Glen D. Wilk

Person

New Providence, NJ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating a composite gate dielectric layer
- Patent number 7,253,063
- Issue date Aug 7, 2007
- Lucent Technologies Inc.
- David A Muller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating a semiconductor device having an insulating...
- Patent number 7,223,677
- Issue date May 29, 2007
- Agere Systems, INC
- Martin Michael Frank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High permittivity silicate gate dielectric
- Patent number 7,115,461
- Issue date Oct 3, 2006
- Texas Instruments Incorporated
- John Mark Anthony
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature method for forming a thin, uniform oxide
- Patent number 7,030,038
- Issue date Apr 18, 2006
- Texas Instruments Incorporated
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming metal oxide gate structures and capacitor electrodes
- Patent number 6,897,105
- Issue date May 24, 2005
- Texas Instrument Incorporated
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High permittivity silicate gate dielectric
- Patent number 6,841,439
- Issue date Jan 11, 2005
- Texas Instruments Incorporated
- John Mark Anthony
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device using an insulating layer having a seed layer
- Patent number 6,825,538
- Issue date Nov 30, 2004
- Agere Systems Inc.
- Martin Michael Frank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical vapor deposition of silicate high dielectric constant mate...
- Patent number 6,821,835
- Issue date Nov 23, 2004
- Texas Instruments Incorporated
- Glen D. Wilk
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Fabrication process for a semiconductor device having a metal oxide...
- Patent number 6,797,525
- Issue date Sep 28, 2004
- Agere Systems Inc.
- Martin L. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for semiconductor device fabrication in which a insulating...
- Patent number 6,770,536
- Issue date Aug 3, 2004
- Agere Systems Inc.
- Glen David Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form silicates as high dielectric constant materials
- Patent number 6,734,068
- Issue date May 11, 2004
- Texas Instruments Incorporated
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lower temperature method for forming high quality silicon-nitrogen...
- Patent number 6,730,977
- Issue date May 4, 2004
- Texas Instruments Incorporated
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a high-K gate dielectric and method of...
- Patent number 6,723,581
- Issue date Apr 20, 2004
- Agere Systems Inc.
- Yves Jean Chabal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lower temperature method for forming high quality silicon-nitrogen...
- Patent number 6,613,698
- Issue date Sep 2, 2003
- Texas Instruments Incorporated
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-hermetic packaging for lithium niobate-based devices
- Patent number 6,560,377
- Issue date May 6, 2003
- Agere Systems Inc.
- Christopher D. W. Jones
- G02 - OPTICS
Information Patent Grant
Hafnium nitride gate dielectric
- Patent number 6,552,388
- Issue date Apr 22, 2003
- Texas Instruments Incorporated
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chemical vapor deposition of silicate high dielectric constant mate...
- Patent number 6,544,875
- Issue date Apr 8, 2003
- Texas Instruments Incorporated
- Glen D. Wilk
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Ultrascaled MIS transistors fabricated using silicon-on-lattice-mat...
- Patent number 6,534,348
- Issue date Mar 18, 2003
- Texas Instruments Incorporated
- Theodore S. Moise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for evaluating semiconductor structures and de...
- Patent number 6,498,502
- Issue date Dec 24, 2002
- Texas Instrument Incorporated
- Henry L. Edwards
- G01 - MEASURING TESTING
Information Patent Grant
Method of fabricating a dielectric layer
- Patent number 6,495,474
- Issue date Dec 17, 2002
- Agere Systems Inc.
- Conor Stefan Rafferty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating a semiconductor device having a metal oxide...
- Patent number 6,479,404
- Issue date Nov 12, 2002
- Agere Systems Inc.
- Michael Steigerwald
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High charge storage density integrated circuit capacitor
- Patent number 6,468,856
- Issue date Oct 22, 2002
- Texas Instruments Incorporated
- Robert M. Wallace
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hafnium nitride gate dielectric
- Patent number 6,436,801
- Issue date Aug 20, 2002
- Texas Instruments Incorporated
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to produce ultrathin crystalline silicon nitride on Si (111...
- Patent number 6,420,729
- Issue date Jul 16, 2002
- Texas Instruments Incorporated
- Robert M. Wallace
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Zirconium and/or hafnium silicon-oxynitride gate dielectric
- Patent number 6,291,867
- Issue date Sep 18, 2001
- Texas Instruments Incorporated
- Robert M. Wallace
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to form silicates as high dielectric constant materials
- Patent number 6,291,283
- Issue date Sep 18, 2001
- Texas Instruments Incorporated
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Zirconium and/or hafnium oxynitride gate dielectric
- Patent number 6,291,866
- Issue date Sep 18, 2001
- Texas Instruments Incorporated
- Robert M. Wallace
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming dual metal gate structures or CMOS devices
- Patent number 6,291,282
- Issue date Sep 18, 2001
- Texas Instruments Incorporated
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to produce ultrathin crystalline silicon nitride on Si(111)...
- Patent number 6,277,681
- Issue date Aug 21, 2001
- Texas Instruments Incorporated
- Robert M. Wallace
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lower temperature method for forming high quality silicon-nitrogen...
- Patent number 6,274,510
- Issue date Aug 14, 2001
- Texas Instruments Incorporated
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
High permittivity silicate gate dielectric
- Publication number 20050112827
- Publication date May 26, 2005
- John Mark Anthony
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication process for a semiconductor device having a metal oxide...
- Publication number 20050042846
- Publication date Feb 24, 2005
- Martin L. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for semiconductor device fabrication in which a insulating...
- Publication number 20040241947
- Publication date Dec 2, 2004
- Agere Systems, Inc.
- Glen David Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for fabricating a semiconductor device having an insulating...
- Publication number 20040235313
- Publication date Nov 25, 2004
- Agere Systems, Inc.
- Martin Michael Frank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for fabricating a semiconductor device having an insulating...
- Publication number 20040099889
- Publication date May 27, 2004
- Agere Systems, Inc.
- Martin Michael Frank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for semiconductor device fabrication in which an insulating...
- Publication number 20040094809
- Publication date May 20, 2004
- Agere Systems, Inc.
- Martin Michael Frank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for semiconductor device fabrication in which a insulating...
- Publication number 20040067660
- Publication date Apr 8, 2004
- Agere Systems, Inc.
- Glen David Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Fabrication process for a semiconductor device having a metal oxide...
- Publication number 20030219972
- Publication date Nov 27, 2003
- Martin L. Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Chemical vapor deposition of silicate high dielectric constant mate...
- Publication number 20030215995
- Publication date Nov 20, 2003
- Glen D. Wilk
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Lower temperature method for forming high quality silicon-nitrogen...
- Publication number 20030207590
- Publication date Nov 6, 2003
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-HERMETIC PACKAGING FOR LITHIUM NIOBATE-BASED DEVICES
- Publication number 20030063830
- Publication date Apr 3, 2003
- Christopher D. W. Jones
- G02 - OPTICS
Information Patent Application
Composite gate dielectric layer
- Publication number 20030017715
- Publication date Jan 23, 2003
- David A. Muller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hafnium nitride gate dielectric
- Publication number 20020177293
- Publication date Nov 28, 2002
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite gate dielectric layer
- Publication number 20020102797
- Publication date Aug 1, 2002
- David A. Muller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus and method for evaluating semiconductor structures and de...
- Publication number 20020075017
- Publication date Jun 20, 2002
- Henry L. Edwards
- G01 - MEASURING TESTING
Information Patent Application
Method of forming metal oxide gate structures and capacitor electrodes
- Publication number 20010053593
- Publication date Dec 20, 2001
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High charge storage density integrated circuit capacitor
- Publication number 20010024853
- Publication date Sep 27, 2001
- Robert M. Wallace
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lower temperature method for forming high quality silicon-nitrogen...
- Publication number 20010023115
- Publication date Sep 20, 2001
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to form silicates as high dielectric constant materials
- Publication number 20010021589
- Publication date Sep 13, 2001
- Glen D. Wilk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process to produce ultrathin crystalline silicon nitride on Si (111...
- Publication number 20010002709
- Publication date Jun 7, 2001
- Robert M. Wallace
- H01 - BASIC ELECTRIC ELEMENTS

