Haizhou Yin

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device structure and method for fabricating the same
- Patent number 10,269,919
- Issue date Apr 23, 2019
- Institute of Microelectronics, Chinese Academy of Sciences
- Huicai Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET and method for manufacturing the same
- Patent number 10,096,717
- Issue date Oct 9, 2018
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for manufacturing the same
- Patent number 10,008,602
- Issue date Jun 26, 2018
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing fin field effect transistor
- Patent number 9,853,153
- Issue date Dec 26, 2017
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quasi-nanowire transistor and method of manufacturing the same
- Patent number 9,716,175
- Issue date Jul 25, 2017
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for fabricating the same
- Patent number 9,711,612
- Issue date Jul 18, 2017
- Institute of Microelectronics, Chinese Academy of Sciences
- Huicai Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing MOSFET
- Patent number 9,691,878
- Issue date Jun 27, 2017
- Institute of Microelectronics, Chinese Academy of Science
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing the same
- Patent number 9,691,899
- Issue date Jun 27, 2017
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET structure and manufacturing method thereof
- Patent number 9,653,550
- Issue date May 16, 2017
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetrical FinFET structure and method of manufacturing same
- Patent number 9,640,660
- Issue date May 2, 2017
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor devices
- Patent number 9,614,050
- Issue date Apr 4, 2017
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET structure and method for manufacturing same
- Patent number 9,608,064
- Issue date Mar 28, 2017
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing the same
- Patent number 9,583,622
- Issue date Feb 28, 2017
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing finFET
- Patent number 9,577,074
- Issue date Feb 21, 2017
- Institute of Microelectronics, Chinese Academy of Sciences
- Yunfei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 9,576,802
- Issue date Feb 21, 2017
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FDSOI semiconductor structure and method for manufacturing the same
- Patent number 9,548,317
- Issue date Jan 17, 2017
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolation structure, method for manufacturing the same, and semicon...
- Patent number 9,543,188
- Issue date Jan 10, 2017
- INSTITUTE OF MICROELECTONICS, CHINESE ACADEMY OF SCIENCES
- Zhijiong Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 9,530,861
- Issue date Dec 27, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET and method of manufacturing same
- Patent number 9,515,169
- Issue date Dec 6, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET structure and manufacturing method thereof
- Patent number 9,496,342
- Issue date Nov 15, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having fins of different heights and method fo...
- Patent number 9,496,178
- Issue date Nov 15, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing the same
- Patent number 9,401,425
- Issue date Jul 26, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing the same
- Patent number 9,373,722
- Issue date Jun 21, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancing MOSFET performance with corner stresses of STI
- Patent number 9,356,025
- Issue date May 31, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for manufacturing the same
- Patent number 9,349,867
- Issue date May 24, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing fin structure of finFET
- Patent number 9,343,530
- Issue date May 17, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solar cell unit and method for manufacturing the same
- Patent number 9,343,602
- Issue date May 17, 2016
- Zhijiong Luo
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method for manufacturing MOSFET
- Patent number 9,324,835
- Issue date Apr 26, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structure and method for manufacturing the same
- Patent number 9,293,377
- Issue date Mar 22, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Huicai Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure and method for manufacturing the same
- Patent number 9,263,581
- Issue date Feb 16, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FABRICATING THE SAME
- Publication number 20170288037
- Publication date Oct 5, 2017
- Institute of Microelectronics, Chinese Academy of Sciences
- Huicai Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Solar Cell Structure and Method for Manufacturing the Same
- Publication number 20160343896
- Publication date Nov 24, 2016
- Sunovel Suzhou Technologies Ltd.
- Haizhou YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING FINFET
- Publication number 20160276467
- Publication date Sep 22, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Yunfei Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20160204199
- Publication date Jul 14, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET STRUCTURE AND METHOD FOR MANUFACTURING SAME
- Publication number 20160181363
- Publication date Jun 23, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20160172495
- Publication date Jun 16, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET STRUCTURE AND MANUFACTURING METHOD THEREOF
- Publication number 20160172446
- Publication date Jun 16, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET AND METHOD OF MANUFACTURING SAME
- Publication number 20160163832
- Publication date Jun 9, 2016
- Institute of Microelectronics,Chiness Academy of Sciences
- Haizhou YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET STRUCTURE AND METHOD OF MANUFACTURING SAME
- Publication number 20160163825
- Publication date Jun 9, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC ULTRATHIN SOI MOS TRANSISTOR STRUCTURE AND METHOD OF MAN...
- Publication number 20160155844
- Publication date Jun 2, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRICAL FINFET STRUCTURE AND METHOD OF MANUFACTURING SAME
- Publication number 20160149027
- Publication date May 26, 2016
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-FET STRUCTURE AND METHOD OF MANUFACTURING SAME
- Publication number 20160133696
- Publication date May 12, 2016
- Institute of Microlectronics, Chinese Academy of Sciences
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING MOSFET
- Publication number 20150380297
- Publication date Dec 31, 2015
- The Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20150380411
- Publication date Dec 31, 2015
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20150340456
- Publication date Nov 26, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou YIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING MOSFET
- Publication number 20150295068
- Publication date Oct 15, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME
- Publication number 20150287828
- Publication date Oct 8, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20150287808
- Publication date Oct 8, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20150279993
- Publication date Oct 1, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING FIN FIELD EFFECT TRANSISTOR
- Publication number 20150279992
- Publication date Oct 1, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING FIN STRUCTURE OF FINFET
- Publication number 20150270341
- Publication date Sep 24, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20150270399
- Publication date Sep 24, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME
- Publication number 20150255609
- Publication date Sep 10, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING MOSFET
- Publication number 20150255577
- Publication date Sep 10, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
QUASI-NANOWIRE TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20150255594
- Publication date Sep 10, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Huilong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE
- Publication number 20150255289
- Publication date Sep 10, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE
- Publication number 20150243764
- Publication date Aug 27, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing Semiconductor Device
- Publication number 20150235854
- Publication date Aug 20, 2015
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SHALLOW TRENCH ISOLATION
- Publication number 20150214097
- Publication date Jul 30, 2015
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES
- Publication number 20150200269
- Publication date Jul 16, 2015
- Institute of Microelectronics, Chinese Academy of Sciences
- Haizhou Yin
- H01 - BASIC ELECTRIC ELEMENTS

