Gordon K. Madson

Person

Salt Lake City, UT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods related to power semiconductor devices with thick bottom ox...
- Patent number 8,936,985
- Issue date Jan 20, 2015
- Fairchild Semiconductor Corporation
- Ashok Challa
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Method and structure for shielded gate trench FET
- Patent number 8,497,549
- Issue date Jul 30, 2013
- Fairchild Semiconductor Corporation
- Gordon K. Madson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of making power semiconductor devices with thick bottom oxi...
- Patent number 8,143,124
- Issue date Mar 27, 2012
- Fairchild Semiconductor Corporation
- Ashok Challa
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Structure and method for forming a minimum pitch trench-gate FET wi...
- Patent number 7,553,740
- Issue date Jun 30, 2009
- Fairchild Semiconductor Corporation
- Joelle Sharp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hydrogen anneal for creating an enhanced trench for trench MOSFETS
- Patent number 6,825,087
- Issue date Nov 30, 2004
- Fairchild Semiconductor Corporation
- Joelle Sharp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a trench MOSFET using selective growth epitaxy
- Patent number 6,635,534
- Issue date Oct 21, 2003
- Fairchild Semiconductor Corporation
- Gordon K. Madson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET formed using selective epitaxial growth
- Patent number 6,576,954
- Issue date Jun 10, 2003
- Fairchild Semiconductor Corporation
- Gordon K. Madson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a trench MOSFET using selective growth epitaxy
- Patent number 6,391,699
- Issue date May 21, 2002
- Fairchild Semiconductor Corporation
- Gordon K. Madson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of increasing trench density for semiconductor
- Patent number 6,291,310
- Issue date Sep 18, 2001
- Fairfield Semiconductor Corporation
- Gordon K. Madson
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS OF MAKING POWER SEMICONDUCTOR DEVICES WITH THICK BOTTOM OXI...
- Publication number 20120220091
- Publication date Aug 30, 2012
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
METHODS FOR MAKING SEMICONDUCTOR DEVICES USING NITRIDE CONSUMPTION...
- Publication number 20100187602
- Publication date Jul 29, 2010
- Debra S. Woolsey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Structure for Shielded Gate Trench FET
- Publication number 20090050959
- Publication date Feb 26, 2009
- Gordon K. Madson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Hydrogen Anneal and Gate Oxidation for Improved Gate Oxi...
- Publication number 20080199995
- Publication date Aug 21, 2008
- Debra Susan Woolsey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trenched Shield Gate Power Semiconductor Devices and Methods of Man...
- Publication number 20080150020
- Publication date Jun 26, 2008
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Methods of Making Power Semiconductor Devices with Thick Bottom Oxi...
- Publication number 20080138953
- Publication date Jun 12, 2008
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Power Semiconductor Devices Having Termination Structures and Metho...
- Publication number 20080135931
- Publication date Jun 12, 2008
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Structure and method for forming a minimum pitch trench-gate FET wi...
- Publication number 20060267088
- Publication date Nov 30, 2006
- Joelle Sharp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor devices and methods of manufacture
- Publication number 20060214221
- Publication date Sep 28, 2006
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Power semiconductor devices and methods of manufacture
- Publication number 20060214222
- Publication date Sep 28, 2006
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Power semiconductor devices and methods of manufacture
- Publication number 20050167742
- Publication date Aug 4, 2005
- Fairchild Semiconductor Corp.
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Trench MOSFET formed using selective epitaxial growth
- Publication number 20020102786
- Publication date Aug 1, 2002
- Fairchild Semiconductor Corporation
- Gordon K. Madson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a trench mosfet using selective growth epitaxy
- Publication number 20010049167
- Publication date Dec 6, 2001
- Gordon K. Madson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH SEIMCONDUCTOR DEVICES REDUCED TRENCH PITCH
- Publication number 20010034109
- Publication date Oct 25, 2001
- Gordon K. Madson
- H01 - BASIC ELECTRIC ELEMENTS

Gordon K. Madson

Person

Patents Grantslast 30 patents

Methods related to power semiconductor devices with thick bottom ox...

Method and structure for shielded gate trench FET

Methods of making power semiconductor devices with thick bottom oxi...

Structure and method for forming a minimum pitch trench-gate FET wi...

Hydrogen anneal for creating an enhanced trench for trench MOSFETS

Method of manufacturing a trench MOSFET using selective growth epitaxy

Trench MOSFET formed using selective epitaxial growth

Method of manufacturing a trench MOSFET using selective growth epitaxy

Method of increasing trench density for semiconductor

Patents Applicationslast 30 patents

METHODS OF MAKING POWER SEMICONDUCTOR DEVICES WITH THICK BOTTOM OXI...

METHODS FOR MAKING SEMICONDUCTOR DEVICES USING NITRIDE CONSUMPTION...

Method and Structure for Shielded Gate Trench FET

Integrated Hydrogen Anneal and Gate Oxidation for Improved Gate Oxi...

Trenched Shield Gate Power Semiconductor Devices and Methods of Man...

Methods of Making Power Semiconductor Devices with Thick Bottom Oxi...

Power Semiconductor Devices Having Termination Structures and Metho...

Structure and method for forming a minimum pitch trench-gate FET wi...

Power semiconductor devices and methods of manufacture

Power semiconductor devices and methods of manufacture

Power semiconductor devices and methods of manufacture

Trench MOSFET formed using selective epitaxial growth

Method of manufacturing a trench mosfet using selective growth epitaxy

TRENCH SEIMCONDUCTOR DEVICES REDUCED TRENCH PITCH