Geoffrey Pourtois

Person

Villers-la-Ville, BE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor fin structure and method of fabricating the same
- Patent number 11,387,350
- Issue date Jul 12, 2022
- Imec VZW
- Geert Eneman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductors with increased carrier concentration
- Patent number 10,128,338
- Issue date Nov 13, 2018
- Imec VZW
- Hao Yu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Magnetic memory device having buffer layer
- Patent number 10,050,192
- Issue date Aug 14, 2018
- Imec VZW
- Johan Swerts
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for transfering a graphene layer
- Patent number 9,982,360
- Issue date May 29, 2018
- Imec VZW
- Cedric Huyghebaert
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Spin torque majority gate device
- Patent number 9,979,402
- Issue date May 22, 2018
- Imec VZW
- Adrien Vaysset
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Two-dimensional material semiconductor device
- Patent number 9,899,501
- Issue date Feb 20, 2018
- Imec VZW
- Geoffrey Pourtois
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterosection tunnel field-effect transistor (TFET)
- Patent number 9,608,094
- Issue date Mar 28, 2017
- Imec VZW
- Anne S. Verhulst
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing a III-V fin structure
- Patent number 9,431,519
- Issue date Aug 30, 2016
- Imec VZW
- Hideki Minari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin transfer torque magnetic memory device
- Patent number 9,281,040
- Issue date Mar 8, 2016
- IMEC
- Bart Soree
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for manufacturing an III-V engineered substrate and the III-...
- Patent number 8,232,581
- Issue date Jul 31, 2012
- IMEC
- Geoffrey Pourtois
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
CHALCOGEN-CONTAINING THRESHOLD SWITCH
- Publication number 20240188456
- Publication date Jun 6, 2024
- IMEC vzw
- Sergiu CLIMA
Information Patent Application
CHALCOGEN-CONTAINING THRESHOLD SWITCH
- Publication number 20240188457
- Publication date Jun 6, 2024
- IMEC vzw
- Sergiu CLIMA
Information Patent Application
MIXED METAL OXIDES
- Publication number 20230382758
- Publication date Nov 30, 2023
- IMEC vzw
- Michiel Jan Van Setten
- C01 - INORGANIC CHEMISTRY
Information Patent Application
MIXED METAL OXIDE INCLUDING MAGNESIUM AND ZINC
- Publication number 20230382756
- Publication date Nov 30, 2023
- IMEC vzw
- Michiel Jan Van Setten
- C01 - INORGANIC CHEMISTRY
Information Patent Application
Thermally Stable Spin Orbit Torque Layer for an MRAM Device
- Publication number 20230165159
- Publication date May 25, 2023
- IMEC vzw
- Jose Diogo Costa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MIXED METAL OXIDE
- Publication number 20230010899
- Publication date Jan 12, 2023
- IMEC vzw
- Michiel Jan van Setten
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SEMICONDUCTOR FIN STRUCTURE AND METHOD OF FABRICATING THE SAME
- Publication number 20200212205
- Publication date Jul 2, 2020
- IMEC vzw
- Geert Eneman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A MAGNETIC MEMORY DEVICE HAVING BUFFER LAYER
- Publication number 20190067564
- Publication date Feb 28, 2019
- IMEC vzw
- Johan Swerts
- G11 - INFORMATION STORAGE
Information Patent Application
Semiconductors With Increased Carrier Concentration
- Publication number 20180108734
- Publication date Apr 19, 2018
- IMEC vzw
- Hao Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN TORQUE MAJORITY GATE DEVICE
- Publication number 20170302280
- Publication date Oct 19, 2017
- IMEC vzw
- Adrien Vaysset
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-DIMENSIONAL MATERIAL SEMICONDUCTOR DEVICE
- Publication number 20170179263
- Publication date Jun 22, 2017
- IMEC vzw
- Geoffrey Pourtois
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY DEVICE HAVING BUFFER LAYER
- Publication number 20170170390
- Publication date Jun 15, 2017
- IMEC vzw
- Johan Swerts
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROSECTION TUNNEL FIELD-EFFECT TRANSISTOR (TFET)
- Publication number 20160064535
- Publication date Mar 3, 2016
- IMEC vzw
- Anne S. Verhulst
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Producing a III-V Fin Structure
- Publication number 20150340503
- Publication date Nov 26, 2015
- SONY CORPORATION
- Hideki Minari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR TRANSFERING A GRAPHENE LAYER
- Publication number 20150079399
- Publication date Mar 19, 2015
- IMEC vzw
- Cedric Huyghebaert
- B32 - LAYERED PRODUCTS
Information Patent Application
SPIN TRANSFER TORQUE MAGNETIC MEMORY DEVICE
- Publication number 20140160835
- Publication date Jun 12, 2014
- IMEC
- Bart Soree
- G11 - INFORMATION STORAGE
Information Patent Application
Method for Manufacturing an III-V Engineered Substrate and the III-...
- Publication number 20100327316
- Publication date Dec 30, 2010
- IMEC
- Geoffrey Pourtois
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL WORK FUNCTION DEVICE WITH STRESSOR LAYER AND METHOD FOR MANUFA...
- Publication number 20090174003
- Publication date Jul 9, 2009
- Interuniversitair Microelektronica Centrum vzw (IMEC)
- Shou-Zen Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Modulating the Effective Work Function
- Publication number 20070272967
- Publication date Nov 29, 2007
- Interuniversitair Microelektronica Centrum (IMEC)
- Luigi Pantisano
- H01 - BASIC ELECTRIC ELEMENTS

Geoffrey Pourtois

Person

Patents Grantslast 30 patents

Semiconductor fin structure and method of fabricating the same

Semiconductors with increased carrier concentration

Magnetic memory device having buffer layer

Method for transfering a graphene layer

Spin torque majority gate device

Two-dimensional material semiconductor device

Heterosection tunnel field-effect transistor (TFET)

Method of producing a III-V fin structure

Spin transfer torque magnetic memory device

Method for manufacturing an III-V engineered substrate and the III-...

Patents Applicationslast 30 patents

CHALCOGEN-CONTAINING THRESHOLD SWITCH

CHALCOGEN-CONTAINING THRESHOLD SWITCH

MIXED METAL OXIDES

MIXED METAL OXIDE INCLUDING MAGNESIUM AND ZINC

Thermally Stable Spin Orbit Torque Layer for an MRAM Device

MIXED METAL OXIDE

SEMICONDUCTOR FIN STRUCTURE AND METHOD OF FABRICATING THE SAME

METHOD OF MANUFACTURING A MAGNETIC MEMORY DEVICE HAVING BUFFER LAYER

Semiconductors With Increased Carrier Concentration

SPIN TORQUE MAJORITY GATE DEVICE

TWO-DIMENSIONAL MATERIAL SEMICONDUCTOR DEVICE

MAGNETIC MEMORY DEVICE HAVING BUFFER LAYER

HETEROSECTION TUNNEL FIELD-EFFECT TRANSISTOR (TFET)

Method of Producing a III-V Fin Structure

METHOD FOR TRANSFERING A GRAPHENE LAYER

SPIN TRANSFER TORQUE MAGNETIC MEMORY DEVICE

Method for Manufacturing an III-V Engineered Substrate and the III-...

DUAL WORK FUNCTION DEVICE WITH STRESSOR LAYER AND METHOD FOR MANUFA...

Method for Modulating the Effective Work Function