- Force-MOS Technology Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench metal oxide semiconductor field effect transistor (MOSFET) w...
- Publication number 20100163975
- Publication date Jul 1, 2010
- Force-MOS Technology Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for manufacturing trench MOSFET with implanted drift region
- Publication number 20100087039
- Publication date Apr 8, 2010
- Force-MOS Technology Corp.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Depletion mode trench MOSFET for improved efficiency of DC/DC conve...
- Publication number 20100044796
- Publication date Feb 25, 2010
- Force-MOS Technology Corporation
- Fwu-Iuan Hshieh
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Method of Manufacturing Trenched Mosfets with Embedded Schottky in...
- Publication number 20090305475
- Publication date Dec 10, 2009
- Force-MOS Technology Corporation
- Fwu-ruan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MOSFET with embedded junction barrier Schottky diode
- Publication number 20090294859
- Publication date Dec 3, 2009
- Force-MOS Technology Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trenched mosfets with improved gate-drain (GD) clamp diodes
- Publication number 20090219657
- Publication date Sep 3, 2009
- Force-MOS Technology Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench mosfet with double epitaxial structure
- Publication number 20090206395
- Publication date Aug 20, 2009
- Force-MOS Technology Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MOSFET with implanted drift region
- Publication number 20090108338
- Publication date Apr 30, 2009
- Force-MOS Technology Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MOSFET with thick bottom oxide tub
- Publication number 20090085107
- Publication date Apr 2, 2009
- Force-MOS Technology Corp.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MOSFET with multiple P-bodies for ruggedness and on-resistan...
- Publication number 20090026533
- Publication date Jan 29, 2009
- Force-MOS Technology Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNGSTEN PLUG DRAIN EXTENSION
- Publication number 20080315327
- Publication date Dec 25, 2008
- THIRD DIMENSION (3D) SEMICONDUCTOR, INC.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device configuration and method to manufacture trench mosfet with s...
- Publication number 20080303081
- Publication date Dec 11, 2008
- Force-MOS Technology Corp.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR HIGH VOLTAGE SUPERJUNCTION TERMINATION
- Publication number 20080290442
- Publication date Nov 27, 2008
- THIRD DIMENSION (3D) SEMICONDUCTOR, INC.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR HIGH VOLTAGE SUPERJUNCTION TERMINATION
- Publication number 20080283956
- Publication date Nov 20, 2008
- THIRD DIMENSION (3D) SEMICONDUCTOR, INC.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trenched MOSFETs with improved gate-drain (GD) clamp diodes
- Publication number 20080258224
- Publication date Oct 23, 2008
- Force-MOS Technology Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trenched mosfets with embedded schottky in the same cell
- Publication number 20080246082
- Publication date Oct 9, 2008
- Force-MOS Technology Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Closed trench MOSFET with floating trench rings as termination
- Publication number 20080179662
- Publication date Jul 31, 2008
- Force-MOS Technology Corporation
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR HIGH VOLTAGE SUPERJUNCTION TERMINATION
- Publication number 20080164521
- Publication date Jul 10, 2008
- THIRD DIMENSION (3D) SEMICONDUCTOR, INC.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR HIGH VOLTAGE SUPERJUNCTION TERMINATION
- Publication number 20080166855
- Publication date Jul 10, 2008
- THIRD DIMENSION (3D) SEMICONDUCTOR, INC.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MOSFET with cell layout to improve ruggedness
- Publication number 20080128829
- Publication date Jun 5, 2008
- Force-MOS Technology Corp.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trenched mosfet device configuration with reduced mask processes
- Publication number 20080121986
- Publication date May 29, 2008
- Force-MOS Technology Corp., LTD.
- Fwu-Juan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET WITH ESD TRENCH CAPACITOR
- Publication number 20080042208
- Publication date Feb 21, 2008
- FORCE MOS TECHNOLOGY CO., LTD.
- FWU-IUAN Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET WITH COPPER METAL CONNECTIONS
- Publication number 20080042222
- Publication date Feb 21, 2008
- FORCE MOS TECHNOLOGY CO., LTD.
- FWU-IUAN Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET WITH TERRACED GATE AND MANUFACTURING METHOD THEREOF
- Publication number 20080042194
- Publication date Feb 21, 2008
- FORCE MOS TECHNOLOGY CO., LTD.
- FWU-IUAN Hshieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trenched MOSFET device with trenched contacts
- Publication number 20080035988
- Publication date Feb 14, 2008
- Force-MOS Technology Corp., LTD.
- Fwu-Iuan Hshieh
- H01 - BASIC ELECTRIC ELEMENTS

