Glyn Braithwaite

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Lattice-mismatched semiconductor structures with reduced dislocatio...
- Patent number 9,431,243
- Issue date Aug 30, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lattice-mismatched semiconductor structures with reduced dislocatio...
- Patent number 9,219,112
- Issue date Dec 22, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Lattice-mismatched semiconductor structures with reduced dislocatio...
- Patent number 8,987,028
- Issue date Mar 24, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RF circuits including transistors having strained material layers
- Patent number 8,809,835
- Issue date Aug 19, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Glyn Braithwaite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lattice-mismatched semiconductor structures with reduced dislocatio...
- Patent number 8,796,734
- Issue date Aug 5, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Partial poly amorphization for channeling prevention
- Patent number 8,704,229
- Issue date Apr 22, 2014
- GLOBALFOUNDRIES Inc.
- Peter Javorka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lattice-mismatched semiconductor structures with reduced dislocatio...
- Patent number 8,629,477
- Issue date Jan 14, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Lattice-mismatched semiconductor structures with reduced dislocatio...
- Patent number 8,519,436
- Issue date Aug 27, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Lattice-mismatched semiconductor structures with reduced dislocatio...
- Patent number 8,324,660
- Issue date Dec 4, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
RF circuits including transistors having strained material layers
- Patent number 8,247,798
- Issue date Aug 21, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Glyn Braithwaite
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
LATTICE-MISMATCHED SEMICONDUCTOR STRUCTURES WITH REDUCED DISLOCATIO...
- Publication number 20160111285
- Publication date Apr 21, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...
- Publication number 20150200246
- Publication date Jul 16, 2015
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...
- Publication number 20140374798
- Publication date Dec 25, 2014
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL POLY AMORPHIZATION FOR CHANNELING PREVENTION
- Publication number 20140167110
- Publication date Jun 19, 2014
- GLOBAL FOUNDRIES Inc.
- Peter JAVORKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...
- Publication number 20140106546
- Publication date Apr 17, 2014
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...
- Publication number 20130285116
- Publication date Oct 31, 2013
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...
- Publication number 20130105860
- Publication date May 2, 2013
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Anthony J. Lochtefeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL POLY AMORPHIZATION FOR CHANNELING PREVENTION
- Publication number 20130026582
- Publication date Jan 31, 2013
- GLOBALFOUNDRIES INC.
- Peter Javorka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RF Circuits Including Transistors Having Strained Material Layers
- Publication number 20120299120
- Publication date Nov 29, 2012
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Glyn Braithwaite
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
RF Circuits Including Transistors Having Strained Material Layers
- Publication number 20110121362
- Publication date May 26, 2011
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Glyn Braithwaite
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...
- Publication number 20110049568
- Publication date Mar 3, 2011
- Anthony J. Lochtefeld
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

Glyn Braithwaite

Person

Patents Grantslast 30 patents

Lattice-mismatched semiconductor structures with reduced dislocatio...

Lattice-mismatched semiconductor structures with reduced dislocatio...

Lattice-mismatched semiconductor structures with reduced dislocatio...

RF circuits including transistors having strained material layers

Lattice-mismatched semiconductor structures with reduced dislocatio...

Partial poly amorphization for channeling prevention

Lattice-mismatched semiconductor structures with reduced dislocatio...

Lattice-mismatched semiconductor structures with reduced dislocatio...

Lattice-mismatched semiconductor structures with reduced dislocatio...

RF circuits including transistors having strained material layers

Patents Applicationslast 30 patents

LATTICE-MISMATCHED SEMICONDUCTOR STRUCTURES WITH REDUCED DISLOCATIO...

Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...

Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...

PARTIAL POLY AMORPHIZATION FOR CHANNELING PREVENTION

Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...

Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...

Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...

PARTIAL POLY AMORPHIZATION FOR CHANNELING PREVENTION

RF Circuits Including Transistors Having Strained Material Layers

RF Circuits Including Transistors Having Strained Material Layers

Lattice-Mismatched Semiconductor Structures with Reduced Dislocatio...