Guipeng SUN

Person

Wuxi New District, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Heterojunction semiconductor device with low on-resistance
- Patent number 12,224,340
- Issue date Feb 11, 2025
- Southeast University
- Siyang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device and method for preparation thereof
- Patent number 12,205,996
- Issue date Jan 21, 2025
- CSMC Technologies FAB2 Co., Ltd.
- Huajun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 11,552,164
- Issue date Jan 10, 2023
- CSMC Technologies Fab2 Co., Ltd.
- Huajun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, and manufacturing method thereof
- Patent number 11,462,628
- Issue date Oct 4, 2022
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Huajun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS component, manufacturing method therefor, and electronic device
- Patent number 11,158,737
- Issue date Oct 26, 2021
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Huajun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing isolation structure for LDMOS
- Patent number 11,127,840
- Issue date Sep 21, 2021
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shukun Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 10,811,520
- Issue date Oct 20, 2020
- CSMC Technologies Fab2 Co., Ltd.
- Huajun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral diffused metal oxide semiconductor field effect transistor
- Patent number 10,505,036
- Issue date Dec 10, 2019
- CSMC Technologies FAB2 Co., Ltd.
- Shukun Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic protection device of LDMOS silicon controlled structure
- Patent number 10,381,343
- Issue date Aug 13, 2019
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Jun Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal oxide semiconductor field-effect transisto...
- Patent number 10,290,705
- Issue date May 14, 2019
- CSMC Technologies Fab2 Co., Ltd.
- Feng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal-oxide semiconductor field-effect transistor
- Patent number 10,199,495
- Issue date Feb 5, 2019
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shukun Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal-oxide-semiconductor field-effect transistor
- Patent number 10,014,392
- Issue date Jul 3, 2018
- CSMC Technologies Fab2 Co., Ltd.
- Shukun Qi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction field effect transistor and manufacturing method therefor
- Patent number 9,947,785
- Issue date Apr 17, 2018
- CSMC Technologies Fab1 Co., Ltd.
- Guangtao Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing laterally insulated-gate bipolar transistor
- Patent number 9,865,702
- Issue date Jan 9, 2018
- CSMC Technologies Fab2 Co., Ltd.
- Feng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal oxide semiconductor device and manufacturi...
- Patent number 9,768,292
- Issue date Sep 19, 2017
- CSMC Technologies Fab1 Co., Ltd.
- Shu Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral double diffused metal oxide semiconductor field-effect tran...
- Patent number 9,716,169
- Issue date Jul 25, 2017
- CSMC Technologies Fabi Co., Ltd.
- Feng Huang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LDMOS DEVICE AND METHOD FOR PREPARATION THEREOF
- Publication number 20230163177
- Publication date May 25, 2023
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Huajun JIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGZO THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME
- Publication number 20220367722
- Publication date Nov 17, 2022
- SOUTHEAST UNIVERSITY
- Wangran WU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION SEMICONDUCTOR DEVICE WITH LOW ON-RESISTANCE
- Publication number 20220069115
- Publication date Mar 3, 2022
- SOUTHEAST UNIVERSITY
- Siyang LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Manufacturing Method Therefor
- Publication number 20210242305
- Publication date Aug 5, 2021
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Huajun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF
- Publication number 20210167190
- Publication date Jun 3, 2021
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Huajun JIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS COMPONENT, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE
- Publication number 20200220010
- Publication date Jul 9, 2020
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Huajun JIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING ISOLATION STRUCTURE FOR LDMOS
- Publication number 20200006529
- Publication date Jan 2, 2020
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shukun QI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20190378912
- Publication date Dec 12, 2019
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Huajun JIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR
- Publication number 20180342609
- Publication date Nov 29, 2018
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shukun QI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
- Publication number 20180286976
- Publication date Oct 4, 2018
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shukun QI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTO...
- Publication number 20180130877
- Publication date May 10, 2018
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Feng HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
- Publication number 20180122921
- Publication date May 3, 2018
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Shukun QI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTROSTATIC PROTECTION DEVICE OF LDMOS SILICON CONTROLLED STRUCTURE
- Publication number 20180122794
- Publication date May 3, 2018
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Jun SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREPARATION METHOD FOR FLAT CELL ROM DEVICE
- Publication number 20180006043
- Publication date Jan 4, 2018
- CSMC TECHNOLOGIES FAB2 CO., LTD.
- Guipeng SUN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING LATERALLY INSULATED-GATE BIPOLAR TRANSISTOR
- Publication number 20170358657
- Publication date Dec 14, 2017
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Feng HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR
- Publication number 20170133505
- Publication date May 11, 2017
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Guangtao HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRAN...
- Publication number 20160372591
- Publication date Dec 22, 2016
- Feng Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURI...
- Publication number 20160099347
- Publication date Apr 7, 2016
- CSMC TECHNOLOGIES FAB1 CO., LTD.
- Shu Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Guipeng SUN

Person

Patents Grantslast 30 patents

Heterojunction semiconductor device with low on-resistance

LDMOS device and method for preparation thereof

Semiconductor device and manufacturing method therefor

Semiconductor device, and manufacturing method thereof

LDMOS component, manufacturing method therefor, and electronic device

Method for manufacturing isolation structure for LDMOS

Semiconductor device and method for manufacturing same

Lateral diffused metal oxide semiconductor field effect transistor

Electrostatic protection device of LDMOS silicon controlled structure

Laterally diffused metal oxide semiconductor field-effect transisto...

Laterally diffused metal-oxide semiconductor field-effect transistor

Laterally diffused metal-oxide-semiconductor field-effect transistor

Junction field effect transistor and manufacturing method therefor

Method for manufacturing laterally insulated-gate bipolar transistor

Laterally diffused metal oxide semiconductor device and manufacturi...

Lateral double diffused metal oxide semiconductor field-effect tran...

Patents Applicationslast 30 patents

LDMOS DEVICE AND METHOD FOR PREPARATION THEREOF

IGZO THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME

HETEROJUNCTION SEMICONDUCTOR DEVICE WITH LOW ON-RESISTANCE

Semiconductor Device and Manufacturing Method Therefor

SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF

LDMOS COMPONENT, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE

METHOD FOR MANUFACTURING ISOLATION STRUCTURE FOR LDMOS

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR

LATERALLY DIFFUSED METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTO...

LATERALLY DIFFUSED METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR

ELECTROSTATIC PROTECTION DEVICE OF LDMOS SILICON CONTROLLED STRUCTURE

PREPARATION METHOD FOR FLAT CELL ROM DEVICE

METHOD FOR MANUFACTURING LATERALLY INSULATED-GATE BIPOLAR TRANSISTOR

JUNCTION FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR

LATERAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRAN...

LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE AND MANUFACTURI...