Haigou Huang

Person

Rexford, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gap fill void and connection structures
- Patent number 11,651,992
- Issue date May 16, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-step insulator formation in trenches to avoid seams in insula...
- Patent number 10,964,599
- Issue date Mar 30, 2021
- GLOBALFOUNDRIES U.S. INC.
- Asli Sirman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap structure
- Patent number 10,930,549
- Issue date Feb 23, 2021
- GLOBALFOUNDRIES U.S. INC.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gap fill void and connection structures
- Patent number 10,923,388
- Issue date Feb 16, 2021
- GLOBALFOUNDRIES U.S. INC.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnects with non-mandrel cuts formed by early block patterning
- Patent number 10,777,413
- Issue date Sep 15, 2020
- GLOBALFOUNDRIES Inc.
- Yuping Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chamferless interconnect vias of semiconductor devices
- Patent number 10,770,344
- Issue date Sep 8, 2020
- GLOBALFOUNDRIES Inc.
- Yuping Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor material in trenches having differe...
- Patent number 10,714,376
- Issue date Jul 14, 2020
- GLOBALFOUNDRIES Inc.
- Chih-Chiang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus, and system for reducing gate cut gouging and/or...
- Patent number 10,644,156
- Issue date May 5, 2020
- GLOBALFOUNDRIES Inc.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing finfet devices using narrow and wide gate c...
- Patent number 10,586,860
- Issue date Mar 10, 2020
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capping structure
- Patent number 10,559,470
- Issue date Feb 11, 2020
- GLOBALFOUNDRIES Inc.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus, and system for forming epitaxial formations wit...
- Patent number 10,529,831
- Issue date Jan 7, 2020
- GLOBALFOUNDRIES Inc.
- Qun Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for stringer defect reduction in a tr...
- Patent number 10,522,639
- Issue date Dec 31, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structures
- Patent number 10,510,613
- Issue date Dec 17, 2019
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming replacement gate structures on transistor devices
- Patent number 10,483,369
- Issue date Nov 19, 2019
- GLOBALFOUNDRIES Inc.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap structure
- Patent number 10,460,986
- Issue date Oct 29, 2019
- GLOBALFOUNDRIES Inc.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffused contact extension dopants in a transistor device
- Patent number 10,453,754
- Issue date Oct 22, 2019
- GLOBALFOUNDRIES Inc.
- Jianwei Peng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tone inversion method and structure for selective contact via patte...
- Patent number 10,453,751
- Issue date Oct 22, 2019
- GLOBALFOUNDRIES Inc.
- Xiaofeng Qiu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-step insulator formation in trenches to avoid seams in insula...
- Patent number 10,431,500
- Issue date Oct 1, 2019
- GLOBALFOUNDRIES Inc.
- Asli Sirman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus, and system for a semiconductor device comprisin...
- Patent number 10,418,272
- Issue date Sep 17, 2019
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for stringer defect reduction in a tr...
- Patent number 10,418,455
- Issue date Sep 17, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with reduced gate height budget
- Patent number 10,403,734
- Issue date Sep 3, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite contact etch stop layer
- Patent number 10,388,562
- Issue date Aug 20, 2019
- GLOBALFOUNDRIES Inc.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device for improving performance through gate cut last process
- Patent number 10,347,729
- Issue date Jul 9, 2019
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for providing a pre-RMG replacement m...
- Patent number 10,325,819
- Issue date Jun 18, 2019
- GLOBALFOUNDRIES Inc.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for replacement contact for a finFET...
- Patent number 10,269,654
- Issue date Apr 23, 2019
- GLOBALFOUNDRIES Inc.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming cobalt contact module and cobalt contact module f...
- Patent number 10,262,942
- Issue date Apr 16, 2019
- GLOBALFOUNDRIES Inc.
- Qiang Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement contact cuts with an encapsulated low-K dielectric
- Patent number 10,256,089
- Issue date Apr 9, 2019
- GLOBALFOUNDRIES Inc.
- Huy Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming upper source/drain regions on a vertical transis...
- Patent number 10,229,999
- Issue date Mar 12, 2019
- GLOBALFOUNDRIES Inc.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor formation with critical dimension...
- Patent number 10,217,846
- Issue date Feb 26, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect transistor having a dielectric spacer between...
- Patent number 10,211,315
- Issue date Feb 19, 2019
- GLOBALFOUNDRIES Inc.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
GAP FILL VOID AND CONNECTION STRUCTURES
- Publication number 20210134658
- Publication date May 6, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Haigou HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAP FILL VOID AND CONNECTION STRUCTURES
- Publication number 20200235002
- Publication date Jul 23, 2020
- GLOBALFOUNDRIES INC.
