George Perlegos

Person

Santa Clara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Fault-tolerant memory array
- Patent number 4,768,169
- Issue date Aug 30, 1988
- Seeq Technology, Inc.
- George Perlegos
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Electrically-programmable and electrically-erasable MOS memory device
- Patent number 4,558,344
- Issue date Dec 10, 1985
- Seeq Technology, Inc.
- George Perlegos
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory cell fuse element
- Patent number 4,546,454
- Issue date Oct 8, 1985
- Seeq Technology, Inc.
- Anil Gupta
- G11 - INFORMATION STORAGE
Information Patent Grant
Enabling circuit for redundant word lines in a semiconductor memory...
- Patent number 4,538,245
- Issue date Aug 27, 1985
- Seeq Technology, Inc.
- George Smarandoiu
- G11 - INFORMATION STORAGE
Information Patent Grant
Sense amplifier for use with a semiconductor memory array
- Patent number 4,535,259
- Issue date Aug 13, 1985
- Seeq Technology, Inc.
- George Smarandoiu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of making EPROM cell with reduced programming voltage
- Patent number 4,519,849
- Issue date May 28, 1985
- Intel Corporation
- George J. Korsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical partitioning scheme for improving yields during the manu...
- Patent number 4,489,401
- Issue date Dec 18, 1984
- Seeq Technology, Inc.
- George Smarandoiu
- G11 - INFORMATION STORAGE
Information Patent Grant
EPROM Cell with reduced programming voltage and method of fabrication
- Patent number 4,412,310
- Issue date Oct 25, 1983
- Intel Corporation
- George J. Korsh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrically alterable read-mostly memory
- Patent number 4,266,283
- Issue date May 5, 1981
- Intel Corporation
- George Perlegos
- G11 - INFORMATION STORAGE
Information Patent Grant
MOS Static decoding circuit
- Patent number 4,264,828
- Issue date Apr 28, 1981
- Intel Corporation
- George Perlegos
- G11 - INFORMATION STORAGE
Information Patent Grant
Sensing amplifier for floating gate memory devices
- Patent number 4,223,394
- Issue date Sep 16, 1980
- Intel Corporation
- Saroj Pathak
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically programmable and erasable MOS floating gate memory dev...
- Patent number 4,203,158
- Issue date May 13, 1980
- Intel Corporation
- Dov Frohman-Bentchkowsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Floating gate storage device and method of fabrication
- Patent number 4,114,255
- Issue date Sep 19, 1978
- Intel Corporation
- Phillip J. Salsbury
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS Buffer circuit
- Patent number 4,103,189
- Issue date Jul 25, 1978
- Intel Corporation
- George Perlegos
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically programmable MOS read-only memory with isolated decoders
- Patent number 4,094,012
- Issue date Jun 6, 1978
- Intel Corporation
- George Perlegos
- G11 - INFORMATION STORAGE
Information Patent Grant
Erasable programmable read-only memory
- Patent number 3,938,108
- Issue date Feb 10, 1976
- Intel Corporation
- Phillip J. Salsbury
- G11 - INFORMATION STORAGE

George Perlegos

Person

Patents Grantslast 30 patents

Fault-tolerant memory array

Electrically-programmable and electrically-erasable MOS memory device

Non-volatile memory cell fuse element

Enabling circuit for redundant word lines in a semiconductor memory...

Sense amplifier for use with a semiconductor memory array

Method of making EPROM cell with reduced programming voltage

Electrical partitioning scheme for improving yields during the manu...

EPROM Cell with reduced programming voltage and method of fabrication

Electrically alterable read-mostly memory

MOS Static decoding circuit

Sensing amplifier for floating gate memory devices

Electrically programmable and erasable MOS floating gate memory dev...

Floating gate storage device and method of fabrication

MOS Buffer circuit

Electrically programmable MOS read-only memory with isolated decoders

Erasable programmable read-only memory