Gu-Huan LI

Person

Zhubei City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Memory device and operating method of the same
- Patent number 12,347,505
- Issue date Jul 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Gu-Huan Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory devices with different word lines
- Patent number 12,315,561
- Issue date May 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuit and method of operating same
- Patent number 12,237,028
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Hao Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory devices with diode-connected MOS
- Patent number 12,230,338
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with a bias circuit
- Patent number 12,190,927
- Issue date Jan 7, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuits and devices, and methods thereof
- Patent number 12,183,397
- Issue date Dec 31, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yih Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory circuit and method
- Patent number 12,165,722
- Issue date Dec 10, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Gu-Huan Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory devices with different word lines
- Patent number 12,051,464
- Issue date Jul 30, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and operating method of the same
- Patent number 12,002,528
- Issue date Jun 4, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Gu-Huan Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory devices with diode-connected MOS
- Patent number 11,955,191
- Issue date Apr 9, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices with improved refreshing operation
- Patent number 11,935,620
- Issue date Mar 19, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yue-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuit and method of operating same
- Patent number 11,862,264
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Hao Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory circuit
- Patent number 11,791,006
- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Gu-Huan Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and operating method of the same
- Patent number 11,735,280
- Issue date Aug 22, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Gu-Huan Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor memory devices with diode-connected MOS
- Patent number 11,688,481
- Issue date Jun 27, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuit and method of operating same
- Patent number 11,568,948
- Issue date Jan 31, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chun-Hao Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory circuit and method
- Patent number 11,450,395
- Issue date Sep 20, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd
- Gu-Huan Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices with improved refreshing operation
- Patent number 11,043,249
- Issue date Jun 22, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yue-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices with improved refreshing operation
- Patent number 10,475,490
- Issue date Nov 12, 2019
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yue-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory controller, memory device and method of operating
- Patent number 10,141,063
- Issue date Nov 27, 2018
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yue-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of setting a reference current in a nonvolatile memory device
- Patent number 9,934,864
- Issue date Apr 3, 2018
- Taiwan Semiconductor Manufacturing Company Limited
- Hsu-Shun Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices with improved refreshing operation
- Patent number 9,812,182
- Issue date Nov 7, 2017
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yue-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit for generating an output voltage and method for setting an...
- Patent number 9,715,245
- Issue date Jul 25, 2017
- Taiwan Semiconductor Manufacturing Company Limited
- Chen-Lun Yen
- G05 - CONTROLLING REGULATING
Information Patent Grant
Multiple-time programmable memory
- Patent number 9,613,710
- Issue date Apr 4, 2017
- Taiwan Semiconductor Manufacturing Company Limited
- Hsu-Shun Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Nonvolatile memory device and method of setting a reference current...
- Patent number 9,595,340
- Issue date Mar 14, 2017
- Taiwan Semiconductor Manufacturing Company Limited
- Hsu-Shun Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Systems, devices and methods for memory operations
- Patent number 9,502,122
- Issue date Nov 22, 2016
- Taiwan Semiconductor Manufacturing Company Limited
- Yue-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Grant
Multiple-time programmable memory
- Patent number 9,478,297
- Issue date Oct 25, 2016
- Taiwan Semiconductor Manufacturing Company Limited
- Hsu-Shun Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory, semiconductor device including the same, and method for tes...
- Patent number 9,472,247
- Issue date Oct 18, 2016
- Taiwan Semiconductor Manufacturing Company Limited
- Cheng-Hsiung Kuo
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory devices with improved refreshing operation
- Patent number 9,455,006
- Issue date Sep 27, 2016
- Taiwan Semiconductor Manufacturing Co., Ltd
- Yue-Der Chih
- G11 - INFORMATION STORAGE
Information Patent Grant
Source line voltage regulation scheme for leakage reduction
- Patent number 9,324,383
- Issue date Apr 26, 2016
- Taiwan Semiconductor Manufacturing Company, Ltd
- Gu-Huan Li
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
LEVEL-AWARE BIAS VOLTAGE GENERATOR AND SEMICONDUCTOR DEVICE