- Haigou HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHAMFERLESS INTERCONNECT VIAS OF SEMICONDUCTOR DEVICES
- Publication number 20200219763
- Publication date Jul 9, 2020
- GLOBALFOUNDRIES INC.
- YUPING REN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTERCONNECTS WITH NON-MANDREL CUTS FORMED BY EARLY BLOCK PATTERNING
- Publication number 20200020531
- Publication date Jan 16, 2020
- GLOBALFOUNDRIES INC.
- Yuping Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP STRUCTURE
- Publication number 20200013672
- Publication date Jan 9, 2020
- GLOBALFOUNDRIES INC.
- Jinsheng GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR MATERIAL IN TRENCHES HAVING DIFFERE...
- Publication number 20190393077
- Publication date Dec 26, 2019
- GLOBALFOUNDRIES INC.
- Chih-Chiang Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC PRODUCT COMPRISING A NOVEL INSULATING GATE SEPARATION STRUCTURE...
- Publication number 20190378914
- Publication date Dec 12, 2019
- GLOBALFOUNDRIES INC.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH REDUCED GATE HEIGHT BUDGET
- Publication number 20190371905
- Publication date Dec 5, 2019
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS, AND SYSTEM FOR A SEMICONDUCTOR DEVICE COMPRISIN...
- Publication number 20190355615
- Publication date Nov 21, 2019
- GLOBALFOUNDRIES, Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STEP INSULATOR FORMATION IN TRENCHES TO AVOID SEAMS IN INSULA...
- Publication number 20190355624
- Publication date Nov 21, 2019
- GLOBALFOUNDRIES INC.
- Asli Sirman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A METHOD OF MANUFACTURING FINFET DEVICES USING NARROW AND WIDE GATE...
- Publication number 20190341475
- Publication date Nov 7, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS AND SYSTEM FOR STRINGER DEFECT REDUCTION IN A TR...
- Publication number 20190326408
- Publication date Oct 24, 2019
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MATERIAL COMBINATIONS FOR POLISH STOPS AND GATE CAPS
- Publication number 20190326416
- Publication date Oct 24, 2019
- GLOBALFOUNDRIES INC.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-STEP INSULATOR FORMATION IN TRENCHES TO AVOID SEAMS IN INSULA...
- Publication number 20190304843
- Publication date Oct 3, 2019
- GLOBALFOUNDRIES INC.
- Asli Sirman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS, AND SYSTEM FOR REDUCING GATE CUT GOUGING AND/OR...
- Publication number 20190280114
- Publication date Sep 12, 2019
- GLOBALFOUNDRIES INC.
- Jinsheng Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAP STRUCTURE
- Publication number 20190237363
- Publication date Aug 1, 2019
- GLOBALFOUNDRIES INC.
- Jinsheng GAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURES
- Publication number 20190229019
- Publication date Jul 25, 2019
- GLOBALFOUNDRIES INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPING STRUCTURE
- Publication number 20190228976
- Publication date Jul 25, 2019
- GLOBALFOUNDRIES INC.
- Haigou HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING REPLACEMENT GATE STRUCTURES ON TRANSISTOR DEVICES
- Publication number 20190131428
- Publication date May 2, 2019
- GLOBALFOUNDRIES INC.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS AND SYSTEM FOR STRINGER DEFECT REDUCTION IN A TR...
- Publication number 20190097015
- Publication date Mar 28, 2019
- GLOBALFOUDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET TRANSISTOR WITH IMPROVED INNER SPACER
- Publication number 20190081155
- Publication date Mar 14, 2019
- GLOBALFOUNDRIES INC.
- Ruilong XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOSITE CONTACT ETCH STOP LAYER
- Publication number 20190057899
- Publication date Feb 21, 2019
- GLOBALFOUNDRIES INC.
- Haigou HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING COBALT CONTACT MODULE AND COBALT CONTACT MODULE F...
- Publication number 20190035739
- Publication date Jan 31, 2019
- GLOBALFOUNDRIES INC.
- Qiang Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Field-Effect Transistor having a Dielectric Spacer between...
- Publication number 20190027586
- Publication date Jan 24, 2019
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH REDUCED GATE HEIGHT BUDGET
- Publication number 20190027575
- Publication date Jan 24, 2019
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT CONTACT CUTS WITH AN ENCAPSULATED LOW-K DIELECTRIC
- Publication number 20180366324
- Publication date Dec 20, 2018
- GLOBALFOUNDRIES INC.
- Huy Cao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING INTEGRATED CIRCUIT STRUCTURES INCLUDING OPENING...
- Publication number 20180286965
- Publication date Oct 4, 2018
- GLOBALFOUNDRIES INC.
- Hui Zang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TONE INVERSION METHOD AND STRUCTURE FOR SELECTIVE CONTACT VIA PATTE...
- Publication number 20180261510
- Publication date Sep 13, 2018
- GLOBALFOUNDRIES INC.
- Xiaofeng QIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING UPPER SOURCE/DRAIN REGIONS ON A VERTICAL TRANSIS...
- Publication number 20180248046
- Publication date Aug 30, 2018
- GLOBALFOUNDRIES INC.
- Xusheng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PREVENTING BRIDGE FORMATION BETWEEN REPLACEMENT GATE AND SOURCE/DRA...
- Publication number 20180033870
- Publication date Feb 1, 2018
- GLOBALFOUNDRIES INC.
- Haigou Huang
- H01 - BASIC ELECTRIC ELEMENTS

Haigou Huang

Person

Patents Grantslast 30 patents

Gap fill void and connection structures

Multi-step insulator formation in trenches to avoid seams in insula...

