Heng Wu

Person

Altamont, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Strained semiconductor FET devices with epitaxial quality improvement
- Patent number 12,176,434
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-array magnetic shield for spin-transfer torque magneto-resistive...
- Patent number 12,178,137
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Heng Wu
Information Patent Grant
Stacked nanosheet transistor with defect free channel
- Patent number 12,176,416
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Lan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Analog persistent circuit for storage access monitoring
- Patent number 12,153,821
- Issue date Nov 26, 2024
- International Business Machines Corporation
- Krishna Thangaraj
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Stacked transistor structure with reflection layer
- Patent number 12,142,599
- Issue date Nov 12, 2024
- International Business Machines Corporation
- Teresa J. Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked device with buried interconnect
- Patent number 12,142,526
- Issue date Nov 12, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-state SOT-MRAM structure
- Patent number 12,127,482
- Issue date Oct 22, 2024
- International Business Machines Corporation
- Heng Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrostatic discharge diode having dielectric isolation layer
- Patent number 12,119,341
- Issue date Oct 15, 2024
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three terminal phase change memory with self-aligned contacts
- Patent number 12,108,692
- Issue date Oct 1, 2024
- International Business Machines Corporation
- Heng Wu
Information Patent Grant
Complementary field effect transistor devices
- Patent number 12,087,770
- Issue date Sep 10, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin-orbit torque and spin-transfer torque magnetoresistive random-...
- Patent number 12,016,251
- Issue date Jun 18, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local vertical interconnects for monolithic stack transistors
- Patent number 12,002,805
- Issue date Jun 4, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Buried power rail contact
- Patent number 12,002,874
- Issue date Jun 4, 2024
- International Business Machines Corporation
- Junli Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement-channel fabrication of III-V nanosheet devices
- Patent number 11,990,530
- Issue date May 21, 2024
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimized contact resistance for stacked FET devices
- Patent number 11,948,944
- Issue date Apr 2, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor with enhanced bottom isolation
- Patent number 11,942,557
- Issue date Mar 26, 2024
- International Business Machines Corporation
- Lan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction device with minimum stray field
- Patent number 11,944,013
- Issue date Mar 26, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned bottom spacer epi last flow for VTFET
- Patent number 11,923,434
- Issue date Mar 5, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VFET contact formation
- Patent number 11,908,907
- Issue date Feb 20, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact formation for vertical field effect transistors
- Patent number 11,908,944
- Issue date Feb 20, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor
- Patent number 11,901,438
- Issue date Feb 13, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Contact resistance reduction in nanosheet device structure
- Patent number 11,894,423
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom source/drain for fin field effect transistors
- Patent number 11,830,946
- Issue date Nov 28, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magneto-electric low power analogue magnetic tunnel junction memory
- Patent number 11,823,724
- Issue date Nov 21, 2023
- International Business Machines Corporation
- Saba Zare
- G11 - INFORMATION STORAGE
Information Patent Grant
PCM cell with resistance drift correction
- Patent number 11,818,971
- Issue date Nov 14, 2023
- International Business Machines Corporation
- Heng Wu
Information Patent Grant
VTFET with buried power rails
- Patent number 11,764,298
- Issue date Sep 19, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing gate resistance in stacked vertical transport field effect...
- Patent number 11,756,957
- Issue date Sep 12, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin structure for vertical transport field effect transistor
- Patent number 11,749,744
- Issue date Sep 5, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement-channel fabrication of III-V nanosheet devices
- Patent number 11,742,409
- Issue date Aug 29, 2023
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top epitaxial layer and contact for VTFET
- Patent number 11,742,354
- Issue date Aug 29, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NANOSHEET TRANSISTOR
- Publication number 20240413224
- Publication date Dec 12, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
STACKED TWO-TRANSISTOR DYNAMIC RANDOM ACCESS MEMORY CELL
- Publication number 20240405071
- Publication date Dec 5, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED ReRAM WITH BACKSIDE CONTACT
- Publication number 20240196627
- Publication date Jun 13, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL RERAM DEVICE
- Publication number 20240179924
- Publication date May 30, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT ARCHITECTURE USING TRANSISTORS WITH DYNAMIC DUAL FUNCTIONAL...
- Publication number 20240172454
- Publication date May 23, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH STRAINED NANOSHEET CHANNEL
- Publication number 20240170538
- Publication date May 23, 2024
- International Business Machines Corporation
- Liqiao Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIRECT BACKSIDE SELF-ALIGNED CONTACT
- Publication number 20240128333
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS
- Publication number 20240128346
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY BACKSIDE CAPACITOR AND INDUCTOR
- Publication number 20240105609
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET
- Publication number 20240096887
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Ruqiang BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM with Improved Program and Sensing Margin for Scaled Nanosheet...
- Publication number 20240098961
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL NAND WITH BACKSIDE STACKING
- Publication number 20240099011
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BACKSIDE CONTACT IN NANOSHEET WITHOUT BDI
- Publication number 20240096699
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH DATA SCRUBBING
- Publication number 20240087630
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Heng Wu
- G11 - INFORMATION STORAGE
Information Patent Application
CONTACT JUMPER FOR NON-SELF ALIGNED CONTACT DEVICES
- Publication number 20240088241
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE POWER DELIVER NETWORK CONNECTION THROUGH DUMMY GATES
- Publication number 20240079476
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED LONG CHANNEL TRANSISTOR
- Publication number 20240063189
- Publication date Feb 22, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-Vt REPLACEMENT METAL GATE BONDED STACKED FETs
- Publication number 20240006480
- Publication date Jan 4, 2024
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBTRACTIVE SOURCE DRAIN CONTACT FOR STACKED DEVICES
- Publication number 20230420502
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE STACK DUAL CHANNEL GATE-ALL-AROUND NANOSHEET WITH STRAINED P...
- Publication number 20230420457
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANALOG PERSISTENT CIRCUIT FOR STORAGE ACCESS MONITORING
- Publication number 20230418504
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Krishna Thangaraj
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SELF-ALIGNED GATE JUMPER CONNECTING ADJACENT GATES
- Publication number 20230411473
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM SEMICONDUCTOR ACTIVE FIN WIDTH
- Publication number 20230402545
- Publication date Dec 14, 2023
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VTFET WITH BURIED POWER RAILS
- Publication number 20230387295
- Publication date Nov 30, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD-EFFECT TRANSISTOR (FET) STACKED OVER HORIZONTAL FET
- Publication number 20230378259
- Publication date Nov 23, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL INTERCONNECT FOR CROSS COUPLING
- Publication number 20230360971
- Publication date Nov 9, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-COUPLING CONNECTIONS FOR STACKED FIELD EFFECT TRANSISTORS
- Publication number 20230343821
- Publication date Oct 26, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSITION METAL DICHALCOGENIDE (TMD) TRANSISTOR STRUCTURE
- Publication number 20230343833
- Publication date Oct 26, 2023
- International Business Machines Corporation
- Liqiao Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTORS HAVING BOTTOM CONTACT WITH REPLACEMENT SPACER
- Publication number 20230335554
- Publication date Oct 19, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET SIDEWALL STRAP CONNECTIONS BETWEEN GATES
- Publication number 20230317727
- Publication date Oct 5, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Strained semiconductor FET devices with epitaxial quality improvement

