Hans-Oliver Joachim

Person

Zushi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Reliable ferro fuse cell
- Patent number 7,102,908
- Issue date Sep 5, 2006
- Infineon Technologies AG
- Roehr Thomas
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cell signal window testing apparatus
- Patent number 6,999,887
- Issue date Feb 14, 2006
- Infineon Technologies AG
- Norbert Rehm
- G11 - INFORMATION STORAGE
Information Patent Grant
Increasing the read signal in ferroelectric memories
- Patent number 6,972,983
- Issue date Dec 6, 2005
- Infineon Technologies Aktiengesellschaft
- Thomas Roehr
- G11 - INFORMATION STORAGE
Information Patent Grant
Hybrid fuses for redundancy
- Patent number 6,906,969
- Issue date Jun 14, 2005
- Infineon Technologies Aktiengesellschaft
- Thomas Roehr
- G11 - INFORMATION STORAGE
Information Patent Grant
Sensing of memory integrated circuits
- Patent number 6,903,959
- Issue date Jun 7, 2005
- Infineon Technologies Aktiengesellschaft
- Thomas Roehr
- G11 - INFORMATION STORAGE
Information Patent Grant
Sensing test circuit
- Patent number 6,885,597
- Issue date Apr 26, 2005
- Infineon Technologies Aktiengesellschaft
- Thomas Roehr
- G11 - INFORMATION STORAGE
Information Patent Grant
2T2C signal margin test mode using a defined charge exchange betwee...
- Patent number 6,876,590
- Issue date Apr 5, 2005
- Infineon Technologies, AG
- Hans-Oliver Joachim
- G11 - INFORMATION STORAGE
Information Patent Grant
Redundancy in series grouped memory architecture
- Patent number 6,856,560
- Issue date Feb 15, 2005
- Infineon Technologies Aktiengesellschaft
- Norbert Rehm
- G11 - INFORMATION STORAGE
Information Patent Grant
2T2C signal margin test mode using a defined charge and discharge o...
- Patent number 6,826,099
- Issue date Nov 30, 2004
- Infineon Technologies AG
- Hans-Oliver Joachim
- G11 - INFORMATION STORAGE
Information Patent Grant
FeRAM memory device
- Patent number 6,807,084
- Issue date Oct 19, 2004
- Infineon Technologies AG
- Joerg Wohlfahrt
- G11 - INFORMATION STORAGE
Information Patent Grant
Historical information storage for integrated circuits
- Patent number 6,707,699
- Issue date Mar 16, 2004
- Infineon Technologies Aktiengesellschaft
- Michael Klaus Jacob
- G11 - INFORMATION STORAGE
Information Patent Grant
Reference voltage generation for memory circuits
- Patent number 6,687,150
- Issue date Feb 3, 2004
- Infineon Technologies Aktiengesellschaft
- Hans-Oliver Joachim
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Signal margin test mode for FeRAM with ferroelectric reference capa...
- Publication number 20050063213
- Publication date Mar 24, 2005
- Michael Jacob
- G11 - INFORMATION STORAGE
Information Patent Application
Reference circuit implemented to reduce the degradation of referenc...
- Publication number 20050063212
- Publication date Mar 24, 2005
- Michael Jacob
- G11 - INFORMATION STORAGE
Information Patent Application
Reliable ferro fuse cell
- Publication number 20050047189
- Publication date Mar 3, 2005
- Roehr Thomas
- G11 - INFORMATION STORAGE
Information Patent Application
High density flash memory with high speed cache data interface
- Publication number 20050050261
- Publication date Mar 3, 2005
- Thomas Roehr
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Memory cell signal window testing apparatus
- Publication number 20050033541
- Publication date Feb 10, 2005
- Norbert Rehm
- G11 - INFORMATION STORAGE
Information Patent Application
FERAM MEMORY DEVICE
- Publication number 20040208043
- Publication date Oct 21, 2004
- Joerg Wohlfahrt
- G11 - INFORMATION STORAGE
Information Patent Application
2T2C Signal margin test mode using a defined charge and discharge o...
- Publication number 20040095819
- Publication date May 20, 2004
- Hans-Oliver Joachim
- G11 - INFORMATION STORAGE
Information Patent Application
2T2C signal margin test mode using a defined charge exchange betwee...
- Publication number 20040095821
- Publication date May 20, 2004
- Hans-Oliver Joachim
- G11 - INFORMATION STORAGE
Information Patent Application
2T2C signal margin test mode using different pre-charge levels for...
- Publication number 20040095799
- Publication date May 20, 2004
- Michael Jacob
- G11 - INFORMATION STORAGE
Information Patent Application
Increasing the read signal in ferroelectric memories
- Publication number 20040076031
- Publication date Apr 22, 2004
- Thomas Roehr
- G11 - INFORMATION STORAGE
Information Patent Application
HISTORICAL INFORMATION STORAGE FOR INTEGRATED CIRCUITS
- Publication number 20040057273
- Publication date Mar 25, 2004
- Michael Klaus Jacob
- G11 - INFORMATION STORAGE
Information Patent Application
Hybrid fuses for redundancy
- Publication number 20040057293
- Publication date Mar 25, 2004
- Thomas Roehr
- G11 - INFORMATION STORAGE
Information Patent Application
SENSING OF MEMORY INTEGRATED CIRCUITS
- Publication number 20040057275
- Publication date Mar 25, 2004
- Thomas Roehr
- G11 - INFORMATION STORAGE
Information Patent Application
Sensing test circuit
- Publication number 20040047171
- Publication date Mar 11, 2004
- Thomas Roehr
- G11 - INFORMATION STORAGE
Information Patent Application
Redundancy in chained memory architectures
- Publication number 20030202386
- Publication date Oct 30, 2003
- Norbert Rehm
- G11 - INFORMATION STORAGE

Hans-Oliver Joachim

Person

Patents Grantslast 30 patents

Reliable ferro fuse cell

Memory cell signal window testing apparatus

Increasing the read signal in ferroelectric memories

Hybrid fuses for redundancy

Sensing of memory integrated circuits

Sensing test circuit

2T2C signal margin test mode using a defined charge exchange betwee...

Redundancy in series grouped memory architecture

2T2C signal margin test mode using a defined charge and discharge o...

FeRAM memory device

Historical information storage for integrated circuits

Reference voltage generation for memory circuits

Patents Applicationslast 30 patents

Signal margin test mode for FeRAM with ferroelectric reference capa...

Reference circuit implemented to reduce the degradation of referenc...

Reliable ferro fuse cell

High density flash memory with high speed cache data interface

Memory cell signal window testing apparatus

FERAM MEMORY DEVICE

2T2C Signal margin test mode using a defined charge and discharge o...

2T2C signal margin test mode using a defined charge exchange betwee...

2T2C signal margin test mode using different pre-charge levels for...

Increasing the read signal in ferroelectric memories

HISTORICAL INFORMATION STORAGE FOR INTEGRATED CIRCUITS

Hybrid fuses for redundancy

SENSING OF MEMORY INTEGRATED CIRCUITS

Sensing test circuit

Redundancy in chained memory architectures