Haiting Wang

Person

Clifton Park, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
High-voltage semiconductor device structures
- Patent number 12,205,949
- Issue date Jan 21, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Zhenyu Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with vertical nanowire in channel region an...
- Patent number 12,170,315
- Issue date Dec 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ali Razavieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor
- Patent number 12,159,926
- Issue date Dec 3, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single fin structures
- Patent number 12,107,154
- Issue date Oct 1, 2024
- GLOBALFOUNDRIES Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral heterojunction bipolar transistor with emitter and/or colle...
- Patent number 11,990,535
- Issue date May 21, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Alexander M. Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based lateral bipolar junction transistor with reduced base res...
- Patent number 11,967,637
- Issue date Apr 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ali Razavieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor structure with base layer of varying hor...
- Patent number 11,908,898
- Issue date Feb 20, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices having late-formed isolation structures
- Patent number 11,908,857
- Issue date Feb 20, 2024
- GLOBALFOUNDRIES U.S. INC.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate structures
- Patent number 11,908,917
- Issue date Feb 20, 2024
- GLOBALFOUNDRIES Inc.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor structure with inner and outer spacers a...
- Patent number 11,888,050
- Issue date Jan 30, 2024
- GLOBALFOUNDRIES U.S. Inc.
- John L. Lemon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor
- Patent number 11,843,034
- Issue date Dec 12, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor
- Patent number 11,810,969
- Issue date Nov 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device comprising a top via electrode and methods of making...
- Patent number 11,812,670
- Issue date Nov 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Yanping Shen
Information Patent Grant
Top electrode for a memory device and methods of making such a memo...
- Patent number 11,785,860
- Issue date Oct 10, 2023
- GLOBALFOUNDRIES U.S. INC.
- Sipeng Gu
Information Patent Grant
Bipolar junction transistors including a stress liner
- Patent number 11,721,722
- Issue date Aug 8, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-self-aligned lateral bipolar junction transistors
- Patent number 11,710,771
- Issue date Jul 25, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Alexander Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single fin structures
- Patent number 11,705,508
- Issue date Jul 18, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistors having an emitter extension an...
- Patent number 11,652,142
- Issue date May 16, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Mankyu Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrical isolation structure using reverse dopant implantation fr...
- Patent number 11,646,361
- Issue date May 9, 2023
- GLOBALFOUNDRIES U.S. INC.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with separately-formed source and drain
- Patent number 11,563,085
- Issue date Jan 24, 2023
- GLOBALFOUNDRIES U.S. INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single diffusion breaks including stacked dielectric layers
- Patent number 11,545,574
- Issue date Jan 3, 2023
- GLOBALFOUNDRIES U.S. INC.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device having sidewall spacers contacting lower surfaces...
- Patent number 11,502,200
- Issue date Nov 15, 2022
- GLOBALFOUNDRIES U.S. INC.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor comprising an air gap positioned adjacent a gate electrode
- Patent number 11,456,382
- Issue date Sep 27, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Laertis Economikos
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device and methods of making such a memory device
- Patent number 11,437,568
- Issue date Sep 6, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a replacement gate structure for a transistor de...
- Patent number 11,437,490
- Issue date Sep 6, 2022
- GLOBALFOUNDRIES U.S. INC.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming transistor devices comprising a single semicondu...
- Patent number 11,349,030
- Issue date May 31, 2022
- GLOBALFOUNDRIES U.S. INC.
- Jiehui Shu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with asymmetric gate structure and method
- Patent number 11,342,453
- Issue date May 24, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistor device and method of making suc...
- Patent number 11,264,470
- Issue date Mar 1, 2022
- GLOBALFOUNDRIES U.S. INC.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Active and dummy fin structures
- Patent number 11,264,504
- Issue date Mar 1, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Via structures for use in semiconductor devices
- Patent number 11,222,844
- Issue date Jan 11, 2022
- GLOBALFOUNDRIES U.S. INC.
- Jun Lian
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEVICE WITH VERTICAL NANOWIRE CHANNEL REGION
- Publication number 20250022915
- Publication date Jan 16, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Ali RAZAVIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAPAROUND GATE STRUCTURE
