Haihui LUO

Person

Zhuzhou, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Cell structure of silicon carbide MOSFET device, and power semicond...
- Patent number 12,205,991
- Issue date Jan 21, 2025
- ZHUZHOU CRRC TIMES SEMICONDUCTOR CO., LTD.
- Yafei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High power density 3D semiconductor module packaging
- Patent number 12,068,298
- Issue date Aug 20, 2024
- DYNEX SEMICONDUCTOR LIMITED
- Yangang Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor and preparation method therefor
- Patent number 10,418,469
- Issue date Sep 17, 2019
- ZHUZHOU CRRC TIMES ELECTRIC CO., LTD.
- Guoyou Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse conducting IGBT device and manufacturing method therefor
- Patent number 10,319,595
- Issue date Jun 11, 2019
- ZHUZHOU CRRC TIMES ELECTRIC CO., LTD.
- Haihui Luo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REVERSE-CONDUCTING IGBT CHIP
- Publication number 20240038878
- Publication date Feb 1, 2024
- ZHUZHOU CRRC TIMES SEMICONDUCTOR CO., LTD.
- Liheng Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CELL STRUCTURE OF SILICON CARBIDE MOSFET DEVICE, AND POWER SEMICOND...
- Publication number 20230006044
- Publication date Jan 5, 2023
- ZHUZHOU CRRC TIMES SEMICONDUCTOR CO., LTD.
- Yafei Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CELLULAR STRUCTURE OF SILICON CARBIDE MOSFET DEVICE, AND SILICON CA...
- Publication number 20220406896
- Publication date Dec 22, 2022
- ZHUZHOU CRRC TIMES SEMICONDUCTOR CO., LTD.
- Xiaoping Dai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH POWER DENSITY 3D SEMICONDUCTOR MODULE PACKAGING
- Publication number 20220352137
- Publication date Nov 3, 2022
- Dynex Semiconductor Limited
- Yangang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REVERSE CONDUCTING IGBT DEVICE AND MANUFACTURING METHOD THEREFOR
- Publication number 20180269062
- Publication date Sep 20, 2018
- ZHUZHOU CRRC TIMES ELECTRIC CO., LTD.
- Haihui LUO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR AND PREPARATION METHOD THEREFOR
- Publication number 20180190805
- Publication date Jul 5, 2018
- ZHUZHOU CRRC TIMES ELECTRIC CO., LTD.
- Guoyou LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH GATE IGBT
- Publication number 20180151710
- Publication date May 31, 2018
- ZHUZHOU CCR TIMES ELECTRIC CO., LTD.
- Guoyou LIU
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Cell structure of silicon carbide MOSFET device, and power semicond...

High power density 3D semiconductor module packaging

Insulated gate bipolar transistor and preparation method therefor

Reverse conducting IGBT device and manufacturing method therefor

Patents Applicationslast 30 patents

REVERSE-CONDUCTING IGBT CHIP

CELL STRUCTURE OF SILICON CARBIDE MOSFET DEVICE, AND POWER SEMICOND...

CELLULAR STRUCTURE OF SILICON CARBIDE MOSFET DEVICE, AND SILICON CA...

HIGH POWER DENSITY 3D SEMICONDUCTOR MODULE PACKAGING

REVERSE CONDUCTING IGBT DEVICE AND MANUFACTURING METHOD THEREFOR

INSULATED GATE BIPOLAR TRANSISTOR AND PREPARATION METHOD THEREFOR

TRENCH GATE IGBT