Cap structure

Gap fill void and connection structures

Interconnects with non-mandrel cuts formed by early block patterning

Chamferless interconnect vias of semiconductor devices

Method of forming semiconductor material in trenches having differe...

Methods, apparatus, and system for reducing gate cut gouging and/or...

Method of manufacturing finfet devices using narrow and wide gate c...

Capping structure

Methods, apparatus, and system for forming epitaxial formations wit...

Methods, apparatus and system for stringer defect reduction in a tr...

Contact structures

Methods of forming replacement gate structures on transistor devices

Cap structure

Diffused contact extension dopants in a transistor device

Tone inversion method and structure for selective contact via patte...

Multi-step insulator formation in trenches to avoid seams in insula...

Methods, apparatus, and system for a semiconductor device comprisin...

Methods, apparatus and system for stringer defect reduction in a tr...

Semiconductor device with reduced gate height budget

Composite contact etch stop layer

Device for improving performance through gate cut last process

Methods, apparatus and system for providing a pre-RMG replacement m...

Methods, apparatus and system for replacement contact for a finFET...

Method of forming cobalt contact module and cobalt contact module f...

Replacement contact cuts with an encapsulated low-K dielectric

Methods of forming upper source/drain regions on a vertical transis...

Vertical field effect transistor formation with critical dimension...

Vertical field-effect transistor having a dielectric spacer between...

Patents Applicationslast 30 patents

GAP FILL VOID AND CONNECTION STRUCTURES

GAP FILL VOID AND CONNECTION STRUCTURES

CHAMFERLESS INTERCONNECT VIAS OF SEMICONDUCTOR DEVICES

INTERCONNECTS WITH NON-MANDREL CUTS FORMED BY EARLY BLOCK PATTERNING

CAP STRUCTURE

METHOD OF FORMING SEMICONDUCTOR MATERIAL IN TRENCHES HAVING DIFFERE...

IC PRODUCT COMPRISING A NOVEL INSULATING GATE SEPARATION STRUCTURE...

SEMICONDUCTOR DEVICE WITH REDUCED GATE HEIGHT BUDGET

METHODS, APPARATUS, AND SYSTEM FOR A SEMICONDUCTOR DEVICE COMPRISIN...

MULTI-STEP INSULATOR FORMATION IN TRENCHES TO AVOID SEAMS IN INSULA...

A METHOD OF MANUFACTURING FINFET DEVICES USING NARROW AND WIDE GATE...

METHODS, APPARATUS AND SYSTEM FOR STRINGER DEFECT REDUCTION IN A TR...

MATERIAL COMBINATIONS FOR POLISH STOPS AND GATE CAPS

MULTI-STEP INSULATOR FORMATION IN TRENCHES TO AVOID SEAMS IN INSULA...

METHODS, APPARATUS, AND SYSTEM FOR REDUCING GATE CUT GOUGING AND/OR...

CAP STRUCTURE

CONTACT STRUCTURES

CAPPING STRUCTURE

METHODS OF FORMING REPLACEMENT GATE STRUCTURES ON TRANSISTOR DEVICES

METHODS, APPARATUS AND SYSTEM FOR STRINGER DEFECT REDUCTION IN A TR...

NANOSHEET TRANSISTOR WITH IMPROVED INNER SPACER

COMPOSITE CONTACT ETCH STOP LAYER

METHOD OF FORMING COBALT CONTACT MODULE AND COBALT CONTACT MODULE F...

Vertical Field-Effect Transistor having a Dielectric Spacer between...

SEMICONDUCTOR DEVICE WITH REDUCED GATE HEIGHT BUDGET

REPLACEMENT CONTACT CUTS WITH AN ENCAPSULATED LOW-K DIELECTRIC

METHODS OF FORMING INTEGRATED CIRCUIT STRUCTURES INCLUDING OPENING...

TONE INVERSION METHOD AND STRUCTURE FOR SELECTIVE CONTACT VIA PATTE...

METHODS OF FORMING UPPER SOURCE/DRAIN REGIONS ON A VERTICAL TRANSIS...

PREVENTING BRIDGE FORMATION BETWEEN REPLACEMENT GATE AND SOURCE/DRA...