- Publication number 20240395932
- Publication date Nov 28, 2024
- GLOBALFOUNDRIES U.S. Inc.
- John L. LEMON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR
- Publication number 20240021713
- Publication date Jan 18, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-CHANNEL REPLACEMENT METAL GATE DEVICE
- Publication number 20230395715
- Publication date Dec 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Haiting WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE FIN STRUCTURES
- Publication number 20230299181
- Publication date Sep 21, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Haiting WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH MULTIPLE SILICIDE LAYERS
- Publication number 20230261088
- Publication date Aug 17, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN ON SILICON ON INSULATOR AND INTEGRATION SCHEMES
- Publication number 20230238452
- Publication date Jul 27, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATION HAVING THREE PORTIONS WITH DIFFERENT MATERIALS, AN...
- Publication number 20230238428
- Publication date Jul 27, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Rong-Ting Liou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH VERTICAL NANOWIRE CHANNEL REGION
- Publication number 20230215917
- Publication date Jul 6, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Ali RAZAVIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON GERMANIUM FINS AND INTEGRATION METHODS
- Publication number 20230197849
- Publication date Jun 22, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Hong Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR JUNCTION TRANSISTORS HAVING AN EMITTER EXTENSION AN...
- Publication number 20230092435
- Publication date Mar 23, 2023
- GLOBALFOUNDRIES U.S. Inc.
- MANKYU YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH INNER AND OUTER SPACERS A...
- Publication number 20230083044
- Publication date Mar 16, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Alexander M. Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE COMPRISING A TOP VIA ELECTRODE AND METHODS OF MAKING...
- Publication number 20230078730
- Publication date Mar 16, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS WITH A NANOSHEET INTRINSIC BASE
- Publication number 20230071998
- Publication date Mar 9, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Haiting WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR
- Publication number 20230061219
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-BASED LATERAL BIPOLAR JUNCTION TRANSISTOR WITH REDUCED BASE RES...
- Publication number 20230061156
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Ali Razavieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR
- Publication number 20230062747
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH BASE LAYER OF VARYING HOR...
- Publication number 20230067523
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-SELF-ALIGNED LATERAL BIPOLAR JUNCTION TRANSISTORS
- Publication number 20230069207
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Alexander Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIPOLAR JUNCTION TRANSISTORS INCLUDING A STRESS LINER
- Publication number 20230063900
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Man Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL HETEROJUNCTION BIPOLAR TRANSISTOR WITH EMITTER AND/OR COLLE...
- Publication number 20230065924
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Alexander M. Derrickson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRICAL ISOLATION STRUCTURE USING REVERSE DOPANT IMPLANTATION FR...
- Publication number 20220285523
- Publication date Sep 8, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR JUNCTION TRANSISTOR DEVICE AND METHOD OF MAKING SUC...
- Publication number 20220199810
- Publication date Jun 23, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH ASYMMETRIC GATE STRUCTURE AND METHOD
- Publication number 20220059691
- Publication date Feb 24, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE DIFFUSION BREAKS INCLUDING STACKED DIELECTRIC LAYERS
- Publication number 20220052193
- Publication date Feb 17, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF PROTECTING SEMICONDUCTOR MATERIALS IN THE ACTIVE REGION...
- Publication number 20210399126
- Publication date Dec 23, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Sipeng Gu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIA STRUCTURES FOR USE IN SEMICONDUCTOR DEVICES
- Publication number 20210391250
- Publication date Dec 16, 2021
- GLOBALFOUNDRIES U.S. Inc.
- JUN LIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES HAVING LATE-FORMED ISOLATION STRUCTURES
- Publication number 20210391323
- Publication date Dec 16, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Yanping Shen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STRUCTURES
- Publication number 20210376106
- Publication date Dec 2, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Jiehui SHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE FIN STRUCTURES
- Publication number 20210367060
- Publication date Nov 25, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Haiting WANG
- H01 - BASIC ELECTRIC ELEMENTS

Haiting Wang

Person

Patents Grantslast 30 patents

High-voltage semiconductor device structures

Field effect transistor with vertical nanowire in channel region an...

