Guangsheng ZHANG

Person

Wuxi New District, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing an LDMOS device having a well region below...
- Patent number 11,309,406
- Issue date Apr 19, 2022
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Nailong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and related method of adjusting threshold volt...
- Patent number 10,818,655
- Issue date Oct 27, 2020
- CSMC Technologies FAB2 Co., Ltd.
- Guangsheng Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal-oxide-semiconductor field-effect transistor
- Patent number 10,014,392
- Issue date Jul 3, 2018
- CSMC Technologies Fab2 Co., Ltd.
- Shukun Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having ESD protection structure
- Patent number 9,953,970
- Issue date Apr 24, 2018
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Guangsheng Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal oxide semiconductor device and manufacturi...
- Patent number 9,837,532
- Issue date Dec 5, 2017
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Guangsheng Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LDMOS DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20210175347
- Publication date Jun 10, 2021
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Nailong HE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE P-TYPE LATERAL DOUBLE-DIFFUSED METAL OXIDE SEMICONDUCT...
- Publication number 20180190815
- Publication date Jul 5, 2018
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Guangsheng ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
- Publication number 20180122921
- Publication date May 3, 2018
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shukun QI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-TYPE LATERAL DOUBLE-DIFFUSED METAL-OXIDE-SEMICONDUCTOR FIELD-EFFE...
- Publication number 20170271505
- Publication date Sep 21, 2017
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Xiaolong HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING ESD PROTECTION STRUCTURE
- Publication number 20170062405
- Publication date Mar 2, 2017
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Guangsheng ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURI...
- Publication number 20170054018
- Publication date Feb 23, 2017
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Guangsheng ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURI...
- Publication number 20160240659
- Publication date Aug 18, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Guangsheng ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR
- Publication number 20160233216
- Publication date Aug 11, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Guangsheng ZHANG
- H01 - BASIC ELECTRIC ELEMENTS

Guangsheng ZHANG

Person

Patents Grantslast 30 patents

Method of manufacturing an LDMOS device having a well region below...

Semiconductor device and related method of adjusting threshold volt...

Laterally diffused metal-oxide-semiconductor field-effect transistor

Semiconductor device having ESD protection structure

Laterally diffused metal oxide semiconductor device and manufacturi...

Patents Applicationslast 30 patents

LDMOS DEVICE AND MANUFACTURING METHOD THEREOF

HIGH VOLTAGE P-TYPE LATERAL DOUBLE-DIFFUSED METAL OXIDE SEMICONDUCT...

LATERALLY DIFFUSED METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

N-TYPE LATERAL DOUBLE-DIFFUSED METAL-OXIDE-SEMICONDUCTOR FIELD-EFFE...

SEMICONDUCTOR DEVICE HAVING ESD PROTECTION STRUCTURE

LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURI...

LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURI...

SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR