Geeng-Chuan Chern

Person

Campbell, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Trench capacitor having improved capacitance and fabrication method...
- Patent number 11,776,992
- Issue date Oct 3, 2023
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor memory device with buried capa...
- Patent number 11,610,893
- Issue date Mar 21, 2023
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating magnetic memory device
- Patent number 11,545,617
- Issue date Jan 3, 2023
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- G11 - INFORMATION STORAGE
Information Patent Grant
Physically unclonable function circuit having lower gate-to-source/...
- Patent number 11,437,082
- Issue date Sep 6, 2022
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
One-time programmable memory device and fabrication method thereof
- Patent number 11,362,097
- Issue date Jun 14, 2022
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked capacitor with horizontal and vertical fin structures and m...
- Patent number 11,322,500
- Issue date May 3, 2022
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
1.5-transistor (1.5T) one time programmable (OTP) memory with thin...
- Patent number 11,315,937
- Issue date Apr 26, 2022
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory device with buried capacitor and fin-like elec...
- Patent number 11,296,090
- Issue date Apr 5, 2022
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device with multiple sidewall spacers covering side...
- Patent number 11,217,744
- Issue date Jan 4, 2022
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory device and method for manufacturing the same
- Patent number 11,177,431
- Issue date Nov 16, 2021
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- G11 - INFORMATION STORAGE
Information Patent Grant
MOS transistor having lower gate-to-source/drain breakdown voltage...
- Patent number 11,152,381
- Issue date Oct 19, 2021
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench capacitor having improved capacitance and fabrication method...
- Patent number 11,139,368
- Issue date Oct 5, 2021
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device with shallow buried capacitor and fabri...
- Patent number 11,114,442
- Issue date Sep 7, 2021
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One time programmable (OTP) bits for physically unclonable functions
- Patent number 11,114,140
- Issue date Sep 7, 2021
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- G11 - INFORMATION STORAGE
Information Patent Grant
One-time programmable memory device and method for operating the same
- Patent number 11,074,985
- Issue date Jul 27, 2021
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and systems and methods for selecting memory cells in...
- Patent number 9,595,335
- Issue date Mar 14, 2017
- Atmel Corporation
- Tsung-Ching Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile floating gate memory cells
- Patent number 9,502,581
- Issue date Nov 22, 2016
- Atmel Corporation
- Geeng-Chuan Chern
- G11 - INFORMATION STORAGE
Information Patent Grant
Selecting memory cells using source lines
- Patent number 9,142,306
- Issue date Sep 22, 2015
- Atmel Corporation
- Tsung-Ching Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated circuit including power diode
- Patent number 7,964,933
- Issue date Jun 21, 2011
- Diodes Inc.
- Paul Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit including power diode
- Patent number 7,250,668
- Issue date Jul 31, 2007
- Diodes, Inc.
- Paul Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming different oxide thickness for high voltage transi...
- Patent number 7,084,453
- Issue date Aug 1, 2006
- Silicon Storage Technology, Inc.
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile floating gate memory cell with floating gates formed a...
- Patent number 7,008,846
- Issue date Mar 7, 2006
- Silicon Storage Technology, Inc.
- Geeng-Chuan Chern
- G11 - INFORMATION STORAGE
Information Patent Grant
Power device having reduced reverse bias leakage current
- Patent number 6,979,861
- Issue date Dec 27, 2005
- APD Semiconductor, Inc.
- Vladimir Rodov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory array of floating gate memory cells with verti...
- Patent number 6,967,372
- Issue date Nov 22, 2005
- Silicon Storage Technology, Inc.
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating power rectifier device to vary operating para...
- Patent number 6,765,264
- Issue date Jul 20, 2004
- Advanced Power Devices
- Paul Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned method of forming a semiconductor memory array of floa...
- Patent number 6,750,090
- Issue date Jun 15, 2004
- Silicon Storage Technology, Inc.
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power diode having improved on resistance and breakdown voltage
- Patent number 6,743,703
- Issue date Jun 1, 2004
- APD Semiconductor, Inc.
- Vladimir Rodov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self aligned method of forming a semiconductor array of non-volatil...
- Patent number 6,706,592
- Issue date Mar 16, 2004
- Silicon Storage Technology, Inc.
- Geeng-Chuan Michael Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating power rectifier device having a laterally gra...
- Patent number 6,624,030
- Issue date Sep 23, 2003
- Advanced Power Devices, Inc.
- Paul Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory array of floating gate memory cells with float...
- Patent number 6,563,167
- Issue date May 13, 2003
- Silicon Storage Technology, Inc.