Glen D. Wilk

Person

Patents Grantslast 30 patents

Method of fabricating a composite gate dielectric layer

Process for fabricating a semiconductor device having an insulating...

High permittivity silicate gate dielectric

Low temperature method for forming a thin, uniform oxide

Method of forming metal oxide gate structures and capacitor electrodes

High permittivity silicate gate dielectric

Semiconductor device using an insulating layer having a seed layer

Chemical vapor deposition of silicate high dielectric constant mate...

Fabrication process for a semiconductor device having a metal oxide...

Process for semiconductor device fabrication in which a insulating...

Method to form silicates as high dielectric constant materials

Lower temperature method for forming high quality silicon-nitrogen...

Semiconductor device having a high-K gate dielectric and method of...

Lower temperature method for forming high quality silicon-nitrogen...

Non-hermetic packaging for lithium niobate-based devices

Hafnium nitride gate dielectric

Chemical vapor deposition of silicate high dielectric constant mate...

Ultrascaled MIS transistors fabricated using silicon-on-lattice-mat...

Apparatus and method for evaluating semiconductor structures and de...

Method of fabricating a dielectric layer

Process for fabricating a semiconductor device having a metal oxide...

High charge storage density integrated circuit capacitor

Hafnium nitride gate dielectric

Process to produce ultrathin crystalline silicon nitride on Si (111...

Zirconium and/or hafnium silicon-oxynitride gate dielectric

Method to form silicates as high dielectric constant materials

Zirconium and/or hafnium oxynitride gate dielectric

Method of forming dual metal gate structures or CMOS devices

Process to produce ultrathin crystalline silicon nitride on Si(111)...

Lower temperature method for forming high quality silicon-nitrogen...

Patents Applicationslast 30 patents

High permittivity silicate gate dielectric

Fabrication process for a semiconductor device having a metal oxide...

Process for semiconductor device fabrication in which a insulating...

Process for fabricating a semiconductor device having an insulating...

Process for fabricating a semiconductor device having an insulating...

Process for semiconductor device fabrication in which an insulating...

Process for semiconductor device fabrication in which a insulating...

Fabrication process for a semiconductor device having a metal oxide...

Chemical vapor deposition of silicate high dielectric constant mate...

Lower temperature method for forming high quality silicon-nitrogen...

NON-HERMETIC PACKAGING FOR LITHIUM NIOBATE-BASED DEVICES

Composite gate dielectric layer

Hafnium nitride gate dielectric

Composite gate dielectric layer

Apparatus and method for evaluating semiconductor structures and de...

Method of forming metal oxide gate structures and capacitor electrodes

High charge storage density integrated circuit capacitor

Lower temperature method for forming high quality silicon-nitrogen...

Method to form silicates as high dielectric constant materials

Process to produce ultrathin crystalline silicon nitride on Si (111...