Gerardo A. Delgadino

Person

Milpitas, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Multi zone gas injection upper electrode system
- Patent number 11,594,400
- Issue date Feb 28, 2023
- Lam Research Corporation
- Ryan Bise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi zone gas injection upper electrode system
- Patent number 10,622,195
- Issue date Apr 14, 2020
- Lam Research Corporation
- Ryan Bise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric contact etch
- Patent number 10,134,600
- Issue date Nov 20, 2018
- Lam Research Corporation
- Leonid Romm
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer etching of silicon nitride
- Patent number 10,079,154
- Issue date Sep 18, 2018
- Lam Research Corporation
- Daniel Le
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydrogen activated atomic layer etching
- Patent number 9,779,956
- Issue date Oct 3, 2017
- Lam Research Corporation
- Xin Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gap spacer integration for improved fin device performance
- Patent number 9,515,156
- Issue date Dec 6, 2016
- Lam Research Corporation
- Paul Raymond Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated etch/clean for dielectric etch applications
- Patent number 9,396,961
- Issue date Jul 19, 2016
- Lam Research Corporation
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual zone temperature control of upper electrodes
- Patent number 9,263,240
- Issue date Feb 16, 2016
- Lam Research Corporation
- Alexei Marakhtanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of stripping organic mask with reduced damage to low-K film
- Patent number 9,040,430
- Issue date May 26, 2015
- Lam Research Corporation
- John M. Nagarah
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Triode reactor design with multiple radiofrequency powers
- Patent number 8,652,298
- Issue date Feb 18, 2014
- Lam Research Corporation
- Rajinder Dhindsa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bi-layer, tri-layer mask CD control
- Patent number 8,394,722
- Issue date Mar 12, 2013
- Lam Research Corporation
- Gerardo A. Delgadino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for low-K dielectric etch with reduced damage
- Patent number 8,236,188
- Issue date Aug 7, 2012
- Lam Research Corporation
- Bing Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Removal of process residues on the backside of a substrate
- Patent number 8,083,963
- Issue date Dec 27, 2011
- Applied Materials, Inc.
- Gerardo A. Delgadino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to avoid unstable plasma states during a process transition
- Patent number 8,048,806
- Issue date Nov 1, 2011
- Applied Materials, Inc.
- Michael C. Kutney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for etching a dielectric barrier layer with high selectivity
- Patent number 7,977,245
- Issue date Jul 12, 2011
- Applied Materials, Inc.
- Ying Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Organic BARC etch process capable of use in the formation of low K...
- Patent number 7,828,987
- Issue date Nov 9, 2010
- Applied Materials, Inc.
- Jens Karsten Schneider
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two step etching of a bottom anti-reflective coating layer in dual...
- Patent number 7,718,543
- Issue date May 18, 2010
- Applied Materials, Inc.
- Zhilin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a low-K dual damascene interconnect structure
- Patent number 7,435,685
- Issue date Oct 14, 2008
- Applied Materials, Inc.
- Gerardo A. Delgadino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma dielectric etch process including in-situ backside polymer r...
- Patent number 7,432,209
- Issue date Oct 7, 2008
- Applied Materials, Inc.
- Gerardo A. Delgadino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective etch process of a sacrificial light absorbing material (S...
- Patent number 7,309,448
- Issue date Dec 18, 2007
- Applied Materials, Inc.
- Hee Yeop Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective etch process of a sacrificial light absorbing material (S...
- Patent number 7,300,597
- Issue date Nov 27, 2007
- Applied Materials, Inc.
- Hee Yeop Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma dielectric etch process including ex-situ backside polymer r...
- Patent number 7,276,447
- Issue date Oct 2, 2007
- Applied Materials, Inc.
- Gerardo A. Delgadino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etch and photoresist strip process with intervening chamber...
- Patent number 7,244,313
- Issue date Jul 17, 2007
- Applied Materials, Inc.
- Yifeng Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a low-K dual damascene interconnect structure
- Patent number 7,132,369
- Issue date Nov 7, 2006
- Applied Materials, Inc.
- Gerardo A. Delgadino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for modifying dielectric characteristics of dielectric layers
- Patent number 6,921,727
- Issue date Jul 26, 2005
- Applied Materials, Inc.
- Kang-Lie Chiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitively coupled plasma reactor with uniform radial distributio...
- Patent number 6,900,596
- Issue date May 31, 2005
- Applied Materials, Inc.
- Jang Gyoo Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma reactor with spoke antenna having a VHF mode with the spokes...
- Patent number 6,667,577
- Issue date Dec 23, 2003
- Applied Materials, Inc.
- Steven Shannon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inductive antenna for a plasma reactor producing reduced fluorine d...
- Patent number 6,652,712
- Issue date Nov 25, 2003
- Applied Materials, Inc.
- Shiang-Bau Wang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MULTI ZONE GAS INJECTION UPPER ELECTRODE SYSTEM
- Publication number 20200243307
- Publication date Jul 30, 2020
- LAM RESEARCH CORPORATION
- Ryan Bise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER ETCHING OF SILICON NITRIDE
- Publication number 20180269071
