George D. Pettit

Person

Mahopac, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Submicron dimension compound semiconductor fabrication using therma...
- Patent number 4,920,069
- Issue date Apr 24, 1990
- International Business Machines Corporation
- Eric R. Fossum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor electro-optical conversion
- Patent number 4,860,066
- Issue date Aug 22, 1989
- International Business Machines Corporation
- Peter D. Kirchner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction interdigitated schottky barrier photodetector
- Patent number 4,807,006
- Issue date Feb 21, 1989
- International Business Machines Corporation
- Dennis L. Rogers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V semiconductor electrical contact
- Patent number 4,757,369
- Issue date Jul 12, 1988
- International Business Machines Corporation
- Thomas N. Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Intermediate passivation and cleaning of compound semiconductor sur...
- Patent number 4,597,825
- Issue date Jul 1, 1986
- International Business Machines Corporation
- John L. Freeouf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Intermetallic semiconductor ohmic contact
- Patent number 4,583,110
- Issue date Apr 15, 1986
- International Business Machines Corporation
- Thomas N. Jackson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon source component for use in molecular beam epitaxial growth...
- Patent number 4,550,047
- Issue date Oct 29, 1985
- International Business Machines Corporation
- Thomas N. Jackson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Volatile metal oxide suppression in molecular beam epitaxy systems
- Patent number 4,426,237
- Issue date Jan 17, 1984
- International Business Machines Corporation
- John L. Freeouf
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor ballistic transport device
- Patent number 4,366,493
- Issue date Dec 28, 1982
- International Business Machines Corporation
- Norman Braslau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Zinc-sulphide capping layer for gallium-arsenide device
- Patent number 4,354,198
- Issue date Oct 12, 1982
- International Business Machines Corporation
- Rodney T. Hodgson
- H01 - BASIC ELECTRIC ELEMENTS

George D. Pettit

Person

Patents Grantslast 30 patents

Submicron dimension compound semiconductor fabrication using therma...

Semiconductor electro-optical conversion

Heterojunction interdigitated schottky barrier photodetector

Group III-V semiconductor electrical contact

Intermediate passivation and cleaning of compound semiconductor sur...

Intermetallic semiconductor ohmic contact

Silicon source component for use in molecular beam epitaxial growth...

Volatile metal oxide suppression in molecular beam epitaxy systems

Semiconductor ballistic transport device

Zinc-sulphide capping layer for gallium-arsenide device