This application is a continuation-in-part of application Ser. No. 09/298,064, filed Apr. 22, 1999 and entitled “Apparatus and Method for Exposing a Substrate to Plasma Radicals,” which is incorporated herein by reference.
Number | Name | Date | Kind |
---|---|---|---|
4401054 | Matsuo et al. | Aug 1983 | A |
4724159 | Yamazaki | Feb 1988 | A |
4857132 | Fisher | Aug 1989 | A |
5082517 | Moslehi | Jan 1992 | A |
5138973 | Davis et al. | Aug 1992 | A |
5294571 | Fujishiro et al. | Mar 1994 | A |
5403434 | Moslehi | Apr 1995 | A |
5685949 | Yashima | Nov 1997 | A |
5902404 | Fong et al. | May 1999 | A |
6029602 | Bhatnagar | Feb 2000 | A |
Number | Date | Country |
---|---|---|
19611538 | Aug 1997 | DE |
0291181 | Nov 1988 | EP |
0326191 | Aug 1989 | EP |
0800200 | Oct 1997 | EP |
0886308 | Dec 1998 | EP |
0 973189 | Jan 2000 | EP |
06-333857 | Feb 1994 | JP |
Entry |
---|
Hattangady et al., “Controlled nitrogen incorporation at the gate oxide surface”, Appl. Phys. Lett. vol. 66, No. 25, Jun. 19, 1995, pp. 3495-3497. |
Kaluri et al., “Nitrogen incorporation in thin oxides by constant current N2O plasma anodization of silicon and N2 plasma nitridation of silicon oxides”, Appl. Phys. Lett. vol. 69, No. 8, Aug. 19, 1996, pp. 1053-1055. |
Kaluri et al., “Constant Current N2O Plasma Anodization of Silicon”, J. Electrochem. Soc. vol. 144, No. 6, Jun. 1997, pp. 2200-2205. |
Kraft et al., “Surface nitridation of silicon dioxide with a high density nitrogen plasma”, J. Vac. Sci. Technol, B. vol. 15, No. 4, Jul./Aug. 1997, pp. 967-970. |
Number | Date | Country | |
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Parent | 09/298064 | Apr 1999 | US |
Child | 09/439476 | US |