Lateral bipolar transistor

Single fin structures

Lateral heterojunction bipolar transistor with emitter and/or colle...

Fin-based lateral bipolar junction transistor with reduced base res...

Lateral bipolar transistor structure with base layer of varying hor...

Semiconductor devices having late-formed isolation structures

Gate structures

Lateral bipolar transistor structure with inner and outer spacers a...

Lateral bipolar transistor

Lateral bipolar transistor

Memory device comprising a top via electrode and methods of making...

Top electrode for a memory device and methods of making such a memo...

Bipolar junction transistors including a stress liner

Non-self-aligned lateral bipolar junction transistors

Single fin structures

Lateral bipolar junction transistors having an emitter extension an...

Electrical isolation structure using reverse dopant implantation fr...

Transistors with separately-formed source and drain

Single diffusion breaks including stacked dielectric layers

Transistor device having sidewall spacers contacting lower surfaces...

Transistor comprising an air gap positioned adjacent a gate electrode

Memory device and methods of making such a memory device

Methods of forming a replacement gate structure for a transistor de...

Methods of forming transistor devices comprising a single semicondu...

Field effect transistor with asymmetric gate structure and method

Lateral bipolar junction transistor device and method of making suc...

Active and dummy fin structures

Via structures for use in semiconductor devices

Patents Applicationslast 30 patents

DEVICE WITH VERTICAL NANOWIRE CHANNEL REGION

WRAPAROUND GATE STRUCTURE

LATERAL BIPOLAR TRANSISTOR

MULTI-CHANNEL REPLACEMENT METAL GATE DEVICE

SINGLE FIN STRUCTURES

TRANSISTORS WITH MULTIPLE SILICIDE LAYERS

FIN ON SILICON ON INSULATOR AND INTEGRATION SCHEMES

TRENCH ISOLATION HAVING THREE PORTIONS WITH DIFFERENT MATERIALS, AN...

DEVICE WITH VERTICAL NANOWIRE CHANNEL REGION

SILICON GERMANIUM FINS AND INTEGRATION METHODS

LATERAL BIPOLAR JUNCTION TRANSISTORS HAVING AN EMITTER EXTENSION AN...

LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH INNER AND OUTER SPACERS A...

MEMORY DEVICE COMPRISING A TOP VIA ELECTRODE AND METHODS OF MAKING...

BIPOLAR JUNCTION TRANSISTORS WITH A NANOSHEET INTRINSIC BASE

LATERAL BIPOLAR TRANSISTOR

FIN-BASED LATERAL BIPOLAR JUNCTION TRANSISTOR WITH REDUCED BASE RES...

LATERAL BIPOLAR TRANSISTOR

LATERAL BIPOLAR TRANSISTOR STRUCTURE WITH BASE LAYER OF VARYING HOR...

NON-SELF-ALIGNED LATERAL BIPOLAR JUNCTION TRANSISTORS

BIPOLAR JUNCTION TRANSISTORS INCLUDING A STRESS LINER

LATERAL HETEROJUNCTION BIPOLAR TRANSISTOR WITH EMITTER AND/OR COLLE...

ELECTRICAL ISOLATION STRUCTURE USING REVERSE DOPANT IMPLANTATION FR...

LATERAL BIPOLAR JUNCTION TRANSISTOR DEVICE AND METHOD OF MAKING SUC...

FIELD EFFECT TRANSISTOR WITH ASYMMETRIC GATE STRUCTURE AND METHOD

SINGLE DIFFUSION BREAKS INCLUDING STACKED DIELECTRIC LAYERS

METHODS OF PROTECTING SEMICONDUCTOR MATERIALS IN THE ACTIVE REGION...

VIA STRUCTURES FOR USE IN SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICES HAVING LATE-FORMED ISOLATION STRUCTURES

GATE STRUCTURES

SINGLE FIN STRUCTURES