Geng Wang

Person

Stormville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical field effect transistor including integrated antifuse
- Patent number 11,882,695
- Issue date Jan 23, 2024
- Samsung Electronics Co., Ltd.
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Inductor with ferromagnetic cores
- Patent number 11,398,347
- Issue date Jul 26, 2022
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor including integrated antifuse
- Patent number 11,139,307
- Issue date Oct 5, 2021
- Samsung Electronics Co., Ltd.
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Manufacturing method for inductor with ferromagnetic cores
- Patent number 11,037,725
- Issue date Jun 15, 2021
- International Business Machines Corporation
- Kangguo Cheng
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Anti-fuse with reduced programming voltage
- Patent number 10,886,284
- Issue date Jan 5, 2021
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal trench capacitor and improved isolation and methods of manufa...
- Patent number 10,818,668
- Issue date Oct 27, 2020
- International Business Machines Corporation
- Roger A. Booth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor including integrated antifuse
- Patent number 10,679,998
- Issue date Jun 9, 2020
- International Business Machines Corporation
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Vertical field effect transistor including integrated antifuse
- Patent number 10,680,000
- Issue date Jun 9, 2020
- International Business Machines Corporation
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated LDMOS and VFET transistors
- Patent number 10,615,159
- Issue date Apr 7, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable device compatible with vertical transistor flow
- Patent number 10,615,166
- Issue date Apr 7, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anti-fuse with reduced programming voltage
- Patent number 10,586,800
- Issue date Mar 10, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing inductor with ferromagnetic cores
- Patent number 10,553,354
- Issue date Feb 4, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density nanosheet diodes
- Patent number 10,504,890
- Issue date Dec 10, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical and optical via connections on a same chip
- Patent number 10,403,772
- Issue date Sep 3, 2019
- GLOBALFOUNDRIES Inc.
- Juntao Li
- G02 - OPTICS
Information Patent Grant
Nanosheet transistors having different gate dielectric thicknesses...
- Patent number 10,396,169
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded metal-insulator-metal (MIM) decoupling capacitor in monoli...
- Patent number 10,290,574
- Issue date May 14, 2019
- GLOBALFOUNDRIES Inc.
- Geng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming horizontal bipolar junction transistor compatible with nano...
- Patent number 10,269,790
- Issue date Apr 23, 2019
- International Business Machines Corporation
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Stacked nanosheet field effect transistor device with substrate iso...
- Patent number 10,249,709
- Issue date Apr 2, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistors having different gate dielectric thicknesses...
- Patent number 10,249,539
- Issue date Apr 2, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating standard-gate and extended-gate nanosheet transistors o...
- Patent number 10,243,054
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
IFinFET
- Patent number 10,236,381
- Issue date Mar 19, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple finFET formation with epitaxy separation
- Patent number 10,236,382
- Issue date Mar 19, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One-time programmable vertical field-effect transistor
- Patent number 10,229,920
- Issue date Mar 12, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor including integrated antifuse
- Patent number 10,229,919
- Issue date Mar 12, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anti-fuse with reduced programming voltage
- Patent number 10,224,334
- Issue date Mar 5, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming gates with varying length using sidewall image transfer
- Patent number 10,224,329
- Issue date Mar 5, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet capacitor
- Patent number 10,157,935
- Issue date Dec 18, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating thin and thick gate dielectric nanosheet transistors on...
- Patent number 10,141,403
- Issue date Nov 27, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Network copolymer crosslinked compositions and products comprising...
- Patent number 10,131,794
- Issue date Nov 20, 2018
- Momentive Performance Materials Inc.
- Ning Lu
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Integrated device with P-I-N diodes and vertical field effect trans...
- Patent number 10,090,293
- Issue date Oct 2, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR INCLUDING INTEGRATED ANTIFUSE
- Publication number 20210408016
- Publication date Dec 30, 2021
- Samsung Electronics Co., Ltd.
- Kangguo CHENG
- G11 - INFORMATION STORAGE
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR INCLUDING INTEGRATED ANTIFUSE
- Publication number 20200235109
- Publication date Jul 23, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTI-FUSE WITH REDUCED PROGRAMMING VOLTAGE
- Publication number 20200091161
- Publication date Mar 19, 2020
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROGRAMMABLE DEVICE COMPATIBLE WITH VERTICAL TRANSISTOR FLOW
- Publication number 20190189625
- Publication date Jun 20, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR INCLUDING INTEGRATED ANTIFUSE
- Publication number 20190123056
- Publication date Apr 25, 2019
- International Business Machines Corporation
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Application
INDUCTOR WITH FERROMAGNETIC CORES
- Publication number 20190019617
- Publication date Jan 17, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTI-FUSE WITH REDUCED PROGRAMMING VOLTAGE
- Publication number 20190019803
- Publication date Jan 17, 2019
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDUCTOR WITH FERROMAGNETIC CORES
- Publication number 20180374629
- Publication date Dec 27, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDUCTOR WITH FERROMAGNETIC CORES
- Publication number 20180261376
- Publication date Sep 13, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING HORIZONTAL BIPOLAR JUNCTION TRANSISTOR COMPATIBLE WITH NANO...
- Publication number 20180261593
- Publication date Sep 13, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED NANOSHEET FIELD EFFECT TRANSISTOR DEVICE WITH SUBSTRATE ISO...
- Publication number 20180219064
- Publication date Aug 2, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED METAL-INSULATOR-METAL (MIM) DECOUPLING CAPACITOR IN MONOLI...
- Publication number 20180204796
- Publication date Jul 19, 2018
- GLOBALFOUNDRIES INC.
- Geng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTORS HAVING DIFFERENT GATE DIELECTRIC THICKNESSES...
- Publication number 20180197785
- Publication date Jul 12, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTORS HAVING DIFFERENT GATE DIELECTRIC THICKNESSES...
- Publication number 20180197784
- Publication date Jul 12, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICAL AND OPTICAL VIA CONNECTIONS ON A SAME CHIP
- Publication number 20180158967
- Publication date Jun 7, 2018
- GLOBALFOUNDRIES INC.
- Juntao Li
- G02 - OPTICS
Information Patent Application
SPACER FORMATION IN VERTICAL FIELD EFFECT TRANSISTORS
- Publication number 20180158949
- Publication date Jun 7, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPACER FORMATION IN VERTICAL FIELD EFFECT TRANSISTORS
- Publication number 20180151727
- Publication date May 31, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING GATES WITH VARYING LENGTH USING SIDEWALL IMAGE TRANSFER
- Publication number 20180138175
- Publication date May 17, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY NANOSHEET DIODES
- Publication number 20180102359
- Publication date Apr 12, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTIPLE FINFET FORMATION WITH EPITAXY SEPARATION
- Publication number 20180096881
- Publication date Apr 5, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IFINFET
- Publication number 20180090605
- Publication date Mar 29, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED LDMOS AND VFET TRANSISTORS
- Publication number 20180090488
- Publication date Mar 29, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL TRENCH CAPACITOR AND IMPROVED ISOLATION AND METHODS OF MANUFA...
- Publication number 20180083009
- Publication date Mar 22, 2018
- International Business Machines Corporation
- Roger A. Booth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET CAPACITOR
- Publication number 20180083046
- Publication date Mar 22, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR INCLUDING INTEGRATED ANTIFUSE
- Publication number 20180061844
- Publication date Mar 1, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR INCLUDING INTEGRATED ANTIFUSE
- Publication number 20180061845
- Publication date Mar 1, 2018
- International Business Machines Corporation
- Kangguo Cheng
- G11 - INFORMATION STORAGE
Information Patent Application
INTEGRATED DEVICE WITH P-I-N DIODES AND VERTICAL FIELD EFFECT TRANS...
- Publication number 20180053758
- Publication date Feb 22, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL ANTIFUSE STRUCTURES
- Publication number 20180053767
- Publication date Feb 22, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTI-FUSE WITH REDUCED PROGRAMMING VOLTAGE
- Publication number 20180012897
- Publication date Jan 11, 2018
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANTI-FUSES WITH REDUCED PROGRAMMING VOLTAGES
- Publication number 20170373005
- Publication date Dec 28, 2017
- GLOBALFOUNDRIES INC.
- Chengwen Pei
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Vertical field effect transistor including integrated antifuse

Inductor with ferromagnetic cores

Vertical field effect transistor including integrated antifuse

Manufacturing method for inductor with ferromagnetic cores

Anti-fuse with reduced programming voltage

Metal trench capacitor and improved isolation and methods of manufa...

