Gregory G. Freeman

Person

Wappinger Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device having diffusion barrier to reduce back channe...
- Patent number 9,406,569
- Issue date Aug 2, 2016
- GLOBALFOUNDRIES Inc.
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress-generating structure for semiconductor-on-insulator devices
- Patent number 9,305,999
- Issue date Apr 5, 2016
- GLOBALFOUNDRIES Inc.
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Faceted intrinsic epitaxial buffer layer for reducing short channel...
- Patent number 9,287,399
- Issue date Mar 15, 2016
- International Business Machines Corporation
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having diffusion barrier to reduce back channe...
- Patent number 9,240,354
- Issue date Jan 19, 2016
- GLOBALFOUNDRIES Inc.
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Faceted intrinsic epitaxial buffer layer for reducing short channel...
- Patent number 8,940,595
- Issue date Jan 27, 2015
- International Business Machines Corporation
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress-generating structure for semiconductor-on-insulator devices
- Patent number 8,629,501
- Issue date Jan 14, 2014
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gated diode structure and method including relaxed liner
- Patent number 8,232,603
- Issue date Jul 31, 2012
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator structures including a trench containing...
- Patent number 8,115,254
- Issue date Feb 14, 2012
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of creating asymmetric field-effect-transistors
- Patent number 8,017,483
- Issue date Sep 13, 2011
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance schottky-barrier-source asymmetric MOSFETs
- Patent number 7,863,143
- Issue date Jan 4, 2011
- International Business Machines Corporation
- Qingqing Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming high performance gates and structures thereof
- Patent number 7,790,553
- Issue date Sep 7, 2010
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a resistor and an FET from the metal portion of a...
- Patent number 7,749,822
- Issue date Jul 6, 2010
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Creating increased mobility in a bipolar device
- Patent number 7,741,186
- Issue date Jun 22, 2010
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tuneable semiconductor device with discontinuous portions in the su...
- Patent number 7,709,930
- Issue date May 4, 2010
- International Business Machines Corporation
- Andreas Stricker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating self-aligned bipolar transistor having tapere...
- Patent number 7,615,457
- Issue date Nov 10, 2009
- International Business Machines Corporation
- Hiroyuki Akatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with isolation and direct contacts
- Patent number 7,611,953
- Issue date Nov 3, 2009
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor self-alignment with raised extrinsic base extens...
- Patent number 7,611,954
- Issue date Nov 3, 2009
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to improve the SiGe heterojunction bipolar device performance
- Patent number 7,476,914
- Issue date Jan 13, 2009
- International Business Machines Corporation
- Omer H. Dokumaci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor having self-aligned silicide and a self-aligned...
- Patent number 7,466,010
- Issue date Dec 16, 2008
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with collector having an epitaxial Si:C region
- Patent number 7,442,595
- Issue date Oct 28, 2008
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of self-aligned bipolar transistor having tape...
- Patent number 7,425,754
- Issue date Sep 16, 2008
- International Business Machines Corporation
- Hiroyuki Akatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having an asymmetrically stressed channel r...
- Patent number 7,355,221
- Issue date Apr 8, 2008
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar structure with two base-emitter junctions in the same circuit
- Patent number 7,348,250
- Issue date Mar 25, 2008
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Creating increased mobility in a bipolar device
- Patent number 7,329,941
- Issue date Feb 12, 2008
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned mask formed utilizing differential oxidation rates of...
- Patent number 7,288,827
- Issue date Oct 30, 2007
- International Business Machines Corporation
- Huajie Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with isolation and direct contacts
- Patent number 7,217,988
- Issue date May 15, 2007
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with a very narrow emitter feature
- Patent number 7,180,157
- Issue date Feb 20, 2007
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with collector having an epitaxial Si:C region
- Patent number 7,170,083
- Issue date Jan 30, 2007
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to improve the SiGe heterojunction bipolar device performance
- Patent number 7,144,787
- Issue date Dec 5, 2006
- International Business Machines Corporation
- Omer H. Dokumaci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with extrinsic stress layer
- Patent number 7,102,205
- Issue date Sep 5, 2006
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL...
- Publication number 20150084096
- Publication date Mar 26, 2015
- International Business Machines Corporation
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DIFFUSION BARRIER TO REDUCE BACK CHANNE...
- Publication number 20150056760
- Publication date Feb 26, 2015
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL...
