Ganesh UPADHYAYA

Person

Pleasanton, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Atomic layer deposition and etch in a single plasma chamber for cri...
- Patent number 11,211,253
- Issue date Dec 28, 2021
- Lam Research Corportation
- Xiang Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition and etch for reducing roughness
- Patent number 11,170,997
- Issue date Nov 9, 2021
- Lam Research Corporation
- Xiang Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition and etch in a single plasma chamber for cri...
- Patent number 10,734,238
- Issue date Aug 4, 2020
- Lam Research Corporation
- Xiang Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition and etch for reducing roughness
- Patent number 10,658,174
- Issue date May 19, 2020
- Lam Research Corporation
- Xiang Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer deposition and etch in a single plasma chamber for fin...
- Patent number 10,515,815
- Issue date Dec 24, 2019
- Lam Research Corporation
- Xiang Zhou
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Determination of semiconductor chamber operating parameters for the...
- Patent number 9,466,466
- Issue date Oct 11, 2016
- Lam Research Corporation
- Qinghua Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Residue free systems and methods for isotropically etching silicon...
- Patent number 9,385,003
- Issue date Jul 5, 2016
- Lam Research Corporation
- Ming-Shu Kuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures with coplanar recessed gate layers and fab...
- Patent number 9,252,238
- Issue date Feb 2, 2016
- Lam Research Corporation
- Kristina Trevino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon nitride dry trim without top pulldown
- Patent number 8,431,461
- Issue date Apr 30, 2013
- Lam Research Corporation
- Qinghua Zhong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELECTIVE ETCHING AND DEPOSITION OF MEMORY LAYERS TO PROVIDE CAPACI...
- Publication number 20230320062
- Publication date Oct 5, 2023
- LAM RESEARCH CORPORATION
- Ratndeep SRIVASTAVA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ATOMIC LAYER DEPOSITION AND ETCH IN A SINGLE PLASMA CHAMBER FOR CRI...
- Publication number 20200328087
- Publication date Oct 15, 2020
- LAM RESEARCH CORPORATION
- Xiang Zhou
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ATOMIC LAYER DEPOSITION AND ETCH FOR REDUCING ROUGHNESS
- Publication number 20200243326
- Publication date Jul 30, 2020
- LAM RESEARCH CORPORATION
- Xiang Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER DEPOSITION AND ETCH IN A SINGLE PLASMA CHAMBER FOR CRI...
- Publication number 20190157095
- Publication date May 23, 2019
- LAM RESEARCH CORPORATION
- Xiang Zhou
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
ATOMIC LAYER DEPOSITION AND ETCH FOR REDUCING ROUGHNESS
- Publication number 20190157066
- Publication date May 23, 2019
- LAM RESEARCH CORPORATION
- Xiang Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER DEPOSITION AND ETCH IN A SINGLE PLASMA CHAMBER FOR FIN...
- Publication number 20190157096
- Publication date May 23, 2019
- LAM RESEARCH CORPORATION
- Xiang Zhou
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH COPLANAR RECESSED GATE LAYERS AND FAB...
- Publication number 20160049495
- Publication date Feb 18, 2016
- LAM RESEARCH CORPORATION
- Kristina TREVINO
- H01 - BASIC ELECTRIC ELEMENTS

Ganesh UPADHYAYA

Person

Patents Grantslast 30 patents

Atomic layer deposition and etch in a single plasma chamber for cri...

Atomic layer deposition and etch for reducing roughness

Atomic layer deposition and etch in a single plasma chamber for cri...

Atomic layer deposition and etch for reducing roughness

Atomic layer deposition and etch in a single plasma chamber for fin...

Determination of semiconductor chamber operating parameters for the...

Residue free systems and methods for isotropically etching silicon...

Semiconductor structures with coplanar recessed gate layers and fab...

Silicon nitride dry trim without top pulldown

Patents Applicationslast 30 patents

SELECTIVE ETCHING AND DEPOSITION OF MEMORY LAYERS TO PROVIDE CAPACI...

ATOMIC LAYER DEPOSITION AND ETCH IN A SINGLE PLASMA CHAMBER FOR CRI...

ATOMIC LAYER DEPOSITION AND ETCH FOR REDUCING ROUGHNESS

ATOMIC LAYER DEPOSITION AND ETCH IN A SINGLE PLASMA CHAMBER FOR CRI...

ATOMIC LAYER DEPOSITION AND ETCH FOR REDUCING ROUGHNESS

ATOMIC LAYER DEPOSITION AND ETCH IN A SINGLE PLASMA CHAMBER FOR FIN...

SEMICONDUCTOR STRUCTURES WITH COPLANAR RECESSED GATE LAYERS AND FAB...