Vertical field effect transistor including integrated antifuse

Vertical field effect transistor including integrated antifuse

Integrated LDMOS and VFET transistors

Programmable device compatible with vertical transistor flow

Anti-fuse with reduced programming voltage

Method of manufacturing inductor with ferromagnetic cores

High density nanosheet diodes

Electrical and optical via connections on a same chip

Nanosheet transistors having different gate dielectric thicknesses...

Embedded metal-insulator-metal (MIM) decoupling capacitor in monoli...

Forming horizontal bipolar junction transistor compatible with nano...

Stacked nanosheet field effect transistor device with substrate iso...

Nanosheet transistors having different gate dielectric thicknesses...

Integrating standard-gate and extended-gate nanosheet transistors o...

IFinFET

Multiple finFET formation with epitaxy separation

One-time programmable vertical field-effect transistor

Vertical field effect transistor including integrated antifuse

Anti-fuse with reduced programming voltage

Forming gates with varying length using sidewall image transfer

Nanosheet capacitor

Integrating thin and thick gate dielectric nanosheet transistors on...

Network copolymer crosslinked compositions and products comprising...

Integrated device with P-I-N diodes and vertical field effect trans...

Patents Applicationslast 30 patents

VERTICAL FIELD EFFECT TRANSISTOR INCLUDING INTEGRATED ANTIFUSE

VERTICAL FIELD EFFECT TRANSISTOR INCLUDING INTEGRATED ANTIFUSE

ANTI-FUSE WITH REDUCED PROGRAMMING VOLTAGE

PROGRAMMABLE DEVICE COMPATIBLE WITH VERTICAL TRANSISTOR FLOW

VERTICAL FIELD EFFECT TRANSISTOR INCLUDING INTEGRATED ANTIFUSE

INDUCTOR WITH FERROMAGNETIC CORES

ANTI-FUSE WITH REDUCED PROGRAMMING VOLTAGE

INDUCTOR WITH FERROMAGNETIC CORES

INDUCTOR WITH FERROMAGNETIC CORES

FORMING HORIZONTAL BIPOLAR JUNCTION TRANSISTOR COMPATIBLE WITH NANO...

STACKED NANOSHEET FIELD EFFECT TRANSISTOR DEVICE WITH SUBSTRATE ISO...

EMBEDDED METAL-INSULATOR-METAL (MIM) DECOUPLING CAPACITOR IN MONOLI...

NANOSHEET TRANSISTORS HAVING DIFFERENT GATE DIELECTRIC THICKNESSES...

NANOSHEET TRANSISTORS HAVING DIFFERENT GATE DIELECTRIC THICKNESSES...

ELECTRICAL AND OPTICAL VIA CONNECTIONS ON A SAME CHIP

SPACER FORMATION IN VERTICAL FIELD EFFECT TRANSISTORS

SPACER FORMATION IN VERTICAL FIELD EFFECT TRANSISTORS

FORMING GATES WITH VARYING LENGTH USING SIDEWALL IMAGE TRANSFER

HIGH DENSITY NANOSHEET DIODES

MULTIPLE FINFET FORMATION WITH EPITAXY SEPARATION

IFINFET

INTEGRATED LDMOS AND VFET TRANSISTORS

METAL TRENCH CAPACITOR AND IMPROVED ISOLATION AND METHODS OF MANUFA...

NANOSHEET CAPACITOR

VERTICAL FIELD EFFECT TRANSISTOR INCLUDING INTEGRATED ANTIFUSE

VERTICAL FIELD EFFECT TRANSISTOR INCLUDING INTEGRATED ANTIFUSE

INTEGRATED DEVICE WITH P-I-N DIODES AND VERTICAL FIELD EFFECT TRANS...

VERTICAL ANTIFUSE STRUCTURES

ANTI-FUSE WITH REDUCED PROGRAMMING VOLTAGE

ANTI-FUSES WITH REDUCED PROGRAMMING VOLTAGES