Glyn Braithwaite

Person

Hooksett, NH, US

People

Patents Grantslast 30 patents

Information Patent Grant
RF circuits including transistors having strained material layers
- Patent number 7,906,776
- Issue date Mar 15, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Glyn Braithwaite
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Strained-semiconductor-on-insulator finFET device structures
- Patent number 7,109,516
- Issue date Sep 19, 2006
- AmberWave Systems Corporation
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming strained-semiconductor-on-insulator finFET devic...
- Patent number 7,074,623
- Issue date Jul 11, 2006
- AmberWave Systems Corporation
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF circuits including transistors having strained material layers
- Patent number 6,933,518
- Issue date Aug 23, 2005
- AmberWave Systems Corporation
- Glyn Braithwaite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Back-biasing to populate strained layer quantum wells
- Patent number 6,680,496
- Issue date Jan 20, 2004
- AmberWave Systems Corp.
- Richard Hammond
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
RF Circuits Including Transistors Having Strained Material Layers
- Publication number 20100264995
- Publication date Oct 21, 2010
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Glyn Braithwaite
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Double gate strained-semiconductor-on-insulator device structures
- Publication number 20060197124
- Publication date Sep 7, 2006
- AmberWave Systems Corporation
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for forming double gate strained-semiconductor-on-insulator...
- Publication number 20060197125
- Publication date Sep 7, 2006
- AmberWave Systems Corporation
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for forming structures including strained-semiconductor-on-...
- Publication number 20060197126
- Publication date Sep 7, 2006
- AmberWave Systems Corporation
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for forming strained-semiconductor-on-insulator bipolar dev...
- Publication number 20060197123
- Publication date Sep 7, 2006
- AmberWave Systems Corporation
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained-semiconductor-on-insulator bipolar device structures
- Publication number 20060186510
- Publication date Aug 24, 2006
- AmberWave Systems Corporation
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained-semiconductor-on-insulator finFET device structures
- Publication number 20050280103
- Publication date Dec 22, 2005
- AmberWave Systems Corporation
- Thomas A. Langdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF circuits including transistors having strained material layers
- Publication number 20050116219
- Publication date Jun 2, 2005
- AmberWave Systems Corporation
- Glyn Braithwaite
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Back-biasing to populate strained layer quantum wells
- Publication number 20040084668
- Publication date May 6, 2004
- AmberWave Systems Corporation
- Richard Hammond
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained-semiconductor-on-insulator device structures
- Publication number 20040031979
- Publication date Feb 19, 2004
- AmberWave Systems Corporation
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACK-BIASING TO POPULATE STRAINED LAYER QUANTUM WELLS
- Publication number 20040004230
- Publication date Jan 8, 2004
- AmberWave Systems Corporation
- Richard Hammond
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF circuits including transistors having strained material layers
- Publication number 20030102498
- Publication date Jun 5, 2003
- Glyn Braithwaite
- H03 - BASIC ELECTRONIC CIRCUITRY

Glyn Braithwaite

Person

Patents Grantslast 30 patents

RF circuits including transistors having strained material layers

Strained-semiconductor-on-insulator finFET device structures

Methods of forming strained-semiconductor-on-insulator finFET devic...

RF circuits including transistors having strained material layers

Back-biasing to populate strained layer quantum wells

Patents Applicationslast 30 patents

RF Circuits Including Transistors Having Strained Material Layers

Double gate strained-semiconductor-on-insulator device structures

Methods for forming double gate strained-semiconductor-on-insulator...

Methods for forming structures including strained-semiconductor-on-...

Methods for forming strained-semiconductor-on-insulator bipolar dev...

Strained-semiconductor-on-insulator bipolar device structures

Strained-semiconductor-on-insulator finFET device structures

RF circuits including transistors having strained material layers

Back-biasing to populate strained layer quantum wells

Strained-semiconductor-on-insulator device structures

BACK-BIASING TO POPULATE STRAINED LAYER QUANTUM WELLS

RF circuits including transistors having strained material layers