Haibo Li

Person

Wuhan City, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Method for reading memory device and memory device
- Patent number 12,205,652
- Issue date Jan 21, 2025
- Yangtze Memory Technologies Co., Ltd.
- Xiaojiang Guo
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and programming method thereof
- Patent number 12,154,626
- Issue date Nov 26, 2024
- Yangtze Memory Technologies Co., Ltd.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and multi-pass program operation thereof
- Patent number 12,100,462
- Issue date Sep 24, 2024
- Yangtze Memory Technologies Co., Ltd.
- Chao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for programming memory device to reduce retention error
- Patent number 12,033,708
- Issue date Jul 9, 2024
- Yangtze Memory Technologies Co., Ltd.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and program operation thereof
- Patent number 11,915,761
- Issue date Feb 27, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhichao Du
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Architecture and method for NAND memory operation
- Patent number 11,901,023
- Issue date Feb 13, 2024
- Yangtze Memory Technologies Co., Ltd.
- Changhyun Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming for three-dimensional NAND memory
- Patent number 11,887,671
- Issue date Jan 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Program and read operations using different gray codes and memory d...
- Patent number 11,854,613
- Issue date Dec 26, 2023
- Yangtze Memory Technologies Co., Ltd.
- Chao Zhang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device and multi-pass program operation thereof
- Patent number 11,742,037
- Issue date Aug 29, 2023
- Yangtze Memory Technologies Co., Ltd.
- Chao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of programming memory device
- Patent number 11,705,202
- Issue date Jul 18, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhipeng Dong
- G11 - INFORMATION STORAGE
Information Patent Grant
Control method and controller of program suspending and resuming fo...
- Patent number 11,676,663
- Issue date Jun 13, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhi Chao Du
- G11 - INFORMATION STORAGE
Information Patent Grant
Negative gate stress operation in multi-pass programming and memory...
- Patent number 11,664,078
- Issue date May 30, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhipeng Dong
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and programming method thereof
- Patent number 11,615,849
- Issue date Mar 28, 2023
- Yangtze Memory Technologies Co., Ltd.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Erasing method for 3D NAND flash memory
- Patent number 11,581,044
- Issue date Feb 14, 2023
- Yangtze Memory Technologies Co., Ltd.
- Changhyun Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Negative gate stress operation in multi-pass programming and memory...
- Patent number 11,538,537
- Issue date Dec 27, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zhipeng Dong
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for programming a memory system
- Patent number 11,475,964
- Issue date Oct 18, 2022
- Yangtze Memory Technologies Co., Ltd.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Architecture and method for NAND memory operation
- Patent number 11,468,957
- Issue date Oct 11, 2022
- Yangtze Memory Technologies Co., Ltd.
- Changhyun Lee
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for programming a memory system
- Patent number 11,386,970
- Issue date Jul 12, 2022
- Yangtze Memory Technologies Co., Ltd.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Control method and controller of program suspending and resuming fo...
- Patent number 11,250,914
- Issue date Feb 15, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zhi Chao Du
- G11 - INFORMATION STORAGE
Information Patent Grant
Erasing method for 3D NAND flash memory
- Patent number 11,232,839
- Issue date Jan 25, 2022
- Yangtze Memory Technologies Co., Ltd.
- Changhyun Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of programming memory device
- Patent number 11,200,953
- Issue date Dec 14, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhipeng Dong
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and programming method thereof
- Patent number 11,139,029
- Issue date Oct 5, 2021
- Yangtze Memory Technologies Co., Ltd.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for programming a memory system
- Patent number 11,037,642
- Issue date Jun 15, 2021
- Yangtze Memory Technologies Co., Ltd.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for programming a memory system
- Patent number 10,998,062
- Issue date May 4, 2021
- Yangtze Memory Technologies Co., Ltd.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Control method and controller of program suspending and resuming fo...
- Patent number 10,978,158
- Issue date Apr 13, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhi Chao Du
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods of programming memory device
- Patent number 10,937,504
- Issue date Mar 2, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhipeng Dong
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory device and method for programming in non-volati...
- Patent number 10,811,111
- Issue date Oct 20, 2020
- Yangtze Memory Technologies Co., Ltd.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for programming in non-volatile memory device by applying mu...
- Patent number 10,796,777
- Issue date Oct 6, 2020
- Yangtze Memory Technologies Co., Ltd.
- Haibo Li
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
ARCHITECTURE AND METHOD FOR NAND MEMORY OPERATION
- Publication number 20240177787
- Publication date May 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Changhyun LEE
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING FOR THREE-DIMENSIONAL NAND MEMORY
