H. C. Tseng

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Hsinchu, TW

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Patents Grantslast 30 patents

Information Patent Grant
MOSFET device with two spacers
- Patent number 6,043,545
- Issue date Mar 28, 2000
- United Microelectronics Corp.
- H. C. Tseng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a self-aligned silicide MOSFET
- Patent number 5,920,783
- Issue date Jul 6, 1999
- United Microelectronics Corp.
- H. C. Tseng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Dummy via for reducing proximity effect and method of using the same
- Publication number 20060214298
- Publication date Sep 28, 2006
- Kun-Cheng Huang
- H01 - BASIC ELECTRIC ELEMENTS