Genyi Wang

Person

Jiangsu, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Field-stop reverse conducting insulated gate bipolar transistor and...
- Patent number 10,096,699
- Issue date Oct 9, 2018
- CSMC Technologies FAB1 Co., Ltd.
- Shuo Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor and manufacturing method therefor
- Patent number 10,084,036
- Issue date Sep 25, 2018
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Shengrong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor and manufacturing method therefor
- Patent number 9,954,074
- Issue date Apr 24, 2018
- CSMC Technologies FAB1 Co., Ltd.
- Shengrong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor and manufacturing method therefor
- Patent number 9,881,994
- Issue date Jan 30, 2018
- CSMC Technologies Fabl Co., Ltd.
- Shengrong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method for reverse conducting insulated gate bipolar...
- Patent number 9,673,193
- Issue date Jun 6, 2017
- CSMC Technologies FAB1 Co., Ltd.
- Shuo Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse conduction insulated gate bipolar transistor (IGBT) manufac...
- Patent number 9,666,682
- Issue date May 30, 2017
- CSMC Technologies FAB1 Co., Ltd.
- Wanli Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT manufacturing method
- Patent number 9,620,615
- Issue date Apr 11, 2017
- CSMC Technologies FAB1 Co., Ltd.
- Xiaoshe Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for removing polysilicon protection layer on a back face of...
- Patent number 9,607,851
- Issue date Mar 28, 2017
- CMSC TECHNOLOGIES FAB1 CO., LTD.
- Qiang Rui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT with built-in diode and manufacturing method therefor
- Patent number 9,595,520
- Issue date Mar 14, 2017
- CSMC Technologies Fab1 Co., Ltd.
- Xiaoshe Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing insulated gate bipolar transistor
- Patent number 9,590,029
- Issue date Mar 7, 2017
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Shengrong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing injection-enhanced insulated-gate bipolar...
- Patent number 9,583,587
- Issue date Feb 28, 2017
- CSMC Technologies Fabi Co., Ltd.
- Wanli Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing IGBT
- Patent number 9,553,164
- Issue date Jan 24, 2017
- CSMC Technologies Fab1 Co., Ltd.
- Xuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Preparation method for power diode
- Patent number 9,502,534
- Issue date Nov 22, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Shengrong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing power diode
- Patent number 9,502,497
- Issue date Nov 22, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Genyi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-stop reverse conducting insulated gate bipolar transistor and...
- Patent number 9,443,926
- Issue date Sep 13, 2016
- CSMC Technologies FAB1 Co., Ltd.
- Shuo Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing deep-trench super PN junctions
- Patent number 8,927,386
- Issue date Jan 6, 2015
- CSMC Technologies Fab1 Co., Ltd.
- Tzong Shiann Wu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREFOR
- Publication number 20180102406
- Publication date Apr 12, 2018
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Shengrong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20160380048
- Publication date Dec 29, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Shengrong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREFOR
- Publication number 20160380072
- Publication date Dec 29, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Shengrong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MANUFACTURING METHOD FOR REVERSE CONDUCTING INSULATED GATE BIPOLAR...
- Publication number 20160379974
- Publication date Dec 29, 2016
- CSMC Technologies FAB1 Co., Ltd.
- Shuo ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT MANUFACTURING METHOD
- Publication number 20160380071
- Publication date Dec 29, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Xiaoshe DENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE CONDUCTION INSULATED GATE BIPOLAR TRANSISTOR (IGBT) MANUFAC...
- Publication number 20160372571
- Publication date Dec 22, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Wanli Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING IGBT
- Publication number 20160372570
- Publication date Dec 22, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Xuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING INJECTION-ENHANCED INSULATED-GATE BIPOLAR...
- Publication number 20160372573
- Publication date Dec 22, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Wanli Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREPARATION METHOD FOR POWER DIODE
- Publication number 20160308029
- Publication date Oct 20, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Shengrong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREFOR
- Publication number 20160307995
- Publication date Oct 20, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Shengrong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PREPARING POWER DIODE
- Publication number 20160307994
- Publication date Oct 20, 2016
- CSMC Technologies Fab2 Co., Ltd.
- Genyi Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-STOP REVERSE CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR AND...
- Publication number 20160240608
- Publication date Aug 18, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Shuo Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT WITH BUILT-IN DIODE AND MANUFACTURING METHOD THEREFOR
- Publication number 20160240528
- Publication date Aug 18, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Xiaoshe Deng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD-STOP REVERSE CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR AND...
- Publication number 20160163841
- Publication date Jun 9, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Shuo Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR REMOVING A POLYSILICON PROTECTION LAYER ON A BACK FACE...
- Publication number 20150155182
- Publication date Jun 4, 2015
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Qiang Rui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING DEEP-TRENCH SUPER PN JUNCTIONS
- Publication number 20130196489
- Publication date Aug 1, 2013
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Tzong Shiann Wu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Field-stop reverse conducting insulated gate bipolar transistor and...

Insulated gate bipolar transistor and manufacturing method therefor

Insulated gate bipolar transistor and manufacturing method therefor

Insulated gate bipolar transistor and manufacturing method therefor

Manufacturing method for reverse conducting insulated gate bipolar...

Reverse conduction insulated gate bipolar transistor (IGBT) manufac...

IGBT manufacturing method

Method for removing polysilicon protection layer on a back face of...

IGBT with built-in diode and manufacturing method therefor

Method for manufacturing insulated gate bipolar transistor

Method for manufacturing injection-enhanced insulated-gate bipolar...

Method for manufacturing IGBT

Preparation method for power diode

Method for preparing power diode

Field-stop reverse conducting insulated gate bipolar transistor and...

Method for manufacturing deep-trench super PN junctions

Patents Applicationslast 30 patents

INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREFOR

METHOD FOR MANUFACTURING INSULATED GATE BIPOLAR TRANSISTOR

INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREFOR

MANUFACTURING METHOD FOR REVERSE CONDUCTING INSULATED GATE BIPOLAR...

IGBT MANUFACTURING METHOD

REVERSE CONDUCTION INSULATED GATE BIPOLAR TRANSISTOR (IGBT) MANUFAC...

METHOD FOR MANUFACTURING IGBT

METHOD FOR MANUFACTURING INJECTION-ENHANCED INSULATED-GATE BIPOLAR...

PREPARATION METHOD FOR POWER DIODE

INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREFOR

METHOD FOR PREPARING POWER DIODE

FIELD-STOP REVERSE CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR AND...

IGBT WITH BUILT-IN DIODE AND MANUFACTURING METHOD THEREFOR

FIELD-STOP REVERSE CONDUCTING INSULATED GATE BIPOLAR TRANSISTOR AND...

METHOD FOR REMOVING A POLYSILICON PROTECTION LAYER ON A BACK FACE...

METHOD FOR MANUFACTURING DEEP-TRENCH SUPER PN JUNCTIONS