- Publication number 20240112739
- Publication date Apr 4, 2024
- Yangtze Memory Technologies Co., Ltd.
- Haibo LI
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PROGRAMMING A MEMORY SYSTEM
- Publication number 20240006004
- Publication date Jan 4, 2024
- Yangtze Memory Technologies Co., Ltd.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND PROGRAM OPERATION THEREOF
- Publication number 20230367488
- Publication date Nov 16, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhichao Du
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE AND MULTI-PASS PROGRAM OPERATION THEREOF
- Publication number 20230335205
- Publication date Oct 19, 2023
- Yangtze Memory Technologies Co., Ltd.
- Chao Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND PROGRAMMING METHOD THEREOF
- Publication number 20230207015
- Publication date Jun 29, 2023
- Yangtze Memory Technologies Co., Ltd.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR READING MEMORY DEVICE AND MEMORY DEVICE
- Publication number 20230148206
- Publication date May 11, 2023
- Yangtze Memory Technologies Co., Ltd.
- Xiaojiang Guo
- G11 - INFORMATION STORAGE
Information Patent Application
ARCHITECTURE AND METHOD FOR NAND MEMORY OPERATION
- Publication number 20230020789
- Publication date Jan 19, 2023
- Yangtze Memory Technologies Co., Ltd.
- Changhyun LEE
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAM AND READ OPERATIONS USING DIFFERENT GRAY CODES AND MEMORY D...
- Publication number 20220319591
- Publication date Oct 6, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Chao Zhang
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PROGRAMMING FOR THREE-DIMENSIONAL NAND MEMORY
- Publication number 20220319607
- Publication date Oct 6, 2022
- Yangtze Memory Technologies Co., Ltd.
- Haibo LI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND MULTI-PASS PROGRAM OPERATION THEREOF
- Publication number 20220319617
- Publication date Oct 6, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Chao Zhang
- G11 - INFORMATION STORAGE
Information Patent Application
NEGATIVE GATE STRESS OPERATION IN MULTI-PASS PROGRAMMING AND MEMORY...
- Publication number 20220310182
- Publication date Sep 29, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zhipeng Dong
- G11 - INFORMATION STORAGE
Information Patent Application
NEGATIVE GATE STRESS OPERATION IN MULTI-PASS PROGRAMMING AND MEMORY...
- Publication number 20220310181
- Publication date Sep 29, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zhipeng Dong
- G11 - INFORMATION STORAGE
Information Patent Application
ARCHITECTURE AND METHOD FOR NAND MEMORY OPERATION
- Publication number 20220189566
- Publication date Jun 16, 2022
- Yangtze Memory Technologies Co., Ltd.
- Changhyun LEE
- G11 - INFORMATION STORAGE
Information Patent Application
CONTROL METHOD AND CONTROLLER OF PROGRAM SUSPENDING AND RESUMING FO...
- Publication number 20220139462
- Publication date May 5, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zhi Chao Du
- G11 - INFORMATION STORAGE
Information Patent Application
ERASING METHOD FOR 3D NAND FLASH MEMORY
- Publication number 20220115072
- Publication date Apr 14, 2022
- Yangtze Memory Technologies Co., Ltd.
- Changhyun LEE
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF PROGRAMMING MEMORY DEVICE
- Publication number 20220028458
- Publication date Jan 27, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zhipeng Dong
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE AND PROGRAM OPERATION THEREOF
- Publication number 20220013176
- Publication date Jan 13, 2022
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zhichao Du
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY DEVICE AND PROGRAMMING METHOD THEREOF
- Publication number 20210391014
- Publication date Dec 16, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Application
CONTROL METHOD AND CONTROLLER OF PROGRAM SUSPENDING AND RESUMING FO...
- Publication number 20210366552
- Publication date Nov 25, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zhi Chao Du
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Device and Programming Method Thereof
- Publication number 20210264982
- Publication date Aug 26, 2021
- Yangtze Memory Technologies Co., Ltd.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PROGRAMMING A MEMORY SYSTEM
- Publication number 20210264995
- Publication date Aug 26, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PROGRAMMING A MEMORY SYSTEM
- Publication number 20210183457
- Publication date Jun 17, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Application
METHODS OF PROGRAMMING MEMORY DEVICE
- Publication number 20210166765
- Publication date Jun 3, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zhipeng Dong
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PROGRAMMING A MEMORY SYSTEM
- Publication number 20200342947
- Publication date Oct 29, 2020
- Yangtze Memory Technologies Co., Ltd.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PROGRAMMING IN NON-VOLATILE MEMORY DEVICE BY APPLYING MU...
- Publication number 20200312417
- Publication date Oct 1, 2020
- Yangtze Memory Technologies Co., Ltd.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY DEVICE AND METHOD FOR PROGRAMMING IN NON-VOLATI...
- Publication number 20200312418
- Publication date Oct 1, 2020
- Yangtze Memory Technologies Co., Ltd.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PROGRAMMING A MEMORY SYSTEM
- Publication number 20200265904
- Publication date Aug 20, 2020
- Yangtze Memory Technologies Co., Ltd.
- Haibo Li
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR PROGRAMMING A MEMORY SYSTEM
- Publication number 20200185046
- Publication date Jun 11, 2020
- Yangtze Memory Technologies Co., Ltd.
- Haibo Li
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Method for reading memory device and memory device

