Gunter Grasshoff

Person

Dresden, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices having silicon/germanium active regions with...
- Patent number 11,031,406
- Issue date Jun 8, 2021
- GLOBALFOUNDRIES U.S. INC.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including Si/Ge active regions with different...
- Patent number 10,522,555
- Issue date Dec 31, 2019
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and manufacturing techniques for reduced aspe...
- Patent number 10,224,251
- Issue date Mar 5, 2019
- GLOBALFOUNDRIES Inc.
- Hans-Peter Moll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a gate cap layer above a replacement gate structure
- Patent number 10,199,479
- Issue date Feb 5, 2019
- GLOBALFOUNDRIES Inc.
- Gunter Grasshoff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising trench isolation
- Patent number 10,103,067
- Issue date Oct 16, 2018
- GLOBALFOUNDRIES Inc.
- Peter Baars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor structure including a ferroelectr...
- Patent number 9,412,600
- Issue date Aug 9, 2016
- GLOBALFOUNDRIES Inc.
- Ralf van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancing integrity of a high-K gate stack by protecting a liner at...
- Patent number 8,932,930
- Issue date Jan 13, 2015
- Advanced Micro Devices, Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming conductive structures using a spacer erosion tec...
- Patent number 8,791,017
- Issue date Jul 29, 2014
- GLOBALFOUNDRIES Inc.
- Gunter Grasshoff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancing integrity of a high-k gate stack by protecting a liner at...
- Patent number 8,329,549
- Issue date Dec 11, 2012
- Advanced Micro Devices Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Using high-k dielectrics as highly selective etch stop materials in...
- Patent number 8,198,166
- Issue date Jun 12, 2012
- GLOBALFOUNDRIES, INC.
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etch methods for semiconductor device fabrication
- Patent number 8,133,814
- Issue date Mar 13, 2012
- GLOBALFOUNDRIES Inc.
- Steffen Laufer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming CMOS device having gate insulation layers of diff...
- Patent number 8,021,942
- Issue date Sep 20, 2011
- GLOBALFOUNDRIES Inc.
- Andy Wei
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
CMOS device comprising MOS transistors with recessed drain and sour...
- Patent number 7,723,174
- Issue date May 25, 2010
- GLOBALFOUNDRIES Inc.
- Andrew Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming embedded strained drain/source regions based on...
- Patent number 7,381,622
- Issue date Jun 3, 2008
- Advanced Micro Devices, Inc.
- Andreas Hellmich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Signal layer for generating characteristic optical plasma emissions
- Patent number 7,005,305
- Issue date Feb 28, 2006
- Advanced Micro Devices, Inc.
- Gunter Grasshoff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of adjusting etch selectivity by adapting aspect ratios in a...
- Patent number 6,969,676
- Issue date Nov 29, 2005
- Advanced Micro Devices, Inc.
- Christoph Schwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Advanced process control for a manufacturing process of a plurality...
- Patent number 6,879,871
- Issue date Apr 12, 2005
- Advanced Micro Devices, Inc.
- Gunter Grasshoff
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Methods for producing a highly doped electrode for a field effect t...
- Patent number 6,875,676
- Issue date Apr 5, 2005
- Advanced Micro Devices, Inc.
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for wafer-based controlled patterning of features...
- Patent number 6,838,010
- Issue date Jan 4, 2005
- Advanced Micro Devices, Inc.
- Gunter Grasshoff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Die corner alignment structure
- Patent number 6,724,096
- Issue date Apr 20, 2004
- Advanced Micro Devices, Inc.
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICES INCLUDING SI/GE ACTIVE REGIONS WITH DIFFERENT...
- Publication number 20190312041
- Publication date Oct 10, 2019
- GLOBALFOUNDRIES INC.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING SILICON/GERMANIUM A...
- Publication number 20190312042
- Publication date Oct 10, 2019
- GLOBALFOUNDRIES INC.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND MANUFACTURING TECHNIQUES FOR REDUCED ASPE...
- Publication number 20190043764
- Publication date Feb 7, 2019
- GLOBALFOUNDRIES INC.
- Hans-Peter Moll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-VOLTAGE TRANSISTOR DEVICE
- Publication number 20170338343
- Publication date Nov 23, 2017
- GLOBALFOUNDRIES INC.
- Sylvain Henri Baudot
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE INCLUDING A FERROELECTR...
- Publication number 20160064228
- Publication date Mar 3, 2016
- GLOBALFOUNDRIES INC.
- Ralf van Bentum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A GATE CAP LAYER ABOVE A REPLACEMENT GATE STRUCTURE
- Publication number 20160056263
- Publication date Feb 25, 2016
- GLOBALFOUNDRIES INC.
- Gunter Grasshoff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming a Gate Cap Layer Above a Replacement Gate Struct...
- Publication number 20130181265
- Publication date Jul 18, 2013
- GLOBALFOUNDRIES INC.
- Gunter Grasshoff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCING INTEGRITY OF A HIGH-K GATE STACK BY PROTECTING A LINER AT...
- Publication number 20130157432
- Publication date Jun 20, 2013
- Advanced Micro Devices, Inc.
- Sven BEYER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Conductive Structures Using a Spacer Erosion Tec...
- Publication number 20130109174
- Publication date May 2, 2013
- GLOBALFOUNDRIES INC.
- Gunter Grasshoff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
USING HIGH-K DIELECTRICS AS HIGHLY SELECTIVE ETCH STOP MATERIALS IN...
- Publication number 20110024805
- Publication date Feb 3, 2011
- Thorsten Kammler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCING INTEGRITY OF A HIGH-K GATE STACK BY PROTECTING A LINER AT...
- Publication number 20100136762
- Publication date Jun 3, 2010
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING A STRAINED CHANNEL REGION CAUSED BY HYDROGEN-INDU...
- Publication number 20100025742
- Publication date Feb 4, 2010
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS DEVICE COMPRISING MOS TRANSISTORS WITH RECESSED DRAIN AND SOUR...
- Publication number 20090321843
- Publication date Dec 31, 2009
- Andrew Waite
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS DEVICE HAVING GATE INSULATION LAYERS OF DIFFERENT TYPE AND THI...
- Publication number 20090057769
- Publication date Mar 5, 2009
- Andy Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING EMBEDDED STRAINED DRAIN/SOURCE REGIONS BASED ON...
- Publication number 20070232006
- Publication date Oct 4, 2007
- Andreas Hellmich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a substrate contact for an SOI semiconductor device
- Publication number 20040241917
- Publication date Dec 2, 2004
- Christoph Schwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of adjusting etch selectivity by adapting aspect ratios in a...
- Publication number 20040241984
- Publication date Dec 2, 2004
- Christoph Schwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma parameter control using learning data
- Publication number 20040118516
- Publication date Jun 24, 2004
- Gunter Grasshoff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Signal layer for generating characteristic optical plasma emissions
- Publication number 20040106284
- Publication date Jun 3, 2004
- Gunter Grasshoff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and an apparatus for determining the dimension of a feature...
- Publication number 20040084619
- Publication date May 6, 2004
- Carsten Hartig
- G01 - MEASURING TESTING
Information Patent Application
Highly doped electrode for a field effect transistor and method for...
- Publication number 20040016974
- Publication date Jan 29, 2004
- Karsten Wieczorek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Advanced process control for a manufacturing process of a plurality...
- Publication number 20030204278
- Publication date Oct 30, 2003
- Gunter Grasshoff
- G05 - CONTROLLING REGULATING
Information Patent Application
System and method for wafer-based controlled patterning of features...
- Publication number 20030015493
- Publication date Jan 23, 2003
- Gunter Grasshoff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Die corner alignment structure
- Publication number 20020185753
- Publication date Dec 12, 2002
- Thomas Werner
- H01 - BASIC ELECTRIC ELEMENTS

