Guy Wicker

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Phase change memory electrode with multiple thermal interfaces
- Patent number 10,147,876
- Issue date Dec 4, 2018
- SanDisk Technologies LLC
- Lidu Huang
- G11 - INFORMATION STORAGE
Information Patent Grant
Heating phase change material
- Patent number 9,343,676
- Issue date May 17, 2016
- Micron Technology, Inc.
- Guy C. Wicker
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory and method therefor
- Patent number 8,889,527
- Issue date Nov 18, 2014
- Intel Corporation
- Guy C. Wicker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heating phase change material
- Patent number 8,653,495
- Issue date Feb 18, 2014
- Micron Technology, Inc.
- Guy C. Wicker
- G11 - INFORMATION STORAGE
Information Patent Grant
Lateral phase change memory
- Patent number 8,431,922
- Issue date Apr 30, 2013
- STMicroelectronics S.r.l.
- Richard Dodge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable matrix array with chalcogenide material
- Patent number 8,379,439
- Issue date Feb 19, 2013
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device
- Patent number 8,344,348
- Issue date Jan 1, 2013
- Ovonyx, Inc.
- Guy Wicker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Arsenic-containing variable resistance materials
- Patent number 8,217,379
- Issue date Jul 10, 2012
- Ovonyx, Inc.
- Carl Schell
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Lateral phase change memory
- Patent number 8,211,742
- Issue date Jul 3, 2012
- STMicroelectronics S.r.l.
- Richard Dodge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shunted phase change memory
- Patent number 8,134,860
- Issue date Mar 13, 2012
- Intel Corporation
- Guy Wicker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable resistance memory
- Patent number 8,120,940
- Issue date Feb 21, 2012
- Ovonyx, Inc.
- Guy Wicker
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memories with improved programming characteristics
- Patent number 8,062,921
- Issue date Nov 22, 2011
- Intel Corporation
- Guy C. Wicker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shunted phase change memory
- Patent number 7,916,514
- Issue date Mar 29, 2011
- Intel Corporation
- Guy Wicker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programming a normally single phase chalcogenide material for use a...
- Patent number 7,864,567
- Issue date Jan 4, 2011
- Ovonyx, Inc.
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Grant
Programmable matrix array with chalcogenide material
- Patent number 7,839,674
- Issue date Nov 23, 2010
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Lateral phase change memory
- Patent number 7,816,660
- Issue date Oct 19, 2010
- STMicroelectronics S.r.l.
- Richard Dodge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chalcogenide devices exhibiting stable operation from the as-fabric...
- Patent number 7,786,462
- Issue date Aug 31, 2010
- Ovonyx, Inc.
- Sergey A. Kostylev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Die customization using programmable resistance memory elements
- Patent number 7,663,907
- Issue date Feb 16, 2010
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Forming a carbon layer between phase change layers of a phase chang...
- Patent number 7,649,191
- Issue date Jan 19, 2010
- Intel Corporation
- Wolodymyr Czubatyj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable matrix array with chalcogenide material
- Patent number 7,646,630
- Issue date Jan 12, 2010
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically rewritable non-volatile memory element and method of m...
- Patent number 7,589,364
- Issue date Sep 15, 2009
- Elpida Memory, Inc.
- Isamu Asano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar segmented contact
- Patent number 7,579,210
- Issue date Aug 25, 2009
- Ovonyx, Inc.
- Guy Wicker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chalcogenide devices and materials having reduced germanium or tell...
- Patent number 7,525,117
- Issue date Apr 28, 2009
- Ovonyx, Inc.
- Sergey A. Kostylev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memories with improved programming characteristics
- Patent number 7,504,675
- Issue date Mar 17, 2009
- Intel Corporation
- Guy C. Wicker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Programmable matrix array with chalcogenide material
- Patent number 7,499,315
- Issue date Mar 3, 2009
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of operating a programmable resistance memory array
- Patent number 7,423,897
- Issue date Sep 9, 2008
- Ovonyx, Inc.
- Guy C. Wicker
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming a normally single phase chalcogenide material for use a...
- Patent number 7,414,883
- Issue date Aug 19, 2008
- Intel Corporation
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrically programmable memory element with improved contacts
- Patent number 7,407,829
- Issue date Aug 5, 2008
- Ovonyx, Inc.
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Grant
Lateral phase change memory and method therefor
- Patent number 7,358,521
- Issue date Apr 15, 2008
- Intel Corporation
- Guy C. Wicker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of operating a programmable resistance memory array
- Patent number 7,339,815
- Issue date Mar 4, 2008
- Ovonyx, Inc.
- Guy C. Wicker
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
HEATING PHASE CHANGE MATERIAL
- Publication number 20160211017
- Publication date Jul 21, 2016
- Micron Technology, Inc.
- Guy C. Wicker
- G11 - INFORMATION STORAGE
