Gen Sasaki

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Yokohama, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of selectively etching high impurity concentration semicondu...
- Patent number 4,554,046
- Issue date Nov 19, 1985
- Kabushiki Kaisha Toshiba
- Minoru Taguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 4,551,911
- Issue date Nov 12, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Gen Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device utilizing selective...
- Patent number 4,512,074
- Issue date Apr 23, 1985
- Tokyo Shibaura Denki Kabushiki Kaisha
- Gen Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating an I.sup.2 L element and a linear transistor...
- Patent number 4,404,738
- Issue date Sep 20, 1983
- Tokyo Shibaura Denki Kabushiki Kaisha
- Gen Sasaki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20070187776
- Publication date Aug 16, 2007
- Kabushiki Kaisha Toshiba
- Gen Sasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical bipolar transistor and method of manufacturing the same
- Publication number 20050184361
- Publication date Aug 25, 2005
- Kabushiki Kaisha Toshiba
- Gen Sasaki
- H01 - BASIC ELECTRIC ELEMENTS