- Publication date Sep 20, 2018
- LAM RESEARCH CORPORATION
- Daniel LE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC CONTACT ETCH
- Publication number 20180226260
- Publication date Aug 9, 2018
- LAM RESEARCH CORPORATION
- Leonid ROMM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED ETCH/CLEAN FOR DIELECTRIC ETCH APPLICATIONS
- Publication number 20160181117
- Publication date Jun 23, 2016
- LAM RESEARCH CORPORATION
- Reza Arghavani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR GAP SPACER INTEGRATION FOR IMPROVED FIN DEVICE PERFORMANCE
- Publication number 20160111515
- Publication date Apr 21, 2016
- LAM RESEARCH CORPORATION
- Paul Raymond Besser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF STRIPPING ORGANIC MASK WITH REDUCED DAMAGE TO LOW-K FILM
- Publication number 20150004797
- Publication date Jan 1, 2015
- LAM RESEARCH CORPORATION
- John M. NAGARAH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRIODE REACTOR DESIGN WITH MULTIPLE RADIOFREQUENCY POWERS
- Publication number 20130126475
- Publication date May 23, 2013
- LAM RESEARCH CORPORATION
- Rajinder Dhindsa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL ZONE TEMPERATURE CONTROL OF UPPER ELECTRODES
- Publication number 20130126476
- Publication date May 23, 2013
- LAM RESEARCH CORPORATION
- Alexei Marakhtanov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi Zone Gas Injection Upper Electrode System
- Publication number 20130126486
- Publication date May 23, 2013
- Ryan Bise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR LOW-K DIELECTRIC ETCH WITH REDUCED DAMAGE
- Publication number 20100261352
- Publication date Oct 14, 2010
- LAM RESEARCH CORPORATION
- Bing Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BI-LAYER, TRI-LAYER MASK CD CONTROL
- Publication number 20100108264
- Publication date May 6, 2010
- LAM RESEARCH CORPORATION
- Gerardo A. Delgadino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REMOVAL OF PROCESS RESIDUES ON THE BACKSIDE OF A SUBSTRATE
- Publication number 20080194111
- Publication date Aug 14, 2008
- APPLIED MATERIALS, INC.
- Gerardo A. Delgadino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A LOW-K DUAL DAMASCENE INTERCONNECT STRUCTURE
- Publication number 20080145998
- Publication date Jun 19, 2008
- Applied Materials, Inc.
- GERARDO A. DELGADINO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO STEP ETCHING OF A BOTTOM ANTI-REFLECTIVE COATING LAYER IN DUAL...
- Publication number 20080138997
- Publication date Jun 12, 2008
- APPLIED MATERIALS, INC.
- Zhilin Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIELECTRIC ETCH TOOL CONFIGURED FOR HIGH DENSITY AND LOW BOMBARDMEN...
- Publication number 20080023144
- Publication date Jan 31, 2008
- Gerardo A. Delgadino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA DIELECTRIC ETCH PROCESS INCLUDING EX-SITU BACKSIDE POLYMER R...
- Publication number 20070238305
- Publication date Oct 11, 2007
- APPLIED MATERIALS, INC.
- Gerardo A. Delgadino
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
METHODS FOR ETCHING A DIELECTRIC BARRIER LAYER WITH HIGH SELECTIVITY
- Publication number 20070224803
- Publication date Sep 27, 2007
- Ying Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR ETCHING A BOTTOM ANTI-REFLECTIVE COATING LAYER IN DUAL...
- Publication number 20070224825
- Publication date Sep 27, 2007
- Ying Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for etching a bottom anti-reflective coating layer in dual...
- Publication number 20070224827
- Publication date Sep 27, 2007
- Ying Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma dielectric etch process including in-situ backside polymer r...
- Publication number 20070224826
- Publication date Sep 27, 2007
- APPLIED MATERIALS, INC.
- Gerardo A. Delgadino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for etching a dielectric barrier layer with high selectivity
- Publication number 20070224807
- Publication date Sep 27, 2007
- APPLIED MATERIALS, INC.
- Ying Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods to avoid unstable plasma states during a process transition
- Publication number 20070066064
- Publication date Mar 22, 2007
- Applied Materials, Inc.
- Michael C. Kutney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to reduce plasma-induced charging damage
- Publication number 20070048882
- Publication date Mar 1, 2007
- APPLIED MATERIALS, INC.
- Michael C. Kutney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A DUAL DAMASCENE INTERCONNECT STRUCTURE
- Publication number 20070026665
- Publication date Feb 1, 2007
- Applied Materials, Inc.
- Kallol Bera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE ETCH PROCESS OF A SACRIFICIAL LIGHT ABSORBING MATERIAL (S...
- Publication number 20070020944
- Publication date Jan 25, 2007
- Applied Materials, Inc.
- Hee Yeop Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dielectric etch method with high source and low bombardment plasma...
- Publication number 20060118519
- Publication date Jun 8, 2006
- Applied Materials Inc.
- Gerardo A. Delgadino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Carbon-doped-Si oxide etch using H2 additive in fluorocarbon etch c...
- Publication number 20050266691
- Publication date Dec 1, 2005
- Applied Materials Inc.
- Binxi Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating a dual damascene interconnect structure
- Publication number 20050059234
- Publication date Mar 17, 2005
- APPLIED MATERIALS, INC.
- Kallol Bera
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective etch process of a sacrificial light absorbing material (S...
- Publication number 20050029229
- Publication date Feb 10, 2005
- APPLIED MATERIALS, INC.
- Hee Yeop Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for modifying dielectric characteristics of dielectric layers
- Publication number 20040180556
- Publication date Sep 16, 2004
- APPLIED MATERIALS, INC.
- Kang-Lie Chiang
- H01 - BASIC ELECTRIC ELEMENTS