Information Patent Application
HEATING PHASE CHANGE MATERIAL
- Publication number 20140147965
- Publication date May 29, 2014
- Micron Technology, Inc.
- Guy C. Wicker
- G11 - INFORMATION STORAGE
Information Patent Application
LATERAL PHASE CHANGE MEMORY
- Publication number 20120241704
- Publication date Sep 27, 2012
- STMicroelectronics S.r.l.
- Richard Dodge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shunted Phase Change Memory
- Publication number 20110085376
- Publication date Apr 14, 2011
- Guy Wicker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Arsenic-Containing Variable Resistance Materials
- Publication number 20110012080
- Publication date Jan 20, 2011
- Carl Schell
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
LATERAL PHASE CHANGE MEMORY
- Publication number 20110003454
- Publication date Jan 6, 2011
- STMicroelectronics S.r.l.
- Richard Dodge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Chalcogenide Devices Exhibiting Stable Operation from the As-Fabric...
- Publication number 20100321991
- Publication date Dec 23, 2010
- Sergey A. Kostylev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Die Customization using Programmable Resistance Memory Elements
- Publication number 20100201697
- Publication date Aug 12, 2010
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Application
Programmable resistance memory
- Publication number 20100110780
- Publication date May 6, 2010
- Ovonyx, Inc.
- Guy Wicker
- G11 - INFORMATION STORAGE
Information Patent Application
Programmable Matrix Array with Chalcogenide Material
- Publication number 20100091561
- Publication date Apr 15, 2010
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Device
- Publication number 20100084625
- Publication date Apr 8, 2010
- Guy Wicker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing Chalcogenide devices
- Publication number 20090298222
- Publication date Dec 3, 2009
- Ovonyx, Inc.
- Tyler Lowrey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Non-volatile programmable variable resistance element
- Publication number 20090166601
- Publication date Jul 2, 2009
- Ovonyx, Inc.
- Wolodymyr Czubatyj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase Change Memories With Improved Programming Characteristics
- Publication number 20090142882
- Publication date Jun 4, 2009
- Guy C. Wicker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Programmable matrix array with chalcogenide material
- Publication number 20090034325
- Publication date Feb 5, 2009
- Tyler Lowrey
- G11 - INFORMATION STORAGE
Information Patent Application
Programming a normally single phase chalcogenide material for use a...
- Publication number 20080273379
- Publication date Nov 6, 2008
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Application
Phase change memories with improved programming characteristics
- Publication number 20080203376
- Publication date Aug 28, 2008
- Guy C. Wicker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Chalcogenide devices exhibiting stable operation from the as-fabric...
- Publication number 20080048167
- Publication date Feb 28, 2008
- Sergey A. Kostylev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Forming a carbon layer between phase change layers of a phase chang...
- Publication number 20070297213
- Publication date Dec 27, 2007
- Intel Corporation
- Wolodymyr Czubatyj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Programming a normally single phase chalcogenide material for use a...
- Publication number 20070247899
- Publication date Oct 25, 2007
- George A. Gordon
- G11 - INFORMATION STORAGE
Information Patent Application
Shunted phase change memory
- Publication number 20070242504
- Publication date Oct 18, 2007
- Guy Wicker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase change memory with improved temperature stability
- Publication number 20070238225
- Publication date Oct 11, 2007
- Guy Wicker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Phase change memory and method therefor
- Publication number 20070155117
- Publication date Jul 5, 2007
- Guy C. Wicker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral phase change memory
- Publication number 20070096072
- Publication date May 3, 2007
- STMicroelectronics S.r. I.
- Richard Dodge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrically rewritable non-volatile memory element and method of m...
- Publication number 20070096074
- Publication date May 3, 2007
- ELPIDA MEMORY, INC.
- Isamu Asano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Chalcogenide devices and materials having reduced germanium or tell...
- Publication number 20070034851
- Publication date Feb 15, 2007
- Ovonyx, Inc.
- Sergey A. Kostylev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Chalcogenide devices incorporating chalcogenide materials having re...
- Publication number 20070034850
- Publication date Feb 15, 2007
- Ovonyx, Inc.
- Sergey Kostylev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of operating a programmable resistance memory array
- Publication number 20070014144
- Publication date Jan 18, 2007
- Guy C. Wicker
- G11 - INFORMATION STORAGE
Information Patent Application
Lateral phase change memory and method therefor
- Publication number 20060266990
- Publication date Nov 30, 2006
- Guy C. Wicker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heating phase change material
- Publication number 20060226410
- Publication date Oct 12, 2006
- Guy C. Wicker
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Phase change memory electrode with multiple thermal interfaces