- Publication number 20140264558
- Publication date Sep 18, 2014
- International Business Machines Corporation
- Bhupesh Chandra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING DIFFUSION BARRIER TO REDUCE BACK CHANNE...
- Publication number 20140131782
- Publication date May 15, 2014
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS-GENERATING STRUCTURE FOR SEMICONDUCTOR-ON-INSULATOR DEVICES
- Publication number 20130168804
- Publication date Jul 4, 2013
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS-GENERATING STRUCTURE FOR SEMICONDUCTOR-ON-INSULATOR DEVICES
- Publication number 20120139081
- Publication date Jun 7, 2012
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF CREATING ASYMMETRIC FIELD-EFFECT-TRANSISTORS
- Publication number 20100330763
- Publication date Dec 30, 2010
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gated Diode Structure and Method Including Relaxed Liner
- Publication number 20100237421
- Publication date Sep 23, 2010
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING HIGH PERFORMANCE GATES AND STRUCTURES THEREOF
- Publication number 20100006926
- Publication date Jan 14, 2010
- International Business Machines Corporation
- HUILONG ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH PERFORMANCE SCHOTTKY-BARRIER-SOURCE ASYMMETRIC MOSFETS
- Publication number 20090273040
- Publication date Nov 5, 2009
- International Business Machines Corporation
- Qingqing Liang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTOR AND FET FORMED FROM THE METAL PORTION OF A MOSFET METAL GA...
- Publication number 20090090977
- Publication date Apr 9, 2009
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS-GENERATING STRUCTURE FOR SEMICONDUCTOR-ON-INSULATOR DEVICES
- Publication number 20090079026
- Publication date Mar 26, 2009
- International Business Machines Corporation
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM CELLS WITH ASYMMETRIC FLOATING-BODY PASS-GATE TRANSISTORS
- Publication number 20090073758
- Publication date Mar 19, 2009
- International Business Machines Corporation
- Gregory G. Freeman
- G11 - INFORMATION STORAGE
Information Patent Application
Method of fabricating self-aligned bipolar transistor having tapere...
- Publication number 20080318373
- Publication date Dec 25, 2008
- International Business Machines Corporation
- Hiroyuki Akatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS TO IMPROVE THE SiGe HETEROJUNCTION BIPOLAR DEVICE PERFORMANCE
- Publication number 20080128861
- Publication date Jun 5, 2008
- International Business Machines Corporation
- Omer H. Dokumaci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CREATING INCREASED MOBILITY IN A BIPOLAR DEVICE
- Publication number 20080067631
- Publication date Mar 20, 2008
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNEABLE SEMICONDUCTOR DEVICE
- Publication number 20070215978
- Publication date Sep 20, 2007
- International Business Machines Corporation
- Andreas Stricker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH ISOLATION AND DIRECT CONTACTS
- Publication number 20070145533
- Publication date Jun 28, 2007
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistor with collector having an epitaxial Si:C region
- Publication number 20060289852
- Publication date Dec 28, 2006
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF MAKING A FIELD EFFECT TRANSISTOR HAVING AN...
- Publication number 20060255415
- Publication date Nov 16, 2006
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS TO IMPROVE THE SIGE HETEROJUNCTION BIPOLAR DEVICE PERFORMANCE
- Publication number 20060252216
- Publication date Nov 9, 2006
- International Business Machines Corporation
- Omer H. Dokumaci
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH COLLECTOR HAVING AN EPITAXIAL Si:C REGION
- Publication number 20060154476
- Publication date Jul 13, 2006
- International Business Machines Corporation
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistor with extrinsic stress layer
- Publication number 20060043529
- Publication date Mar 2, 2006
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CREATING INCREASED MOBILITY IN A BIPOLAR DEVICE
- Publication number 20060019458
- Publication date Jan 26, 2006
- International Business Machines Corporation
- Dureseti Chidambarrao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR TRANSISTOR WITH ISOLATION AND DIRECT CONTACTS
- Publication number 20050269664
- Publication date Dec 8, 2005
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistor having self-aligned silicide and a self-aligned...
- Publication number 20050242373
- Publication date Nov 3, 2005
- International Business Machines Corporation
- David C. Ahlgren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar transistor self-alignment with raised extrinsic base extens...
- Publication number 20050233535
- Publication date Oct 20, 2005
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF FORMING A BIPOLAR TRANSISTOR HAVING A VOID...
- Publication number 20050199907
- Publication date Sep 15, 2005
- International Business Machines Corporation
- Rama Divakaruni
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF SELF-ALIGNED BIPOLAR TRANSISTOR HAVING TAPE...
- Publication number 20050184359
- Publication date Aug 25, 2005
- International Business Machines Corporation
- Hiroyuki Akatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bipolar structure with two base-emitter junctions in the same circuit
- Publication number 20050145990
- Publication date Jul 7, 2005
- Gregory G. Freeman
- H01 - BASIC ELECTRIC ELEMENTS

Gregory G. Freeman

Person

Patents Grantslast 30 patents

Semiconductor device having diffusion barrier to reduce back channe...

Stress-generating structure for semiconductor-on-insulator devices

Faceted intrinsic epitaxial buffer layer for reducing short channel...

Semiconductor device having diffusion barrier to reduce back channe...

Faceted intrinsic epitaxial buffer layer for reducing short channel...

Stress-generating structure for semiconductor-on-insulator devices

Gated diode structure and method including relaxed liner

Semiconductor-on-insulator structures including a trench containing...

Method of creating asymmetric field-effect-transistors

High performance schottky-barrier-source asymmetric MOSFETs

Methods for forming high performance gates and structures thereof

Method of forming a resistor and an FET from the metal portion of a...

Creating increased mobility in a bipolar device

Tuneable semiconductor device with discontinuous portions in the su...

Method of fabricating self-aligned bipolar transistor having tapere...

Bipolar transistor with isolation and direct contacts

Bipolar transistor self-alignment with raised extrinsic base extens...

Methods to improve the SiGe heterojunction bipolar device performance

Bipolar transistor having self-aligned silicide and a self-aligned...

Bipolar transistor with collector having an epitaxial Si:C region

Structure and method of self-aligned bipolar transistor having tape...

Field effect transistor having an asymmetrically stressed channel r...

Bipolar structure with two base-emitter junctions in the same circuit

Creating increased mobility in a bipolar device

Self-aligned mask formed utilizing differential oxidation rates of...

Bipolar transistor with isolation and direct contacts

Bipolar transistor with a very narrow emitter feature

Bipolar transistor with collector having an epitaxial Si:C region

Methods to improve the SiGe heterojunction bipolar device performance

Bipolar transistor with extrinsic stress layer

Patents Applicationslast 30 patents

FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL...

SEMICONDUCTOR DEVICE HAVING DIFFUSION BARRIER TO REDUCE BACK CHANNE...

FACETED INTRINSIC EPITAXIAL BUFFER LAYER FOR REDUCING SHORT CHANNEL...

SEMICONDUCTOR DEVICE HAVING DIFFUSION BARRIER TO REDUCE BACK CHANNE...

STRESS-GENERATING STRUCTURE FOR SEMICONDUCTOR-ON-INSULATOR DEVICES

STRESS-GENERATING STRUCTURE FOR SEMICONDUCTOR-ON-INSULATOR DEVICES

METHOD OF CREATING ASYMMETRIC FIELD-EFFECT-TRANSISTORS

Gated Diode Structure and Method Including Relaxed Liner

METHODS FOR FORMING HIGH PERFORMANCE GATES AND STRUCTURES THEREOF

HIGH PERFORMANCE SCHOTTKY-BARRIER-SOURCE ASYMMETRIC MOSFETS

RESISTOR AND FET FORMED FROM THE METAL PORTION OF A MOSFET METAL GA...

STRESS-GENERATING STRUCTURE FOR SEMICONDUCTOR-ON-INSULATOR DEVICES

SRAM CELLS WITH ASYMMETRIC FLOATING-BODY PASS-GATE TRANSISTORS

Method of fabricating self-aligned bipolar transistor having tapere...

METHODS TO IMPROVE THE SiGe HETEROJUNCTION BIPOLAR DEVICE PERFORMANCE

CREATING INCREASED MOBILITY IN A BIPOLAR DEVICE

TUNEABLE SEMICONDUCTOR DEVICE

BIPOLAR TRANSISTOR WITH ISOLATION AND DIRECT CONTACTS

Bipolar transistor with collector having an epitaxial Si:C region

STRUCTURE AND METHOD OF MAKING A FIELD EFFECT TRANSISTOR HAVING AN...

METHODS TO IMPROVE THE SIGE HETEROJUNCTION BIPOLAR DEVICE PERFORMANCE

BIPOLAR TRANSISTOR WITH COLLECTOR HAVING AN EPITAXIAL Si:C REGION

Bipolar transistor with extrinsic stress layer

CREATING INCREASED MOBILITY IN A BIPOLAR DEVICE

BIPOLAR TRANSISTOR WITH ISOLATION AND DIRECT CONTACTS

Bipolar transistor having self-aligned silicide and a self-aligned...

Bipolar transistor self-alignment with raised extrinsic base extens...

STRUCTURE AND METHOD OF FORMING A BIPOLAR TRANSISTOR HAVING A VOID...

STRUCTURE AND METHOD OF SELF-ALIGNED BIPOLAR TRANSISTOR HAVING TAPE...

Bipolar structure with two base-emitter junctions in the same circuit