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH ESD PROTECTION STRUCTURE AND METHOD OF MA...
- Publication number 20240405015
- Publication date Dec 5, 2024
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED CAPACITOR, METHOD FOR MAKING THE SAME AND MEMORY DEVICE
- Publication number 20240306363
- Publication date Sep 12, 2024
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
Information Patent Application
SPLIT-GATE NON-VOLATILE MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20240276716
- Publication date Aug 15, 2024
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
1.5T OTP MEMORY DEVICE AND METHOD FOR FABRICATING SAME
- Publication number 20240179896
- Publication date May 30, 2024
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- G11 - INFORMATION STORAGE
Information Patent Application
OTP MEMORY DEVICE, METHOD FOR OPERATING SAME AND METHOD FOR FABRICA...
- Publication number 20240087660
- Publication date Mar 14, 2024
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY, FABRICATION AND CONTROL METHODS THEREOF
- Publication number 20240032291
- Publication date Jan 25, 2024
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT-GATE NON-VOLATILE MEMORY, FABRICATION AND CONTROL METHODS THE...
- Publication number 20240032290
- Publication date Jan 25, 2024
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ONE-TIME PROGRAMMABLE MEMORY UNIT CELL
- Publication number 20230413540
- Publication date Dec 21, 2023
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR MEMORY DEVICE WITH BURIED CAPA...
- Publication number 20220181328
- Publication date Jun 9, 2022
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ONE-TIME PROGRAMMABLE MEMORY DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20220181336
- Publication date Jun 9, 2022
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
1.5-TRANSISTOR (1.5T) ONE TIME PROGRAMMABLE (OTP) MEMORY WITH THIN...
- Publication number 20220059551
- Publication date Feb 24, 2022
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- G11 - INFORMATION STORAGE
Information Patent Application
STACKED CAPACITOR WITH HORIZONTAL AND VERTICAL FIN STRUCTURES AND M...
- Publication number 20220037332
- Publication date Feb 3, 2022
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING MAGNETIC MEMORY DEVICE
- Publication number 20220020918
- Publication date Jan 20, 2022
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- G11 - INFORMATION STORAGE
Information Patent Application
TRENCH CAPACITOR HAVING IMPROVED CAPACITANCE AND FABRICATION METHOD...
- Publication number 20220020844
- Publication date Jan 20, 2022
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A METAL-OXIDE-SEMICONDUCTOR TRANSISTOR
- Publication number 20210408017
- Publication date Dec 30, 2021
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Physically Unclonable Function Circuit Having Lower Gate-to-Source/...
- Publication number 20210358528
- Publication date Nov 18, 2021
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MOS TRANSISTOR HAVING LOWER GATE-TO-SOURCE/DRAIN BREAKDOWN VOLTAGE...
- Publication number 20210320110
- Publication date Oct 14, 2021
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE WITH SHALLOW BURIED CAPACITOR AND FABRI...
- Publication number 20210183867
- Publication date Jun 17, 2021
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE WITH BURIED CAPACITOR AND FIN-LIKE ELEC...
- Publication number 20210183868
- Publication date Jun 17, 2021
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE WITH MULTIPLE SIDEWALL SPACERS COVERING SIDE...
- Publication number 20210175412
- Publication date Jun 10, 2021
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20210167277
- Publication date Jun 3, 2021
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- G11 - INFORMATION STORAGE
Information Patent Application
TRENCH CAPACITOR HAVING IMPROVED CAPACITANCE AND FABRICATION METHOD...
- Publication number 20210098566
- Publication date Apr 1, 2021
- HeFeChip Corporation Limited
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE FLOATING GATE MEMORY CELLS
- Publication number 20160013310
- Publication date Jan 14, 2016
- ATMEL CORPORATION
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTING MEMORY CELLS
- Publication number 20160005477
- Publication date Jan 7, 2016
- ATMEL CORPORATION
- Tsung-Ching Wu
- G11 - INFORMATION STORAGE
Information Patent Application
SELECTING MEMORY CELLS
- Publication number 20140198571
- Publication date Jul 17, 2014
- Tsung-Ching Wu
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED CIRCUIT INCLUDING POWER DIODE
- Publication number 20110223729
- Publication date Sep 15, 2011
- DIODES, INCORPORATED
- Paul Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit including power diode
- Publication number 20070246794
- Publication date Oct 25, 2007
- Paul Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit including power diode
- Publication number 20060157815
- Publication date Jul 20, 2006
- APD Semiconductor, Inc.
- Paul Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile floating gate memory cell with floating gates formed a...
- Publication number 20040214393
- Publication date Oct 28, 2004
- Geeng-Chuan Chern
- G11 - INFORMATION STORAGE
Information Patent Application
Method of forming different oxide thickness for high voltage transi...
- Publication number 20040212007
- Publication date Oct 28, 2004
- Geeng-Chuan Chern
- H01 - BASIC ELECTRIC ELEMENTS

Geeng-Chuan Chern

Person

Patents Grantslast 30 patents

Trench capacitor having improved capacitance and fabrication method...