Heating phase change material

Phase change memory and method therefor

Heating phase change material

Lateral phase change memory

Programmable matrix array with chalcogenide material

Memory device

Arsenic-containing variable resistance materials

Lateral phase change memory

Shunted phase change memory

Programmable resistance memory

Phase change memories with improved programming characteristics

Shunted phase change memory

Programming a normally single phase chalcogenide material for use a...

Programmable matrix array with chalcogenide material

Lateral phase change memory

Chalcogenide devices exhibiting stable operation from the as-fabric...

Die customization using programmable resistance memory elements

Forming a carbon layer between phase change layers of a phase chang...

Programmable matrix array with chalcogenide material

Electrically rewritable non-volatile memory element and method of m...

Planar segmented contact

Chalcogenide devices and materials having reduced germanium or tell...

Phase change memories with improved programming characteristics

Programmable matrix array with chalcogenide material

Method of operating a programmable resistance memory array

Programming a normally single phase chalcogenide material for use a...

Electrically programmable memory element with improved contacts

Lateral phase change memory and method therefor

Method of operating a programmable resistance memory array

Patents Applicationslast 30 patents

HEATING PHASE CHANGE MATERIAL

HEATING PHASE CHANGE MATERIAL

LATERAL PHASE CHANGE MEMORY

Shunted Phase Change Memory

Arsenic-Containing Variable Resistance Materials

LATERAL PHASE CHANGE MEMORY

Chalcogenide Devices Exhibiting Stable Operation from the As-Fabric...

Die Customization using Programmable Resistance Memory Elements

Programmable resistance memory

Programmable Matrix Array with Chalcogenide Material

Memory Device

Method for manufacturing Chalcogenide devices

Non-volatile programmable variable resistance element

Phase Change Memories With Improved Programming Characteristics

Programmable matrix array with chalcogenide material

Programming a normally single phase chalcogenide material for use a...

Phase change memories with improved programming characteristics

Chalcogenide devices exhibiting stable operation from the as-fabric...

Forming a carbon layer between phase change layers of a phase chang...

Programming a normally single phase chalcogenide material for use a...

Shunted phase change memory

Phase change memory with improved temperature stability

Phase change memory and method therefor

Lateral phase change memory

Electrically rewritable non-volatile memory element and method of m...

Chalcogenide devices and materials having reduced germanium or tell...

Chalcogenide devices incorporating chalcogenide materials having re...

Method of operating a programmable resistance memory array

Lateral phase change memory and method therefor

Heating phase change material