Gunter Grasshoff

Person

Patents Grantslast 30 patents

Semiconductor devices having silicon/germanium active regions with...

Semiconductor devices including Si/Ge active regions with different...

Semiconductor devices and manufacturing techniques for reduced aspe...

Methods of forming a gate cap layer above a replacement gate structure

Semiconductor device comprising trench isolation

Method of forming a semiconductor structure including a ferroelectr...

Enhancing integrity of a high-K gate stack by protecting a liner at...

Methods of forming conductive structures using a spacer erosion tec...

Enhancing integrity of a high-k gate stack by protecting a liner at...

Using high-k dielectrics as highly selective etch stop materials in...

Etch methods for semiconductor device fabrication

Method of forming CMOS device having gate insulation layers of diff...

CMOS device comprising MOS transistors with recessed drain and sour...

Method for forming embedded strained drain/source regions based on...

Signal layer for generating characteristic optical plasma emissions

Method of adjusting etch selectivity by adapting aspect ratios in a...

Advanced process control for a manufacturing process of a plurality...

Methods for producing a highly doped electrode for a field effect t...

System and method for wafer-based controlled patterning of features...

Die corner alignment structure

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICES INCLUDING SI/GE ACTIVE REGIONS WITH DIFFERENT...

METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING SILICON/GERMANIUM A...

SEMICONDUCTOR DEVICES AND MANUFACTURING TECHNIQUES FOR REDUCED ASPE...

HIGH-VOLTAGE TRANSISTOR DEVICE

METHOD OF FORMING A SEMICONDUCTOR STRUCTURE INCLUDING A FERROELECTR...

METHODS OF FORMING A GATE CAP LAYER ABOVE A REPLACEMENT GATE STRUCTURE

Methods of Forming a Gate Cap Layer Above a Replacement Gate Struct...

ENHANCING INTEGRITY OF A HIGH-K GATE STACK BY PROTECTING A LINER AT...

Methods of Forming Conductive Structures Using a Spacer Erosion Tec...

USING HIGH-K DIELECTRICS AS HIGHLY SELECTIVE ETCH STOP MATERIALS IN...

ENHANCING INTEGRITY OF A HIGH-K GATE STACK BY PROTECTING A LINER AT...

TRANSISTOR HAVING A STRAINED CHANNEL REGION CAUSED BY HYDROGEN-INDU...

CMOS DEVICE COMPRISING MOS TRANSISTORS WITH RECESSED DRAIN AND SOUR...

CMOS DEVICE HAVING GATE INSULATION LAYERS OF DIFFERENT TYPE AND THI...

METHOD FOR FORMING EMBEDDED STRAINED DRAIN/SOURCE REGIONS BASED ON...

Method of forming a substrate contact for an SOI semiconductor device

Method of adjusting etch selectivity by adapting aspect ratios in a...

Plasma parameter control using learning data

Signal layer for generating characteristic optical plasma emissions

Method and an apparatus for determining the dimension of a feature...

Highly doped electrode for a field effect transistor and method for...

Advanced process control for a manufacturing process of a plurality...

System and method for wafer-based controlled patterning of features...

Die corner alignment structure