- Publication number 20250211232
- Publication date Jun 26, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- GU-HUAN LI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT AND METHOD OF OPERATING SAME
- Publication number 20250191667
- Publication date Jun 12, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Hao CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES WITH DIODE-CONNECTED MOS
- Publication number 20250182835
- Publication date Jun 5, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
BACKSIDE ISOLATION OF SEMICONDUCTOR STRUCTURES
- Publication number 20250142946
- Publication date May 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jui-Lin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH A BIAS CIRCUIT
- Publication number 20250140296
- Publication date May 1, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY CIRCUIT AND METHOD
- Publication number 20250104785
- Publication date Mar 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gu-Huan LI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT, INTERFACE CIRCUIT FOR MEMORY CIRCUIT, AND METHOD OF...
- Publication number 20250087259
- Publication date Mar 13, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chen-Wei LIANG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUITS AND DEVICES, AND METHODS THEREOF
- Publication number 20250069659
- Publication date Feb 27, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yih WANG
- G11 - INFORMATION STORAGE
Information Patent Application
One-Time Programming Memory Device with Backside Isolation Structure
- Publication number 20250048686
- Publication date Feb 6, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Ping-Wei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES WITH DIFFERENT WORD LINES
- Publication number 20240355385
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD OF THE SAME
- Publication number 20240290408
- Publication date Aug 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gu-Huan LI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES WITH DIODE-CONNECTED MOS
- Publication number 20240249784
- Publication date Jul 25, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT AND METHOD OF OPERATING SAME
- Publication number 20240096431
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Hao CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY CIRCUIT AND METHOD
- Publication number 20230386591
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gu-Huan LI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD OF THE SAME
- Publication number 20230343404
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gu-Huan LI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES WITH DIODE-CONNECTED MOS
- Publication number 20230307074
- Publication date Sep 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT AND METHOD OF OPERATING SAME
- Publication number 20230154557
- Publication date May 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Hao CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE
- Publication number 20230054577
- Publication date Feb 23, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND OPERATING METHOD OF THE SAME
- Publication number 20230050710
- Publication date Feb 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gu-Huan LI
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY CIRCUIT
- Publication number 20220383929
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gu-Huan LI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUITS AND DEVICES, AND METHODS THEREOF
- Publication number 20220366984
- Publication date Nov 17, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yih WANG
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES WITH DIFFERENT WORD LINES
- Publication number 20220351774
- Publication date Nov 3, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Sheng Chang
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR MEMORY DEVICES WITH DIODE-CONNECTED MOS
- Publication number 20220328116
- Publication date Oct 13, 2022
- Taiwan Semiconductor Manufacturing company Ltd.
- Perng-Fei Yuh
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT AND METHOD OF OPERATING SAME
- Publication number 20220262446
- Publication date Aug 18, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chun-Hao CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY CIRCUIT AND METHOD
- Publication number 20220262445
- Publication date Aug 18, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Gu-Huan LI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES WITH IMPROVED REFRESHING OPERATION
- Publication number 20210312960
- Publication date Oct 7, 2021
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yue-Der CHIH
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES WITH IMPROVED REFRESHING OPERATION
- Publication number 20200075068
- Publication date Mar 5, 2020
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yue-Der CHIH
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICES WITH IMPROVED REFRESHING OPERATION
- Publication number 20180033471
- Publication date Feb 1, 2018
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Yue-Der CHIH
- G11 - INFORMATION STORAGE
Information Patent Application
Method of Setting a Reference Current in a Nonvolatile Memory Device
- Publication number 20170148523
- Publication date May 25, 2017
- Taiwan Semiconductor Manufacturing Company Limited
- HSU-SHUN CHEN
- G11 - INFORMATION STORAGE
Information Patent Application
MULTIPLE-TIME PROGRAMMABLE MEMORY
- Publication number 20170040063
- Publication date Feb 9, 2017
- Taiwan Semiconductor Manufacturing Company Limited
- Hsu-Shun Chen
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Memory device and operating method of the same

