Gan WANG

Person

Fishkill, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Replacement gate MOSFET with a high performance gate electrode
- Patent number 9,337,289
- Issue date May 10, 2016
- GLOBALFOUNDRIES Inc.
- Zhengwen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially-blocked well implant to improve diode ideality with SiGe...
- Patent number 9,312,358
- Issue date Apr 12, 2016
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Partially-blocked well implant to improve diode ideality with SiGe...
- Patent number 9,252,234
- Issue date Feb 2, 2016
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming a self-aligned maskless junction butting for in...
- Patent number 9,209,200
- Issue date Dec 8, 2015
- GLOBALFOUNDRIES Inc.
- Edward P. Maciejewski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure and method to adjust threshold voltage in a FinFET...
- Patent number 9,171,954
- Issue date Oct 27, 2015
- GLOBALFOUNDRIES U.S. 2 LLC
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator device including stand-alone well implan...
- Patent number 9,105,725
- Issue date Aug 11, 2015
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator device including stand-alone well implan...
- Patent number 9,059,291
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for dielectric isolation in a fin field effect...
- Patent number 9,034,715
- Issue date May 19, 2015
- International Business Machines Corporation
- Yanfeng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate MOSFET with a high performance gate electrode
- Patent number 8,969,933
- Issue date Mar 3, 2015
- International Business Machines Corporation
- Zhengwen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure and method to adjust threshold voltage in a FinFET...
- Patent number 8,932,949
- Issue date Jan 13, 2015
- International Business Machines Corporation
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-adjusting latch-up resistance for CMOS devices
- Patent number 8,841,732
- Issue date Sep 23, 2014
- GLOBALFOUNDRIES, INC.
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET structures with trench implantation to improve back channel lea...
- Patent number 8,809,953
- Issue date Aug 19, 2014
- International Business Machines Corporation
- David M. Fried
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET structure and method to adjust threshold voltage in a FinFET...
- Patent number 8,772,149
- Issue date Jul 8, 2014
- International Business Machines Corporation
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement gate MOSFET with a high performance gate electrode
- Patent number 8,592,266
- Issue date Nov 26, 2013
- International Business Machines Corporation
- Zhengwen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact combined with a replacement metal gate/high-K...
- Patent number 8,481,415
- Issue date Jul 9, 2013
- International Business Machines Corporation
- Jun Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET structures with trench implantation to improve back channel lea...
- Patent number 8,236,632
- Issue date Aug 7, 2012
- International Business Machines Corporation
- David M. Fried
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement metal gate method
- Patent number 8,084,346
- Issue date Dec 27, 2011
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FINFET DEVICE WITH LOW RESISTANCE FINS
- Publication number 20180108654
- Publication date Apr 19, 2018
- GLOBALFOUNDRIES, Inc.
- Viorel C. ONTALUS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE MOSFET WITH A HIGH PERFORMANCE GATE ELECTRODE
- Publication number 20150137269
- Publication date May 21, 2015
- International Business Machines Corporation
- Zhengwen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED MASKLESS JUNCTION BUTTING FOR INTEGRATED CIRCUITS
- Publication number 20150108571
- Publication date Apr 23, 2015
- International Business Machines Corporation
- Edward P. Maciejewski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR DEVICE INCLUDING STAND-ALONE WELL IMPLAN...
- Publication number 20150072481
- Publication date Mar 12, 2015
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR DEVICE INCLUDING STAND-ALONE WELL IMPLAN...
- Publication number 20150069513
- Publication date Mar 12, 2015
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET STRUCTURE AND METHOD TO ADJUST THRESHOLD VOLTAGE IN A FINFET...
- Publication number 20150054093
- Publication date Feb 26, 2015
- International Business Machines Corporation
- Eduard A. CARTIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR DIELECTRIC ISOLATION IN A FIN FIELD EFFECT...
- Publication number 20140264591
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Yanfeng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET STRUCTURE AND METHOD TO ADJUST THRESHOLD VOLTAGE IN A FINFET...
- Publication number 20140217504
- Publication date Aug 7, 2014
- International Business Machines Corporation
- Eduard A. CARTIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIALLY-BLOCKED WELL IMPLANT TO IMPROVE DIODE IDEALITY WITH SiGe...
- Publication number 20140061857
- Publication date Mar 6, 2014
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIALLY-BLOCKED WELL IMPLANT TO IMPROVE DIODE IDEALITY WITH SiGe...
- Publication number 20140065807
- Publication date Mar 6, 2014
- International Business Machines Corporation
- Dechao Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH HEAT SINK
- Publication number 20140008756
- Publication date Jan 9, 2014
- International Business Machines Corporation
- Chengwen Pei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE MOSFET WITH A HIGH PERFORMANCE GATE ELECTRODE
- Publication number 20130175641
- Publication date Jul 11, 2013
- International Business Machines Corporation
- Zhengwen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET STRUCTURE AND METHOD TO ADJUST THRESHOLD VOLTAGE IN A FINFET...
- Publication number 20130099313
- Publication date Apr 25, 2013
- International Business Machines Corporation
- Eduard A. CARTIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ADJUSTING LATCH-UP RESISTANCE FOR CMOS DEVICES
- Publication number 20130032890
- Publication date Feb 7, 2013
- Yanxiang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FET STRUCTURES WITH TRENCH IMPLANTATION TO IMPROVE BACK CHANNEL LEA...
- Publication number 20120187490
- Publication date Jul 26, 2012
- International Business Machines Corporation
- DAVID M FRIED
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT COMBINED WITH A REPLACEMENT METAL GATE/HIGH-K...
- Publication number 20120139062
- Publication date Jun 7, 2012
- International Business Machines Corporation
- Jun Yuan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE MOSFET WITH A HIGH PERFORMANCE GATE ELECTRODE
- Publication number 20120104469
- Publication date May 3, 2012
- International Business Machines Corporation
- Zhengwen Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FET STRUCTURES WITH TRENCH IMPLANTATION TO IMPROVE BACK CHANNEL LEA...
- Publication number 20120086077
- Publication date Apr 12, 2012
- International Business Machines Corporation
- DAVID M FRIED
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Replacement gate MOSFET with a high performance gate electrode

