Hans S. Rupprecht

Person

Yorktown Heights, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
High temperature stable ohmic contact to gallium arsenide
- Patent number 4,593,307
- Issue date Jun 3, 1986
- International Business Machines Corporation
- Hans S. Rupprecht
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure of an improved bipolar transistor
- Patent number T106101
- Issue date Dec 3, 1985
- Joseph R. Cavaliere
- 357 -
Information Patent Grant
Complementary transistor structure and method for manufacture
- Patent number 4,485,552
- Issue date Dec 4, 1984
- International Business Machines Corporation
- Ingrid E. Magdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of activating implanted impurities in broad area compound se...
- Patent number 4,472,206
- Issue date Sep 18, 1984
- International Business Machines Corporation
- Rodney T. Hodgson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making emitter regions by implantation through a non-mono...
- Patent number 4,452,645
- Issue date Jun 5, 1984
- International Business Machines Corporation
- Wei-Kan Chu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned process for fabricating gallium arsenide metal-semicon...
- Patent number 4,389,768
- Issue date Jun 28, 1983
- International Business Machines Corporation
- Alan B. Fowler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor ballistic transport device
- Patent number 4,366,493
- Issue date Dec 28, 1982
- International Business Machines Corporation
- Norman Braslau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary transistor structure
- Patent number 4,357,622
- Issue date Nov 2, 1982
- International Business Machines Corporation
- Ingrid E. Magdo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating a bipolar transistor
- Patent number 4,338,138
- Issue date Jul 6, 1982
- International Business Machines Corporation
- Joseph R. Cavaliere
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating a self-aligned micrometer bipolar transisto...
- Patent number 4,333,227
- Issue date Jun 8, 1982
- International Business Machines Corporation
- Cheng T. Horng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Annealing of ion implanted III-V compounds in the presence of anoth...
- Patent number 4,312,681
- Issue date Jan 26, 1982
- International Business Machines Corporation
- Hans S. Rupprecht
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned micrometer bipolar transistor device and process
- Patent number 4,303,933
- Issue date Dec 1, 1981
- International Business Machines Corporation
- Cheng T. Horng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing integrated circuit devices by ion implantation
- Patent number 4,118,250
- Issue date Oct 3, 1978
- International Business Machines Corporation
- Cheng Tzong Horng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of high current ion implantation and charge reduction by sim...
- Patent number 4,076,558
- Issue date Feb 28, 1978
- International Business Machines Corporation
- Hans Stephen Rupprecht
- H01 - BASIC ELECTRIC ELEMENTS

Hans S. Rupprecht

Person

Patents Grantslast 30 patents

High temperature stable ohmic contact to gallium arsenide

Structure of an improved bipolar transistor

Complementary transistor structure and method for manufacture

Method of activating implanted impurities in broad area compound se...

Method of making emitter regions by implantation through a non-mono...

Self-aligned process for fabricating gallium arsenide metal-semicon...

Semiconductor ballistic transport device

Complementary transistor structure

Process for fabricating a bipolar transistor

Process for fabricating a self-aligned micrometer bipolar transisto...

Annealing of ion implanted III-V compounds in the presence of anoth...

Self-aligned micrometer bipolar transistor device and process

Process for producing integrated circuit devices by ion implantation

Method of high current ion implantation and charge reduction by sim...