In-array magnetic shield for spin-transfer torque magneto-resistive...

Stacked nanosheet transistor with defect free channel

Analog persistent circuit for storage access monitoring

Stacked transistor structure with reflection layer

Stacked device with buried interconnect

Multi-state SOT-MRAM structure

Electrostatic discharge diode having dielectric isolation layer

Three terminal phase change memory with self-aligned contacts

Complementary field effect transistor devices

Spin-orbit torque and spin-transfer torque magnetoresistive random-...

Local vertical interconnects for monolithic stack transistors

Buried power rail contact

Replacement-channel fabrication of III-V nanosheet devices

Optimized contact resistance for stacked FET devices

Nanosheet transistor with enhanced bottom isolation

Magnetic tunnel junction device with minimum stray field

Self-aligned bottom spacer epi last flow for VTFET

VFET contact formation

Contact formation for vertical field effect transistors

Nanosheet transistor

Contact resistance reduction in nanosheet device structure

Bottom source/drain for fin field effect transistors

Magneto-electric low power analogue magnetic tunnel junction memory

PCM cell with resistance drift correction

VTFET with buried power rails

Reducing gate resistance in stacked vertical transport field effect...

Fin structure for vertical transport field effect transistor

Replacement-channel fabrication of III-V nanosheet devices

Top epitaxial layer and contact for VTFET

Patents Applicationslast 30 patents

NANOSHEET TRANSISTOR

STACKED TWO-TRANSISTOR DYNAMIC RANDOM ACCESS MEMORY CELL

EMBEDDED ReRAM WITH BACKSIDE CONTACT

THREE DIMENSIONAL RERAM DEVICE

CIRCUIT ARCHITECTURE USING TRANSISTORS WITH DYNAMIC DUAL FUNCTIONAL...

SEMICONDUCTOR STRUCTURE WITH STRAINED NANOSHEET CHANNEL

DIRECT BACKSIDE SELF-ALIGNED CONTACT

GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS

HIGH DENSITY BACKSIDE CAPACITOR AND INDUCTOR

MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET

SRAM with Improved Program and Sensing Margin for Scaled Nanosheet...

VERTICAL NAND WITH BACKSIDE STACKING

SELF-ALIGNED BACKSIDE CONTACT IN NANOSHEET WITHOUT BDI

MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH DATA SCRUBBING

CONTACT JUMPER FOR NON-SELF ALIGNED CONTACT DEVICES

BACKSIDE POWER DELIVER NETWORK CONNECTION THROUGH DUMMY GATES

STACKED LONG CHANNEL TRANSISTOR

MULTI-Vt REPLACEMENT METAL GATE BONDED STACKED FETs

SUBTRACTIVE SOURCE DRAIN CONTACT FOR STACKED DEVICES

SINGLE STACK DUAL CHANNEL GATE-ALL-AROUND NANOSHEET WITH STRAINED P...

ANALOG PERSISTENT CIRCUIT FOR STORAGE ACCESS MONITORING

SELF-ALIGNED GATE JUMPER CONNECTING ADJACENT GATES

UNIFORM SEMICONDUCTOR ACTIVE FIN WIDTH

VTFET WITH BURIED POWER RAILS

VERTICAL FIELD-EFFECT TRANSISTOR (FET) STACKED OVER HORIZONTAL FET

LOCAL INTERCONNECT FOR CROSS COUPLING

CROSS-COUPLING CONNECTIONS FOR STACKED FIELD EFFECT TRANSISTORS

TRANSITION METAL DICHALCOGENIDE (TMD) TRANSISTOR STRUCTURE

STACKED TRANSISTORS HAVING BOTTOM CONTACT WITH REPLACEMENT SPACER

STACKED FET SIDEWALL STRAP CONNECTIONS BETWEEN GATES