Gerardo A. Delgadino

Person

Patents Grantslast 30 patents

Multi zone gas injection upper electrode system

Multi zone gas injection upper electrode system

Dielectric contact etch

Atomic layer etching of silicon nitride

Hydrogen activated atomic layer etching

Air gap spacer integration for improved fin device performance

Integrated etch/clean for dielectric etch applications

Dual zone temperature control of upper electrodes

Method of stripping organic mask with reduced damage to low-K film

Triode reactor design with multiple radiofrequency powers

Bi-layer, tri-layer mask CD control

Method for low-K dielectric etch with reduced damage

Removal of process residues on the backside of a substrate

Methods to avoid unstable plasma states during a process transition

Methods for etching a dielectric barrier layer with high selectivity

Organic BARC etch process capable of use in the formation of low K...

Two step etching of a bottom anti-reflective coating layer in dual...

Method of forming a low-K dual damascene interconnect structure

Plasma dielectric etch process including in-situ backside polymer r...

Selective etch process of a sacrificial light absorbing material (S...

Selective etch process of a sacrificial light absorbing material (S...

Plasma dielectric etch process including ex-situ backside polymer r...

Plasma etch and photoresist strip process with intervening chamber...

Method of forming a low-K dual damascene interconnect structure

Method for modifying dielectric characteristics of dielectric layers

Capacitively coupled plasma reactor with uniform radial distributio...

Plasma reactor with spoke antenna having a VHF mode with the spokes...

Inductive antenna for a plasma reactor producing reduced fluorine d...

Patents Applicationslast 30 patents

MULTI ZONE GAS INJECTION UPPER ELECTRODE SYSTEM

ATOMIC LAYER ETCHING OF SILICON NITRIDE

DIELECTRIC CONTACT ETCH

INTEGRATED ETCH/CLEAN FOR DIELECTRIC ETCH APPLICATIONS

AIR GAP SPACER INTEGRATION FOR IMPROVED FIN DEVICE PERFORMANCE

METHOD OF STRIPPING ORGANIC MASK WITH REDUCED DAMAGE TO LOW-K FILM

TRIODE REACTOR DESIGN WITH MULTIPLE RADIOFREQUENCY POWERS

DUAL ZONE TEMPERATURE CONTROL OF UPPER ELECTRODES

Multi Zone Gas Injection Upper Electrode System

METHOD FOR LOW-K DIELECTRIC ETCH WITH REDUCED DAMAGE

BI-LAYER, TRI-LAYER MASK CD CONTROL

REMOVAL OF PROCESS RESIDUES ON THE BACKSIDE OF A SUBSTRATE

METHOD OF FORMING A LOW-K DUAL DAMASCENE INTERCONNECT STRUCTURE

TWO STEP ETCHING OF A BOTTOM ANTI-REFLECTIVE COATING LAYER IN DUAL...

DIELECTRIC ETCH TOOL CONFIGURED FOR HIGH DENSITY AND LOW BOMBARDMEN...

PLASMA DIELECTRIC ETCH PROCESS INCLUDING EX-SITU BACKSIDE POLYMER R...

METHODS FOR ETCHING A DIELECTRIC BARRIER LAYER WITH HIGH SELECTIVITY

METHODS FOR ETCHING A BOTTOM ANTI-REFLECTIVE COATING LAYER IN DUAL...

Methods for etching a bottom anti-reflective coating layer in dual...

Plasma dielectric etch process including in-situ backside polymer r...

Methods for etching a dielectric barrier layer with high selectivity

Methods to avoid unstable plasma states during a process transition

Method to reduce plasma-induced charging damage

METHOD OF FABRICATING A DUAL DAMASCENE INTERCONNECT STRUCTURE

SELECTIVE ETCH PROCESS OF A SACRIFICIAL LIGHT ABSORBING MATERIAL (S...

Dielectric etch method with high source and low bombardment plasma...

Carbon-doped-Si oxide etch using H2 additive in fluorocarbon etch c...

Method of fabricating a dual damascene interconnect structure

Selective etch process of a sacrificial light absorbing material (S...

Method for modifying dielectric characteristics of dielectric layers