Gary E. Miner

Person

Newark, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Tailoring nitrogen profile in silicon oxynitride using rapid therma...
- Patent number 7,658,973
- Issue date Feb 9, 2010
- Applied Materials, Inc.
- Pravin K. Narwankar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrode dopant activation method for semiconductor manufactu...
- Patent number 7,611,976
- Issue date Nov 3, 2009
- Applied Materials, Inc.
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrode structures
- Patent number 7,541,650
- Issue date Jun 2, 2009
- Applied Materials, Inc.
- Steven C. H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrode structures and methods of manufacture
- Patent number 7,317,229
- Issue date Jan 8, 2008
- Applied Materials, Inc.
- Steven C. H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrode dopant activation method for semiconductor manufactu...
- Patent number 7,078,302
- Issue date Jul 18, 2006
- Applied Materials, Inc.
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus for exposing a substrate to plasma radicals
- Patent number 6,450,116
- Issue date Sep 17, 2002
- Applied Materials, Inc.
- David B. Noble
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and apparatus for insitu vapor generation
- Patent number 6,410,456
- Issue date Jun 25, 2002
- Applied Materials, Inc.
- Christian M. Gronet
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method and apparatus for measuring substrate temperatures
- Patent number 6,179,466
- Issue date Jan 30, 2001
- Applied Materials, Inc.
- Bruce W. Peuse
- G01 - MEASURING TESTING
Information Patent Grant
Method for insitu vapor generation for forming an oxide on a substrate
- Patent number 6,159,866
- Issue date Dec 12, 2000
- Applied Materials, Inc.
- Christian M. Gronet
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of oxidizing a substrate in the presence of nitride and oxyn...
- Patent number 6,114,258
- Issue date Sep 5, 2000
- Applied Materials, Inc.
- Gary E. Miner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for insitu vapor generation
- Patent number 6,037,273
- Issue date Mar 14, 2000
- Applied Materials, Inc.
- Christian M. Gronet
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method of calibrating a temperature measurement system
- Patent number 5,848,842
- Issue date Dec 15, 1998
- Applied Materials, Inc.
- Bruce W. Peuse
- G01 - MEASURING TESTING
Information Patent Grant
Method and apparatus for measuring substrate temperatures
- Patent number 5,755,511
- Issue date May 26, 1998
- Applied Materials, Inc.
- Bruce W. Peuse
- G01 - MEASURING TESTING
Information Patent Grant
Method and apparatus for measuring substrate temperatures
- Patent number 5,660,472
- Issue date Aug 26, 1997
- Applied Materials, Inc.
- Bruce W. Peuse
- G01 - MEASURING TESTING

Patents Applicationslast 30 patents

Information Patent Application
SYSTEM-ON-A-CHIP (SOC) INTEGRATION OF RESISTIVE RANDOM-ACCESS MEMOR...
- Publication number 20240237359
- Publication date Jul 11, 2024
- TetraMem Inc.
- Ning Ge
Information Patent Application
TAILORING NITROGEN PROFILE IN SILICON OXYNITRIDE USING RAPID THERMA...
- Publication number 20100090294
- Publication date Apr 15, 2010
- Pravin K. Narwankar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Electrode Structures
- Publication number 20080142893
- Publication date Jun 19, 2008
- APPLIED MATERIALS, INC.
- Steven C. H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate Electrode structures and methods of manufacture
- Publication number 20070018244
- Publication date Jan 25, 2007
- APPLIED MATERIALS, INC.
- Steven C. H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ELECTRODE DOPANT ACTIVATION METHOD FOR SEMICONDUCTOR MANUFACTU...
- Publication number 20060286763
- Publication date Dec 21, 2006
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate electrode dopant activation method for semiconductor manufactu...
- Publication number 20050186765
- Publication date Aug 25, 2005
- Yi Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Tailoring nitrogen profile in silicon oxynitride using rapid therma...
- Publication number 20040248392
- Publication date Dec 9, 2004
- APPLIED MATERIALS, INC.
- Pravin K. Narwankar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and apparatus for insitu vapor generation
- Publication number 20020136831
- Publication date Sep 26, 2002
- Christian M. Gronet
- C01 - INORGANIC CHEMISTRY
Information Patent Application
APPARATUS AND METHOD FOR EXPOSING A SUBSTRATE TO PLASMA RADICALS
- Publication number 20020073925
- Publication date Jun 20, 2002
- DAVID B. NOBLE
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Gary E. Miner

Person

Patents Grantslast 30 patents

Tailoring nitrogen profile in silicon oxynitride using rapid therma...

Gate electrode dopant activation method for semiconductor manufactu...

Gate electrode structures

Gate electrode structures and methods of manufacture

Gate electrode dopant activation method for semiconductor manufactu...

Apparatus for exposing a substrate to plasma radicals

Method and apparatus for insitu vapor generation

Method and apparatus for measuring substrate temperatures

Method for insitu vapor generation for forming an oxide on a substrate

Method of oxidizing a substrate in the presence of nitride and oxyn...

Method and apparatus for insitu vapor generation

Method of calibrating a temperature measurement system

Method and apparatus for measuring substrate temperatures

Method and apparatus for measuring substrate temperatures

Patents Applicationslast 30 patents

SYSTEM-ON-A-CHIP (SOC) INTEGRATION OF RESISTIVE RANDOM-ACCESS MEMOR...

TAILORING NITROGEN PROFILE IN SILICON OXYNITRIDE USING RAPID THERMA...

Gate Electrode Structures

Gate Electrode structures and methods of manufacture

GATE ELECTRODE DOPANT ACTIVATION METHOD FOR SEMICONDUCTOR MANUFACTU...

Gate electrode dopant activation method for semiconductor manufactu...

Tailoring nitrogen profile in silicon oxynitride using rapid therma...

Method and apparatus for insitu vapor generation

APPARATUS AND METHOD FOR EXPOSING A SUBSTRATE TO PLASMA RADICALS