Method for fabricating semiconductor memory device with buried capa...

Method of fabricating magnetic memory device

Physically unclonable function circuit having lower gate-to-source/...

One-time programmable memory device and fabrication method thereof

Stacked capacitor with horizontal and vertical fin structures and m...

1.5-transistor (1.5T) one time programmable (OTP) memory with thin...

Semiconductor memory device with buried capacitor and fin-like elec...

Magnetic memory device with multiple sidewall spacers covering side...

Magnetic memory device and method for manufacturing the same

MOS transistor having lower gate-to-source/drain breakdown voltage...

Trench capacitor having improved capacitance and fabrication method...

Semiconductor memory device with shallow buried capacitor and fabri...

One time programmable (OTP) bits for physically unclonable functions

One-time programmable memory device and method for operating the same

Memory device and systems and methods for selecting memory cells in...

Non-volatile floating gate memory cells

Selecting memory cells using source lines

Integrated circuit including power diode

Integrated circuit including power diode

Method of forming different oxide thickness for high voltage transi...

Non-volatile floating gate memory cell with floating gates formed a...

Power device having reduced reverse bias leakage current

Semiconductor memory array of floating gate memory cells with verti...

Method of fabricating power rectifier device to vary operating para...

Self aligned method of forming a semiconductor memory array of floa...

Power diode having improved on resistance and breakdown voltage

Self aligned method of forming a semiconductor array of non-volatil...

Method of fabricating power rectifier device having a laterally gra...

Semiconductor memory array of floating gate memory cells with float...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH ESD PROTECTION STRUCTURE AND METHOD OF MA...

STACKED CAPACITOR, METHOD FOR MAKING THE SAME AND MEMORY DEVICE

SPLIT-GATE NON-VOLATILE MEMORY DEVICE AND FABRICATION METHOD THEREOF

1.5T OTP MEMORY DEVICE AND METHOD FOR FABRICATING SAME

OTP MEMORY DEVICE, METHOD FOR OPERATING SAME AND METHOD FOR FABRICA...

NON-VOLATILE MEMORY, FABRICATION AND CONTROL METHODS THEREOF

SPLIT-GATE NON-VOLATILE MEMORY, FABRICATION AND CONTROL METHODS THE...

ONE-TIME PROGRAMMABLE MEMORY UNIT CELL

METHOD FOR FABRICATING SEMICONDUCTOR MEMORY DEVICE WITH BURIED CAPA...

ONE-TIME PROGRAMMABLE MEMORY DEVICE AND FABRICATION METHOD THEREOF

1.5-TRANSISTOR (1.5T) ONE TIME PROGRAMMABLE (OTP) MEMORY WITH THIN...

STACKED CAPACITOR WITH HORIZONTAL AND VERTICAL FIN STRUCTURES AND M...

METHOD OF FABRICATING MAGNETIC MEMORY DEVICE

TRENCH CAPACITOR HAVING IMPROVED CAPACITANCE AND FABRICATION METHOD...

METHOD FOR FABRICATING A METAL-OXIDE-SEMICONDUCTOR TRANSISTOR

Physically Unclonable Function Circuit Having Lower Gate-to-Source/...

MOS TRANSISTOR HAVING LOWER GATE-TO-SOURCE/DRAIN BREAKDOWN VOLTAGE...

SEMICONDUCTOR MEMORY DEVICE WITH SHALLOW BURIED CAPACITOR AND FABRI...

SEMICONDUCTOR MEMORY DEVICE WITH BURIED CAPACITOR AND FIN-LIKE ELEC...

MAGNETIC MEMORY DEVICE WITH MULTIPLE SIDEWALL SPACERS COVERING SIDE...

MAGNETIC MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

TRENCH CAPACITOR HAVING IMPROVED CAPACITANCE AND FABRICATION METHOD...

NON-VOLATILE FLOATING GATE MEMORY CELLS

SELECTING MEMORY CELLS

SELECTING MEMORY CELLS

INTEGRATED CIRCUIT INCLUDING POWER DIODE

Integrated circuit including power diode

Integrated circuit including power diode

Non-volatile floating gate memory cell with floating gates formed a...

Method of forming different oxide thickness for high voltage transi...