Heemyong Park

Person

LaGrangeville, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of building a CMOS structure on thin SOI with source/drain e...
- Patent number 7,009,258
- Issue date Mar 7, 2006
- International Business Machines Corporation
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS device on ultrathin SOI with a deposited raised source/drain,...
- Patent number 6,891,228
- Issue date May 10, 2005
- International Business Machines Corporation
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS device on ultrathin SOI with a deposited raised source/drain,...
- Patent number 6,828,630
- Issue date Dec 7, 2004
- International Business Machines Corporation
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS structure with maximized polysilicon gate activation and a met...
- Patent number 6,808,974
- Issue date Oct 26, 2004
- International Business Machines Corporation
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of building a CMOS structure on thin SOI with source/drain e...
- Patent number 6,734,109
- Issue date May 11, 2004
- International Business Machines Corporation
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS structure with non-epitaxial raised source/drain and self-alig...
- Patent number 6,566,198
- Issue date May 20, 2003
- International Business Machines Corporation
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuits with reduced substrate capacitance
- Patent number 6,562,666
- Issue date May 13, 2003
- International Business Machines Corporation
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating an MOS device having highly-localized halo...
- Patent number 6,509,241
- Issue date Jan 21, 2003
- International Business Machines Corporation
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistors with raised sources and drains
- Patent number 6,429,084
- Issue date Aug 6, 2002
- International Business Machines Corporation
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS device structures and method of making same
- Patent number 6,303,450
- Issue date Oct 16, 2001
- International Business Machines Corporation
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming steep lateral doping distribution at source/drain junctions
- Patent number 6,268,640
- Issue date Jul 31, 2001
- International Business Machines Corporation
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
CMOS device on ultrathin SOI with a deposited raised source/drain,...
- Publication number 20050040465
- Publication date Feb 24, 2005
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of building a CMOS structure on thin SOI with source/drain e...
- Publication number 20040140507
- Publication date Jul 22, 2004
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS device on ultrathin SOI with a deposited raised source/drain,...
- Publication number 20040129979
- Publication date Jul 8, 2004
- International Business Machines Corporation
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of building a CMOS structure on thin SOI with source/drain e...
- Publication number 20030032295
- Publication date Feb 13, 2003
- International Business Machines Corporation
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Activating in-situ doped gate on high dielectric constant materials
- Publication number 20030025167
- Publication date Feb 6, 2003
- International Business Machines Corporation
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS structure with maximized polysilicon gate activation and a met...
- Publication number 20020173105
- Publication date Nov 21, 2002
- International Business Machines Corporation
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS structure with non-epitaxial raised source/drain and self-alig...
- Publication number 20020142551
- Publication date Oct 3, 2002
- International Business Machines Corporation
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for fabricating an MOS device having highly-localized halo...
- Publication number 20020072176
- Publication date Jun 13, 2002
- Heemyong Park
- H01 - BASIC ELECTRIC ELEMENTS

Heemyong Park

Person

Patents Grantslast 30 patents

Method of building a CMOS structure on thin SOI with source/drain e...

CMOS device on ultrathin SOI with a deposited raised source/drain,...

CMOS device on ultrathin SOI with a deposited raised source/drain,...

CMOS structure with maximized polysilicon gate activation and a met...

Method of building a CMOS structure on thin SOI with source/drain e...

CMOS structure with non-epitaxial raised source/drain and self-alig...

Integrated circuits with reduced substrate capacitance

Process for fabricating an MOS device having highly-localized halo...

MOS transistors with raised sources and drains

CMOS device structures and method of making same

Forming steep lateral doping distribution at source/drain junctions

Patents Applicationslast 30 patents

CMOS device on ultrathin SOI with a deposited raised source/drain,...

Method of building a CMOS structure on thin SOI with source/drain e...

CMOS device on ultrathin SOI with a deposited raised source/drain,...

Method of building a CMOS structure on thin SOI with source/drain e...

Activating in-situ doped gate on high dielectric constant materials

CMOS structure with maximized polysilicon gate activation and a met...

CMOS structure with non-epitaxial raised source/drain and self-alig...

Process for fabricating an MOS device having highly-localized halo...