Fwu-Iuan Hshieh

Person

Patents Grantslast 30 patents

Methods for manufacturing trench MOSFET with implanted drift region

Trenched MOSFETS with improved gate-drain (GD) clamp diodes

Method of manufacturing trenched MOSFETs with embedded Schottky in...

Trench MOSFET with double epitaxial structure

Elimination of gate oxide weak spot in deep trench

Insulated gate bipolar transistor (IGBT) with monolithic deep body...

Trench metal oxide semiconductor field effect transistor (MOSFET) w...

Tungsten plug drain extension

Depletion mode trench MOSFET for improved efficiency of DC/DC conve...

Trench MOSFET with embedded junction barrier Schottky diode

Trenched MOSFET device with trenched contacts

Trench MOSFET with cell layout, ruggedness, truncated corners

Closed trench MOSFET with floating trench rings as termination

Process for high voltage superjunction termination

Process for high voltage superjunction termination

Method of manufacturing a superjunction device with conventional te...

High density trench MOSFET with reduced on-resistance

Device configuration and method to manufacture trench MOSFET with s...

Trench MOSFET with implanted drift region

Trench MOSFET with terraced gate and manufacturing method thereof

Process for high voltage superjunction termination

Trenched MOSFET device configuration with reduced mask processes

High density hybrid MOSFET device

Trenched MOSFETs with improved gate-drain (GD) clamp diodes

Tungsten plug drain extension

Method of manufacturing a superjunction device

Method for manufacturing a superjunction device with wide mesas

Process for high voltage superjunction termination

Planarization method of manufacturing a superjunction device

Method of manufacturing a superjunction device

Patents Applicationslast 30 patents

Trench metal oxide semiconductor field effect transistor (MOSFET) w...

Trench mosfet with integrated schottky rectifier in same cell

Equal Potential Ring Structures of Power Semiconductor with Trenche...

Insulated gate bipolar transistor (IGBT) with monolithic deep body...

Trench insulated gate bipolar transistor (GBT) with improved emitte...

Trench metal oxide semiconductor field effect transistor (MOSFET) w...

Methods for manufacturing trench MOSFET with implanted drift region

Depletion mode trench MOSFET for improved efficiency of DC/DC conve...

Method of Manufacturing Trenched Mosfets with Embedded Schottky in...

Trench MOSFET with embedded junction barrier Schottky diode

Trenched mosfets with improved gate-drain (GD) clamp diodes

Trench mosfet with double epitaxial structure

Trench MOSFET with implanted drift region

Trench MOSFET with thick bottom oxide tub

Trench MOSFET with multiple P-bodies for ruggedness and on-resistan...

TUNGSTEN PLUG DRAIN EXTENSION

Device configuration and method to manufacture trench mosfet with s...

PROCESS FOR HIGH VOLTAGE SUPERJUNCTION TERMINATION

PROCESS FOR HIGH VOLTAGE SUPERJUNCTION TERMINATION

Trenched MOSFETs with improved gate-drain (GD) clamp diodes

Trenched mosfets with embedded schottky in the same cell

Closed trench MOSFET with floating trench rings as termination

PROCESS FOR HIGH VOLTAGE SUPERJUNCTION TERMINATION

PROCESS FOR HIGH VOLTAGE SUPERJUNCTION TERMINATION

Trench MOSFET with cell layout to improve ruggedness

Trenched mosfet device configuration with reduced mask processes

TRENCH MOSFET WITH ESD TRENCH CAPACITOR

TRENCH MOSFET WITH COPPER METAL CONNECTIONS

TRENCH MOSFET WITH TERRACED GATE AND MANUFACTURING METHOD THEREOF

Trenched MOSFET device with trenched contacts