Semiconductor memory devices with different word lines

Memory circuit and method of operating same

Semiconductor memory devices with diode-connected MOS

Memory device with a bias circuit

Memory circuits and devices, and methods thereof

Non-volatile memory circuit and method

Semiconductor memory devices with different word lines

Memory device and operating method of the same

Semiconductor memory devices with diode-connected MOS

Memory devices with improved refreshing operation

Memory circuit and method of operating same

Non-volatile memory circuit

Memory device and operating method of the same

Semiconductor memory devices with diode-connected MOS

Memory circuit and method of operating same

Non-volatile memory circuit and method

Memory devices with improved refreshing operation

Memory devices with improved refreshing operation

Memory controller, memory device and method of operating

Method of setting a reference current in a nonvolatile memory device

Memory devices with improved refreshing operation

Circuit for generating an output voltage and method for setting an...

Multiple-time programmable memory

Nonvolatile memory device and method of setting a reference current...

Systems, devices and methods for memory operations

Multiple-time programmable memory

Memory, semiconductor device including the same, and method for tes...

Memory devices with improved refreshing operation

Source line voltage regulation scheme for leakage reduction

Patents Applicationslast 30 patents

LEVEL-AWARE BIAS VOLTAGE GENERATOR AND SEMICONDUCTOR DEVICE

MEMORY CIRCUIT AND METHOD OF OPERATING SAME

SEMICONDUCTOR MEMORY DEVICES WITH DIODE-CONNECTED MOS

BACKSIDE ISOLATION OF SEMICONDUCTOR STRUCTURES

MEMORY DEVICE WITH A BIAS CIRCUIT

NON-VOLATILE MEMORY CIRCUIT AND METHOD

MEMORY CIRCUIT, INTERFACE CIRCUIT FOR MEMORY CIRCUIT, AND METHOD OF...

MEMORY CIRCUITS AND DEVICES, AND METHODS THEREOF

One-Time Programming Memory Device with Backside Isolation Structure

SEMICONDUCTOR MEMORY DEVICES WITH DIFFERENT WORD LINES

MEMORY DEVICE AND OPERATING METHOD OF THE SAME

SEMICONDUCTOR MEMORY DEVICES WITH DIODE-CONNECTED MOS

MEMORY CIRCUIT AND METHOD OF OPERATING SAME

NON-VOLATILE MEMORY CIRCUIT AND METHOD

MEMORY DEVICE AND OPERATING METHOD OF THE SAME

SEMICONDUCTOR MEMORY DEVICES WITH DIODE-CONNECTED MOS

MEMORY CIRCUIT AND METHOD OF OPERATING SAME

MEMORY DEVICE

MEMORY DEVICE AND OPERATING METHOD OF THE SAME

NON-VOLATILE MEMORY CIRCUIT

MEMORY CIRCUITS AND DEVICES, AND METHODS THEREOF

SEMICONDUCTOR MEMORY DEVICES WITH DIFFERENT WORD LINES

SEMICONDUCTOR MEMORY DEVICES WITH DIODE-CONNECTED MOS

MEMORY CIRCUIT AND METHOD OF OPERATING SAME

NON-VOLATILE MEMORY CIRCUIT AND METHOD

MEMORY DEVICES WITH IMPROVED REFRESHING OPERATION

MEMORY DEVICES WITH IMPROVED REFRESHING OPERATION

MEMORY DEVICES WITH IMPROVED REFRESHING OPERATION

Method of Setting a Reference Current in a Nonvolatile Memory Device

MULTIPLE-TIME PROGRAMMABLE MEMORY