Partially-blocked well implant to improve diode ideality with SiGe...

Partially-blocked well implant to improve diode ideality with SiGe...

Methods for forming a self-aligned maskless junction butting for in...

FinFET structure and method to adjust threshold voltage in a FinFET...

Semiconductor-on-insulator device including stand-alone well implan...

Semiconductor-on-insulator device including stand-alone well implan...

Method and structure for dielectric isolation in a fin field effect...

Replacement gate MOSFET with a high performance gate electrode

FinFET structure and method to adjust threshold voltage in a FinFET...

Self-adjusting latch-up resistance for CMOS devices

FET structures with trench implantation to improve back channel lea...

FinFET structure and method to adjust threshold voltage in a FinFET...

Replacement gate MOSFET with a high performance gate electrode

Self-aligned contact combined with a replacement metal gate/high-K...

FET structures with trench implantation to improve back channel lea...

Replacement metal gate method

Patents Applicationslast 30 patents

FINFET DEVICE WITH LOW RESISTANCE FINS

REPLACEMENT GATE MOSFET WITH A HIGH PERFORMANCE GATE ELECTRODE

SELF-ALIGNED MASKLESS JUNCTION BUTTING FOR INTEGRATED CIRCUITS

SEMICONDUCTOR-ON-INSULATOR DEVICE INCLUDING STAND-ALONE WELL IMPLAN...

SEMICONDUCTOR-ON-INSULATOR DEVICE INCLUDING STAND-ALONE WELL IMPLAN...

FINFET STRUCTURE AND METHOD TO ADJUST THRESHOLD VOLTAGE IN A FINFET...

METHOD AND STRUCTURE FOR DIELECTRIC ISOLATION IN A FIN FIELD EFFECT...

FINFET STRUCTURE AND METHOD TO ADJUST THRESHOLD VOLTAGE IN A FINFET...

PARTIALLY-BLOCKED WELL IMPLANT TO IMPROVE DIODE IDEALITY WITH SiGe...

PARTIALLY-BLOCKED WELL IMPLANT TO IMPROVE DIODE IDEALITY WITH SiGe...

DEEP TRENCH HEAT SINK

REPLACEMENT GATE MOSFET WITH A HIGH PERFORMANCE GATE ELECTRODE

FINFET STRUCTURE AND METHOD TO ADJUST THRESHOLD VOLTAGE IN A FINFET...

SELF-ADJUSTING LATCH-UP RESISTANCE FOR CMOS DEVICES

FET STRUCTURES WITH TRENCH IMPLANTATION TO IMPROVE BACK CHANNEL LEA...

SELF-ALIGNED CONTACT COMBINED WITH A REPLACEMENT METAL GATE/HIGH-K...

REPLACEMENT GATE MOSFET WITH A HIGH PERFORMANCE GATE ELECTRODE

FET STRUCTURES WITH TRENCH IMPLANTATION TO IMPROVE BACK CHANNEL LEA...