Guoyou LIU

Person

Zhuzhou, CN

People

Patents Grantslast 30 patents

Information Patent Grant
High power density 3D semiconductor module packaging
- Patent number 12,068,298
- Issue date Aug 20, 2024
- DYNEX SEMICONDUCTOR LIMITED
- Yangang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT chip having folded composite gate structure
- Patent number 11,848,375
- Issue date Dec 19, 2023
- ZHUZHOU CRRC TIMES ELECTRIC CO., LTD.
- Guoyou Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IGBT chip having mixed gate structure
- Patent number 11,329,130
- Issue date May 10, 2022
- ZHUZHOU CRRC TIMES ELECTRIC CO., LTD.
- Guoyou Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide MOSFET device and method for manufacturing the same
- Patent number 10,680,067
- Issue date Jun 9, 2020
- Institute of Microelectronics, Chinese Academy of Sciences
- Yidan Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide MOSFET device and method for manufacturing the same
- Patent number 10,475,896
- Issue date Nov 12, 2019
- ZHUZHOU CRRC TIMES ELECTRIC CO., LTD.
- Yunbin Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor and preparation method therefor
- Patent number 10,418,469
- Issue date Sep 17, 2019
- ZHUZHOU CRRC TIMES ELECTRIC CO., LTD.
- Guoyou Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse conducting IGBT device and manufacturing method therefor
- Patent number 10,319,595
- Issue date Jun 11, 2019
- ZHUZHOU CRRC TIMES ELECTRIC CO., LTD.
- Haihui Luo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20230335625
- Publication date Oct 19, 2023
- DYNEX SEMICONDUCTOR LIMITED
- Chunlin Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER DENSITY 3D SEMICONDUCTOR MODULE PACKAGING
- Publication number 20220352137
- Publication date Nov 3, 2022
- Dynex Semiconductor Limited
- Yangang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT CHIP HAVING COMPOSITE GATE STRUCTURE
- Publication number 20210028278
- Publication date Jan 28, 2021
- ZHUZHOU CRRC TIMES ELECTRIC CO., LTD.
- Guoyou Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IGBT CHIP HAVING FOLDED COMPOSITE GATE STRUCTURE
- Publication number 20210013330
- Publication date Jan 14, 2021
- Guoyou Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE MOSFET DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20190027568
- Publication date Jan 24, 2019
- ZHUZHOU CCR TIMES ELECTRIC CO., LTD.
- Yunbin GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE MOSFET DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20190013383
- Publication date Jan 10, 2019
- Institute of Microelectronics ,Chinese Academy of Sciences
- Yidan TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE CONDUCTING IGBT DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20180269062
- Publication date Sep 20, 2018
- ZHUZHOU CRRC TIMES ELECTRIC CO., LTD.
- Haihui LUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR AND PREPARATION METHOD THEREFOR
- Publication number 20180190805
- Publication date Jul 5, 2018
- ZHUZHOU CRRC TIMES ELECTRIC CO., LTD.
- Guoyou LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE IGBT
- Publication number 20180151710
- Publication date May 31, 2018
- ZHUZHOU CCR TIMES ELECTRIC CO., LTD.
- Guoyou LIU
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

High power density 3D semiconductor module packaging

IGBT chip having folded composite gate structure

IGBT chip having mixed gate structure

Silicon carbide MOSFET device and method for manufacturing the same

Silicon carbide MOSFET device and method for manufacturing the same

Insulated gate bipolar transistor and preparation method therefor

Reverse conducting IGBT device and manufacturing method therefor

Patents Applicationslast 30 patents

POWER SEMICONDUCTOR DEVICE

HIGH POWER DENSITY 3D SEMICONDUCTOR MODULE PACKAGING

IGBT CHIP HAVING COMPOSITE GATE STRUCTURE

IGBT CHIP HAVING FOLDED COMPOSITE GATE STRUCTURE

SILICON CARBIDE MOSFET DEVICE AND METHOD FOR MANUFACTURING THE SAME

SILICON CARBIDE MOSFET DEVICE AND METHOD FOR MANUFACTURING THE SAME

REVERSE CONDUCTING IGBT DEVICE AND MANUFACTURING METHOD THEREFOR

INSULATED GATE BIPOLAR TRANSISTOR AND PREPARATION METHOD THEREFOR

TRENCH GATE IGBT