Henan Zhang

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for filling recessed features in semiconductor devices with...
- Patent number 12,237,216
- Issue date Feb 25, 2025
- Tokyo Electron Limited
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods to prevent surface charge induced cd-dependent etching of m...
- Patent number 12,148,625
- Issue date Nov 19, 2024
- Tokyo Electron Limited
- Shan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wet etch process and method to control fin height and channel area...
- Patent number 12,148,624
- Issue date Nov 19, 2024
- Tokyo Electron Limited
- Shan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for planarizing a substrate using a combined wet etch and c...
- Patent number 12,100,598
- Issue date Sep 24, 2024
- Tokyo Electron Limited
- Shan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wet etch process and method to provide uniform etching of material...
- Patent number 12,100,599
- Issue date Sep 24, 2024
- Tokyo Electron Limited
- Shan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Localized etch stop layer
- Patent number 11,532,517
- Issue date Dec 20, 2022
- Tokyo Electron Limited
- Yun Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming a semiconductor feature using atomic layer etch
- Patent number 11,424,123
- Issue date Aug 23, 2022
- Tokyo Electron Limited
- Eric Chih-Fang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radiation of substrates during processing and systems thereof
- Patent number 11,289,325
- Issue date Mar 29, 2022
- Tokyo Electron Limited
- Michael Edley
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FABRICATING THREE-DIMENSIONAL SEMICONDUCTOR STRUCTURES
- Publication number 20240147719
- Publication date May 2, 2024
- TOKYO ELECTRON LIMITED
- Soo Doo Chae
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS TO PROVIDE UNIFORM WET ETCHING OF MATERIAL WITHIN HIGH ASPE...
- Publication number 20240105455
- Publication date Mar 28, 2024
- TOKYO ELECTRON LIMITED
- Shan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS TO PREVENT SURFACE CHARGE INDUCED CD-DEPENDENT ETCHING OF M...
- Publication number 20240096638
- Publication date Mar 21, 2024
- TOKYO ELECTRON LIMITED
- Shan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WET ETCH PROCESS AND METHOD TO PROVIDE UNIFORM ETCHING OF MATERIAL...
- Publication number 20240087908
- Publication date Mar 14, 2024
- TOKYO ELECTRON LIMITED
- Shan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR PLANARIZING A SUBSTRATE USING A COMBINED WET ETCH AND C...
- Publication number 20240087907
- Publication date Mar 14, 2024
- TOKYO ELECTRON LIMITED
- Shan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WET ETCH PROCESS AND METHOD TO CONTROL FIN HEIGHT AND CHANNEL AREA...
- Publication number 20240087909
- Publication date Mar 14, 2024
- TOKYO ELECTRON LIMITED
- Shan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WET ETCH PROCESS AND METHODS TO FORM AIR GAPS BETWEEN METAL INTERCO...
- Publication number 20240087950
- Publication date Mar 14, 2024
- TOKYO ELECTRON LIMITED
- Shan Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SACRIFICIAL CAPPING LAYER FOR GATE PROTECTION
- Publication number 20220344169
- Publication date Oct 27, 2022
- TOKYO ELECTRON LIMITED
- Yun HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...
- Publication number 20220301930
- Publication date Sep 22, 2022
- TOKYO ELECTRON LIMITED
- Kai-Hung Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Radiation of Substrates During Processing and Systems Thereof
- Publication number 20220189764
- Publication date Jun 16, 2022
- TOKYO ELECTRON LIMITED
- Michael Edley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Radiation of Substrates During Processing and Systems Thereof
- Publication number 20210407790
- Publication date Dec 30, 2021
- TOKYO ELECTRON LIMITED
- Michael Edley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING A SEMICONDUCTOR FEATURE USING ATOMIC LAYER ETCH
- Publication number 20210265164
- Publication date Aug 26, 2021
- TOKYO ELECTRON LIMITED
- Eric Chih-Fang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCALIZED ETCH STOP LAYER
- Publication number 20210242089
- Publication date Aug 5, 2021
- TOKYO ELECTRON LIMITED
- Yun Han
- H01 - BASIC ELECTRIC ELEMENTS

Henan Zhang

Person

Patents Grantslast 30 patents

Method for filling recessed features in semiconductor devices with...

Methods to prevent surface charge induced cd-dependent etching of m...

Wet etch process and method to control fin height and channel area...

Methods for planarizing a substrate using a combined wet etch and c...

Wet etch process and method to provide uniform etching of material...

Localized etch stop layer

Forming a semiconductor feature using atomic layer etch

Radiation of substrates during processing and systems thereof

Patents Applicationslast 30 patents

FABRICATING THREE-DIMENSIONAL SEMICONDUCTOR STRUCTURES

METHODS TO PROVIDE UNIFORM WET ETCHING OF MATERIAL WITHIN HIGH ASPE...

METHODS TO PREVENT SURFACE CHARGE INDUCED CD-DEPENDENT ETCHING OF M...

WET ETCH PROCESS AND METHOD TO PROVIDE UNIFORM ETCHING OF MATERIAL...

METHODS FOR PLANARIZING A SUBSTRATE USING A COMBINED WET ETCH AND C...

WET ETCH PROCESS AND METHOD TO CONTROL FIN HEIGHT AND CHANNEL AREA...

WET ETCH PROCESS AND METHODS TO FORM AIR GAPS BETWEEN METAL INTERCO...

SACRIFICIAL CAPPING LAYER FOR GATE PROTECTION

METHOD FOR FILLING RECESSED FEATURES IN SEMICONDUCTOR DEVICES WITH...

Radiation of Substrates During Processing and Systems Thereof

Radiation of Substrates During Processing and Systems Thereof

FORMING A SEMICONDUCTOR FEATURE USING ATOMIC LAYER ETCH

LOCALIZED ETCH STOP LAYER