Heinrich Brunner

Person

Munich, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Power semiconductor element with an emitter region and a stop zone...
- Patent number 7,612,388
- Issue date Nov 3, 2009
- Infineon Technologies AG
- Josef-Georg Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component having field-shaping regions
- Patent number 6,891,204
- Issue date May 10, 2005
- Infineon Technologies AG
- Heinrich Brunner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor component for high reverse voltages
- Patent number 6,441,408
- Issue date Aug 27, 2002
- Infineon Technologies AG
- Alfred Porst
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor which can be controlled by field effect and meth...
- Patent number 6,309,920
- Issue date Oct 30, 2001
- Siemens Aktiengesellschaft
- Thomas Laska
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with a control electrode for modulating the...
- Patent number 6,150,675
- Issue date Nov 21, 2000
- Siemens Aktiengesellschaft
- Torsten Franke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS semiconductor component having improved transmission properties
- Patent number 5,703,384
- Issue date Dec 30, 1997
- Siemens Aktiengesellschaft
- Heinrich Brunner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacture of a controllable power semiconductor elemen...
- Patent number 5,506,153
- Issue date Apr 9, 1996
- Siemens Aktiengesellschaft
- Heinrich Brunner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controllable power semiconductor element with buffer zone and metho...
- Patent number 5,466,951
- Issue date Nov 14, 1995
- Siemens Aktiengesellschaft
- Heinrich Brunner
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor component having field-shaping regions
- Publication number 20010045567
- Publication date Nov 29, 2001
- Franz Auerbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor element with an emitter region and a stop zone...
- Publication number 20010005024
- Publication date Jun 28, 2001
- Josef-Georg Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor component for high reverse voltages
- Publication number 20010005036
- Publication date Jun 28, 2001
- Alfred Porst
- H01 - BASIC ELECTRIC ELEMENTS

Heinrich Brunner

Person

Patents Grantslast 30 patents

Power semiconductor element with an emitter region and a stop zone...

Semiconductor component having field-shaping regions

Power semiconductor component for high reverse voltages

Bipolar transistor which can be controlled by field effect and meth...

Semiconductor component with a control electrode for modulating the...

MOS semiconductor component having improved transmission properties

Method for manufacture of a controllable power semiconductor elemen...

Controllable power semiconductor element with buffer zone and metho...

Patents Applicationslast 30 patents

Semiconductor component having field-shaping regions

Power semiconductor element with an emitter region and a stop zone...

Power semiconductor component for high reverse voltages