Gerald R. Dietze

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
In-situ post epitaxial treatment process
- Patent number 6,808,564
- Issue date Oct 26, 2004
- SEH America, Inc.
- Gerald R. Dietze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized silicon wafer gettering for advanced semiconductor devices
- Patent number 6,632,277
- Issue date Oct 14, 2003
- SEH America, Inc.
- Gerald R. Dietze
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Optimized silicon wafer strength for advanced semiconductor devices
- Patent number 6,565,651
- Issue date May 20, 2003
- SEH America, Inc.
- Gerald R. Dietze
- C30 - CRYSTAL GROWTH
Information Patent Grant
In-situ post epitaxial treatment process
- Patent number 6,562,128
- Issue date May 13, 2003
- SEH America, Inc.
- Gerald R. Dietze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of epitaxial semiconductor material with improved crystallog...
- Patent number 6,506,667
- Issue date Jan 14, 2003
- SEH America, Inc.
- Mark R. Boydston
- C30 - CRYSTAL GROWTH
Information Patent Grant
In-situ post epitaxial treatment process
- Patent number 6,471,771
- Issue date Oct 29, 2002
- SEH America, Inc.
- Gerald R. Dietze
- C30 - CRYSTAL GROWTH
Information Patent Grant
High efficiency silicon wafer optimized for advanced semiconductor...
- Patent number 6,454,852
- Issue date Sep 24, 2002
- SEH America, Inc.
- Gerald R. Dietze
- C30 - CRYSTAL GROWTH
Information Patent Grant
Purity silicon wafer for use in advanced semiconductor devices
- Patent number 6,395,085
- Issue date May 28, 2002
- SEH America, Inc.
- Gerald R. Dietze
- C30 - CRYSTAL GROWTH
Information Patent Grant
Susceptorless semiconductor wafer support and reactor system for ep...
- Patent number 6,375,749
- Issue date Apr 23, 2002
- SEH America, Inc.
- Mark R Boydston
- C30 - CRYSTAL GROWTH
Information Patent Grant
In-situ post epitaxial treatment process
- Patent number 6,338,756
- Issue date Jan 15, 2002
- SEH America, Inc.
- Gerald R. Dietze
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of determining the thickness of a layer on a silicon substrate
- Patent number 6,284,986
- Issue date Sep 4, 2001
- SEH America, Inc.
- Gerald R. Dietze
- G01 - MEASURING TESTING
Information Patent Grant
Growth of epitaxial semiconductor material with improved crystallog...
- Patent number 6,190,453
- Issue date Feb 20, 2001
- SEH America, Inc.
- Mark R. Boydston
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of processing the backside of a wafer within an epitaxial re...
- Patent number 6,184,154
- Issue date Feb 6, 2001
- SEH America, Inc.
- Gerald R. Dietze
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for increasing deposition quality of a chemica...
- Patent number 6,013,319
- Issue date Jan 11, 2000
- Gerald R. Dietze
- C30 - CRYSTAL GROWTH
Information Patent Grant
Exhaust insert for barrel-type epitaxial reactors
- Patent number 5,964,948
- Issue date Oct 12, 1999
- SEH America, Inc.
- Gerald Roger Dietze
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and apparatus for configuring an epitaxial reactor for reduc...
- Patent number 5,685,906
- Issue date Nov 11, 1997
- SEH America, Inc.
- Gerald R. Dietze
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
In-situ post epitaxial treatment process
- Publication number 20030159649
- Publication date Aug 28, 2003
- Gerald R. Dietze
- C30 - CRYSTAL GROWTH
Information Patent Application
IN-SITU POST EPITAXIAL TREATMENT PROCESS
- Publication number 20030097977
- Publication date May 29, 2003
- Gerald R. Dietze
- C30 - CRYSTAL GROWTH
Information Patent Application
In-situ post epitaxial treatment process
- Publication number 20030017716
- Publication date Jan 23, 2003
- Gerald R. Dietze
- C30 - CRYSTAL GROWTH
Information Patent Application
Wafer support device and reactor system for epitaxial layer growth
- Publication number 20020062792
- Publication date May 30, 2002
- SEH America, Inc.
- Mark R. Boydston
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
In-situ post epitaxial treatment process
- Publication number 20020059900
- Publication date May 23, 2002
- Gerald R. Dietze
- C30 - CRYSTAL GROWTH
Information Patent Application
Growth of epitaxial semiconductor material with improved crystallog...
- Publication number 20020025660
- Publication date Feb 28, 2002
- SEH America, Inc.
- Mark R. Boydston
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized silicon wafer strength for advanced semiconductor devices
- Publication number 20020020340
- Publication date Feb 21, 2002
- SEH America, Inc.
- Gerald R. Dietze
- C30 - CRYSTAL GROWTH
Information Patent Application
In-situ post epitaxial treatment process
- Publication number 20010027744
- Publication date Oct 11, 2001
- Gerald R. Dietze
- C30 - CRYSTAL GROWTH
Information Patent Application
Optimized silicon wafer gettering for advanced semiconductor devices
- Publication number 20010015168
- Publication date Aug 23, 2001
- Gerald R. Dietze
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
High efficiency silicon wafer optimized for advanced semiconductor...
- Publication number 20010007240
- Publication date Jul 12, 2001
- SEH America, Inc.
- Gerald R. Dietze
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Improved purity silicon wafer for use in advanced semiconductor dev...
- Publication number 20010007241
- Publication date Jul 12, 2001
- SEH America, Inc.
- Gerald R. Dietze
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Gerald R. Dietze

Person

Patents Grantslast 30 patents

In-situ post epitaxial treatment process

Optimized silicon wafer gettering for advanced semiconductor devices

Optimized silicon wafer strength for advanced semiconductor devices

In-situ post epitaxial treatment process

Growth of epitaxial semiconductor material with improved crystallog...

In-situ post epitaxial treatment process

High efficiency silicon wafer optimized for advanced semiconductor...

Purity silicon wafer for use in advanced semiconductor devices

Susceptorless semiconductor wafer support and reactor system for ep...

In-situ post epitaxial treatment process

Method of determining the thickness of a layer on a silicon substrate

Growth of epitaxial semiconductor material with improved crystallog...

Method of processing the backside of a wafer within an epitaxial re...

Method and apparatus for increasing deposition quality of a chemica...

Exhaust insert for barrel-type epitaxial reactors

Method and apparatus for configuring an epitaxial reactor for reduc...

Patents Applicationslast 30 patents

In-situ post epitaxial treatment process

IN-SITU POST EPITAXIAL TREATMENT PROCESS

In-situ post epitaxial treatment process

Wafer support device and reactor system for epitaxial layer growth

In-situ post epitaxial treatment process

Growth of epitaxial semiconductor material with improved crystallog...

Optimized silicon wafer strength for advanced semiconductor devices

In-situ post epitaxial treatment process

Optimized silicon wafer gettering for advanced semiconductor devices

High efficiency silicon wafer optimized for advanced semiconductor...

Improved purity silicon wafer for use in advanced semiconductor dev...