Hans-Willi Meul

Person

Bruckmuehl, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Method for manufacturing a laterally limited, single-crystal region...
- Patent number 5,498,567
- Issue date Mar 12, 1996
- Siemens Aktiengesellschaft
- Helmut Klose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a laterally limited, single-crystal region...
- Patent number 5,422,303
- Issue date Jun 6, 1995
- Siemens Aktiengesellschaft
- Helmut Klose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor with reduced base/collector capacitance
- Patent number 5,402,002
- Issue date Mar 28, 1995
- Siemens Aktiengesellschaft
- Thomas Meister
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a laterally limited, single-crystal region...
- Patent number 5,326,718
- Issue date Jul 5, 1994
- Siemens Aktiengesellschaft
- Helmut Klose
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing an electrically conductive tip composed of...
- Patent number 5,188,977
- Issue date Feb 23, 1993
- Siemens Aktiengesellschaft
- Reinhard Stengl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS-compatible bipolar transistor with reduced collector/substrate...
- Patent number 5,177,582
- Issue date Jan 5, 1993
- Siemens Aktiengesellschaft
- Thomas Meister
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a fully self-adjusted bipolar transistor
- Patent number 4,829,015
- Issue date May 9, 1989
- Siemens Aktiengesellschaft
- Hans-Christian Schaber
- H01 - BASIC ELECTRIC ELEMENTS

Hans-Willi Meul

Person

Patents Grantslast 30 patents

Method for manufacturing a laterally limited, single-crystal region...

Method for manufacturing a laterally limited, single-crystal region...

Bipolar transistor with reduced base/collector capacitance

Method for manufacturing a laterally limited, single-crystal region...

Method for manufacturing an electrically conductive tip composed of...

CMOS-compatible bipolar transistor with reduced collector/substrate...

Method for manufacturing a fully self-adjusted bipolar transistor