Memory device and programming method thereof

Memory device and multi-pass program operation thereof

Method for programming memory device to reduce retention error

Memory device and program operation thereof

Architecture and method for NAND memory operation

Programming for three-dimensional NAND memory

Program and read operations using different gray codes and memory d...

Memory device and multi-pass program operation thereof

Methods of programming memory device

Control method and controller of program suspending and resuming fo...

Negative gate stress operation in multi-pass programming and memory...

Memory device and programming method thereof

Erasing method for 3D NAND flash memory

Negative gate stress operation in multi-pass programming and memory...

Method for programming a memory system

Architecture and method for NAND memory operation

Method for programming a memory system

Control method and controller of program suspending and resuming fo...

Erasing method for 3D NAND flash memory

Methods of programming memory device

Memory device and programming method thereof

Method for programming a memory system

Method for programming a memory system

Control method and controller of program suspending and resuming fo...

Methods of programming memory device

Non-volatile memory device and method for programming in non-volati...

Method for programming in non-volatile memory device by applying mu...

Patents Applicationslast 30 patents

ARCHITECTURE AND METHOD FOR NAND MEMORY OPERATION

PROGRAMMING FOR THREE-DIMENSIONAL NAND MEMORY

METHOD FOR PROGRAMMING A MEMORY SYSTEM

MEMORY DEVICE AND PROGRAM OPERATION THEREOF

MEMORY DEVICE AND MULTI-PASS PROGRAM OPERATION THEREOF

MEMORY DEVICE AND PROGRAMMING METHOD THEREOF

METHOD FOR READING MEMORY DEVICE AND MEMORY DEVICE

ARCHITECTURE AND METHOD FOR NAND MEMORY OPERATION

PROGRAM AND READ OPERATIONS USING DIFFERENT GRAY CODES AND MEMORY D...

PROGRAMMING FOR THREE-DIMENSIONAL NAND MEMORY

MEMORY DEVICE AND MULTI-PASS PROGRAM OPERATION THEREOF

NEGATIVE GATE STRESS OPERATION IN MULTI-PASS PROGRAMMING AND MEMORY...

NEGATIVE GATE STRESS OPERATION IN MULTI-PASS PROGRAMMING AND MEMORY...

ARCHITECTURE AND METHOD FOR NAND MEMORY OPERATION

CONTROL METHOD AND CONTROLLER OF PROGRAM SUSPENDING AND RESUMING FO...

ERASING METHOD FOR 3D NAND FLASH MEMORY

METHODS OF PROGRAMMING MEMORY DEVICE

MEMORY DEVICE AND PROGRAM OPERATION THEREOF

MEMORY DEVICE AND PROGRAMMING METHOD THEREOF

CONTROL METHOD AND CONTROLLER OF PROGRAM SUSPENDING AND RESUMING FO...

Memory Device and Programming Method Thereof

METHOD FOR PROGRAMMING A MEMORY SYSTEM

METHOD FOR PROGRAMMING A MEMORY SYSTEM

METHODS OF PROGRAMMING MEMORY DEVICE

METHOD FOR PROGRAMMING A MEMORY SYSTEM

METHOD FOR PROGRAMMING IN NON-VOLATILE MEMORY DEVICE BY APPLYING MU...

NON-VOLATILE MEMORY DEVICE AND METHOD FOR PROGRAMMING IN NON-VOLATI...

METHOD FOR PROGRAMMING A MEMORY SYSTEM

METHOD FOR PROGRAMMING A MEMORY SYSTEM