Guang-Yaw Hwang

Person

Tainan City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Oxygen treatment of replacement work-function metals in CMOS transi...
- Patent number 9,384,962
- Issue date Jul 5, 2016
- United Microelectronics Corp.
- Guang-Yaw Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained silicon structure
- Patent number 9,312,258
- Issue date Apr 12, 2016
- United Microelectronics Corp.
- Guang-Yaw Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metal gate and manufacturing method the...
- Patent number 8,999,830
- Issue date Apr 7, 2015
- United Microelectronics Corp.
- Po-Jui Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metal gate and manufacturing method the...
- Patent number 8,952,451
- Issue date Feb 10, 2015
- United Microelectronics Corp.
- Po-Jui Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having metal gates
- Patent number 8,802,524
- Issue date Aug 12, 2014
- United Microelectronics Corp.
- Po-Jui Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pattern forming method
- Patent number 8,791,013
- Issue date Jul 29, 2014
- United Microelectronics Corp.
- Shin-Chi Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metal gate and manufacturing method the...
- Patent number 8,704,294
- Issue date Apr 22, 2014
- United Microelectronics Corp.
- Po-Jui Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained silicon structure
- Patent number 8,552,503
- Issue date Oct 8, 2013
- United Microelectronics Corp.
- Guang-Yaw Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 8,431,460
- Issue date Apr 30, 2013
- United Microelectronics Corp.
- Shin-Chuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metal gate and manufacturing method the...
- Patent number 8,310,012
- Issue date Nov 13, 2012
- United Microelectronics Corp.
- Guang-Yaw Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual damascene process
- Patent number 8,298,935
- Issue date Oct 30, 2012
- United Microelectronics Corp.
- Shin-Chi Chen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH OXYGEN-CONTAINING METAL GATES
- Publication number 20140339652
- Publication date Nov 20, 2014
- Guang-Yaw Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THE...
- Publication number 20140127892
- Publication date May 8, 2014
- UNITED MICROELECTRONICS CORP.
- Po-Jui Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THE...
- Publication number 20140103443
- Publication date Apr 17, 2014
- UNITED MICROELECTRONICS CORP.
- Po-Jui Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SILICON STRUCTURE
- Publication number 20130292775
- Publication date Nov 7, 2013
- Guang-Yaw Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THE...
- Publication number 20120313178
- Publication date Dec 13, 2012
- Po-Jui Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20120299058
- Publication date Nov 29, 2012
- United Microelectronics Corp.
- Shin-Chuan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PATTERN FORMING METHOD
- Publication number 20120302056
- Publication date Nov 29, 2012
- Shin-Chi Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Gate and Fabricating Method Thereof
- Publication number 20120256276
- Publication date Oct 11, 2012
- Guang-Yaw Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing Semiconductor Device Having Metal Gates
- Publication number 20120244669
- Publication date Sep 27, 2012
- Po-Jui Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED SILICON STRUCTURE
- Publication number 20120132996
- Publication date May 31, 2012
- Guang-Yaw Hwang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL DAMASCENE PROCESS
- Publication number 20120129337
- Publication date May 24, 2012
- Shin-Chi Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THE...
- Publication number 20110248359
- Publication date Oct 13, 2011
- Guang-Yaw Hwang
- H01 - BASIC ELECTRIC ELEMENTS

Guang-Yaw Hwang

Person

Patents Grantslast 30 patents

Oxygen treatment of replacement work-function metals in CMOS transi...

Strained silicon structure

Semiconductor device having metal gate and manufacturing method the...

Semiconductor device having metal gate and manufacturing method the...

Method of manufacturing semiconductor device having metal gates

Pattern forming method

Semiconductor device having metal gate and manufacturing method the...

Strained silicon structure

Method for fabricating semiconductor device

Semiconductor device having metal gate and manufacturing method the...

Dual damascene process

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH OXYGEN-CONTAINING METAL GATES

SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THE...

SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THE...

STRAINED SILICON STRUCTURE

SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THE...

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

PATTERN FORMING METHOD

Metal Gate and Fabricating Method Thereof

Method of Manufacturing Semiconductor Device Having Metal Gates

STRAINED SILICON STRUCTURE

DUAL DAMASCENE PROCESS

SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THE...