Haizhou Yin

Person

Patents Grantslast 30 patents

Semiconductor device structure and method for fabricating the same

MOSFET and method for manufacturing the same

Semiconductor devices and methods for manufacturing the same

Method of manufacturing fin field effect transistor

Quasi-nanowire transistor and method of manufacturing the same

Semiconductor device structure and method for fabricating the same

Method of manufacturing MOSFET

Semiconductor structure and method for manufacturing the same

MOSFET structure and manufacturing method thereof

Asymmetrical FinFET structure and method of manufacturing same

Method for manufacturing semiconductor devices

MOSFET structure and method for manufacturing same

Semiconductor structure and method for manufacturing the same

Method for manufacturing finFET

Semiconductor device and method for manufacturing the same

FDSOI semiconductor structure and method for manufacturing the same

Isolation structure, method for manufacturing the same, and semicon...

Method for manufacturing semiconductor device

FinFET and method of manufacturing same

MOSFET structure and manufacturing method thereof

Semiconductor device having fins of different heights and method fo...

Semiconductor structure and method for manufacturing the same

Semiconductor structure and method for manufacturing the same

Enhancing MOSFET performance with corner stresses of STI

Semiconductor devices and methods for manufacturing the same

Method for manufacturing fin structure of finFET

Solar cell unit and method for manufacturing the same

Method for manufacturing MOSFET

Semiconductor device structure and method for manufacturing the same

Semiconductor structure and method for manufacturing the same

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FABRICATING THE SAME

Solar Cell Structure and Method for Manufacturing the Same

METHOD FOR MANUFACTURING FINFET

MOSFET STRUCTURE AND MANUFACTURING METHOD THEREOF

MOSFET STRUCTURE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

MOSFET STRUCTURE AND MANUFACTURING METHOD THEREOF

FINFET AND METHOD OF MANUFACTURING SAME

MOSFET STRUCTURE AND METHOD OF MANUFACTURING SAME

ASYMMETRIC ULTRATHIN SOI MOS TRANSISTOR STRUCTURE AND METHOD OF MAN...

ASYMMETRICAL FINFET STRUCTURE AND METHOD OF MANUFACTURING SAME

FIN-FET STRUCTURE AND METHOD OF MANUFACTURING SAME

METHOD FOR MANUFACTURING MOSFET

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

METHOD OF MANUFACTURING MOSFET

SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

METHOD OF MANUFACTURING FIN FIELD EFFECT TRANSISTOR

METHOD FOR MANUFACTURING FIN STRUCTURE OF FINFET

SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICES AND METHODS FOR MANUFACTURING THE SAME

METHOD FOR MANUFACTURING MOSFET

QUASI-NANOWIRE TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE

METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE

Method for Manufacturing Semiconductor Device

METHOD FOR MANUFACTURING SHALLOW TRENCH ISOLATION

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES