Heng Wu

Person

Altamont, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Optimized contact resistance for stacked FET devices
- Patent number 11,948,944
- Issue date Apr 2, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor with enhanced bottom isolation
- Patent number 11,942,557
- Issue date Mar 26, 2024
- International Business Machines Corporation
- Lan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction device with minimum stray field
- Patent number 11,944,013
- Issue date Mar 26, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned bottom spacer epi last flow for VTFET
- Patent number 11,923,434
- Issue date Mar 5, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
VFET contact formation
- Patent number 11,908,907
- Issue date Feb 20, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact formation for vertical field effect transistors
- Patent number 11,908,944
- Issue date Feb 20, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor
- Patent number 11,901,438
- Issue date Feb 13, 2024
- Adeia Semiconductor Solutions LLC
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Contact resistance reduction in nanosheet device structure
- Patent number 11,894,423
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom source/drain for fin field effect transistors
- Patent number 11,830,946
- Issue date Nov 28, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magneto-electric low power analogue magnetic tunnel junction memory
- Patent number 11,823,724
- Issue date Nov 21, 2023
- International Business Machines Corporation
- Saba Zare
- G11 - INFORMATION STORAGE
Information Patent Grant
PCM cell with resistance drift correction
- Patent number 11,818,971
- Issue date Nov 14, 2023
- International Business Machines Corporation
- Heng Wu
Information Patent Grant
VTFET with buried power rails
- Patent number 11,764,298
- Issue date Sep 19, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing gate resistance in stacked vertical transport field effect...
- Patent number 11,756,957
- Issue date Sep 12, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin structure for vertical transport field effect transistor
- Patent number 11,749,744
- Issue date Sep 5, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement-channel fabrication of III-V nanosheet devices
- Patent number 11,742,409
- Issue date Aug 29, 2023
- International Business Machines Corporation
- Jingyun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Top epitaxial layer and contact for VTFET
- Patent number 11,742,354
- Issue date Aug 29, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High retention eMRAM using VCMA-assisted writing
- Patent number 11,729,996
- Issue date Aug 15, 2023
- International Business Machines Corporation
- Heng Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
VTFET with cell height constraints
- Patent number 11,715,794
- Issue date Aug 1, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static random-access memory cell design
- Patent number 11,710,521
- Issue date Jul 25, 2023
- International Business Machines Corporation
- Lan Yu
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked nanosheet transistor with defect free channel
- Patent number 11,705,504
- Issue date Jul 18, 2023
- International Business Machines Corporation
- Lan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxygen-free replacement liner for improved transistor performance
- Patent number 11,688,635
- Issue date Jun 27, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low power MTJ-based analog memory device
- Patent number 11,664,059
- Issue date May 30, 2023
- International Business Machines Corporation
- Dimitri Houssameddine
- G11 - INFORMATION STORAGE
Information Patent Grant
Silicide formation for source/drain contact in a vertical transport...
- Patent number 11,621,199
- Issue date Apr 4, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS top source/drain region doping and epitaxial growth for a vert...
- Patent number 11,615,990
- Issue date Mar 28, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transport field effect transistor with bottom source/drain
- Patent number 11,616,140
- Issue date Mar 28, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrapped-around contact for vertical field effect transistor top sou...
- Patent number 11,605,717
- Issue date Mar 14, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PCM cell with resistance drift correction
- Patent number 11,563,173
- Issue date Jan 24, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistors with inner airgaps
- Patent number 11,557,651
- Issue date Jan 17, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrating embedded memory on CMOS logic using thin film transistors
- Patent number 11,489,009
- Issue date Nov 1, 2022
- International Business Machines Corporation
- Heng Wu
- G11 - INFORMATION STORAGE
Information Patent Grant
Confined gate recessing for vertical transport field effect transis...
- Patent number 11,476,163
- Issue date Oct 18, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DIRECT BACKSIDE SELF-ALIGNED CONTACT
- Publication number 20240128333
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS
- Publication number 20240128346
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY BACKSIDE CAPACITOR AND INDUCTOR
- Publication number 20240105609
- Publication date Mar 28, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET
- Publication number 20240096887
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Ruqiang BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SRAM with Improved Program and Sensing Margin for Scaled Nanosheet...
- Publication number 20240098961
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL NAND WITH BACKSIDE STACKING
- Publication number 20240099011
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BACKSIDE CONTACT IN NANOSHEET WITHOUT BDI
- Publication number 20240096699
- Publication date Mar 21, 2024
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH DATA SCRUBBING
- Publication number 20240087630
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Heng Wu
- G11 - INFORMATION STORAGE
Information Patent Application
CONTACT JUMPER FOR NON-SELF ALIGNED CONTACT DEVICES
- Publication number 20240088241
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE POWER DELIVER NETWORK CONNECTION THROUGH DUMMY GATES
- Publication number 20240079476
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Tao Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED LONG CHANNEL TRANSISTOR
- Publication number 20240063189
- Publication date Feb 22, 2024
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-Vt REPLACEMENT METAL GATE BONDED STACKED FETs
- Publication number 20240006480
- Publication date Jan 4, 2024
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBTRACTIVE SOURCE DRAIN CONTACT FOR STACKED DEVICES
- Publication number 20230420502
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANALOG PERSISTENT CIRCUIT FOR STORAGE ACCESS MONITORING
- Publication number 20230418504
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Krishna Thangaraj
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SINGLE STACK DUAL CHANNEL GATE-ALL-AROUND NANOSHEET WITH STRAINED P...
- Publication number 20230420457
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE JUMPER CONNECTING ADJACENT GATES
- Publication number 20230411473
- Publication date Dec 21, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM SEMICONDUCTOR ACTIVE FIN WIDTH
- Publication number 20230402545
- Publication date Dec 14, 2023
- International Business Machines Corporation
- Min Gyu Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VTFET WITH BURIED POWER RAILS
- Publication number 20230387295
- Publication date Nov 30, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD-EFFECT TRANSISTOR (FET) STACKED OVER HORIZONTAL FET
- Publication number 20230378259
- Publication date Nov 23, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL INTERCONNECT FOR CROSS COUPLING
- Publication number 20230360971
- Publication date Nov 9, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CROSS-COUPLING CONNECTIONS FOR STACKED FIELD EFFECT TRANSISTORS
- Publication number 20230343821
- Publication date Oct 26, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSITION METAL DICHALCOGENIDE (TMD) TRANSISTOR STRUCTURE
- Publication number 20230343833
- Publication date Oct 26, 2023
- International Business Machines Corporation
- Liqiao Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED TRANSISTORS HAVING BOTTOM CONTACT WITH REPLACEMENT SPACER
- Publication number 20230335554
- Publication date Oct 19, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FET SIDEWALL STRAP CONNECTIONS BETWEEN GATES
- Publication number 20230317727
- Publication date Oct 5, 2023
- International Business Machines Corporation
- Chen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED DEVICE WITH BURIED INTERCONNECT
- Publication number 20230307296
- Publication date Sep 28, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED FETS INCLUDING DEVICES WITH THICK GATE OXIDE
- Publication number 20230307452
- Publication date Sep 28, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY MEMORY WITH STACKED NANOSHEET TRANSISTORS
- Publication number 20230309324
- Publication date Sep 28, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY
- Publication number 20230309320
- Publication date Sep 28, 2023
- International Business Machines Corporation
- Heng Wu
- G11 - INFORMATION STORAGE
Information Patent Application
DETERMINISTIC VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY (VCMA) MRAM WI...
- Publication number 20230298646
- Publication date Sep 21, 2023
- International Business Machines Corporation
- Heng Wu
- G11 - INFORMATION STORAGE
Information Patent Application
STACKED TRANSISTOR STRUCTURE WITH REFLECTION LAYER
- Publication number 20230299053
- Publication date Sep 21, 2023
- International Business Machines Corporation
- Teresa J. Wu
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Optimized contact resistance for stacked FET devices

Nanosheet transistor with enhanced bottom isolation

Magnetic tunnel junction device with minimum stray field

Self-aligned bottom spacer epi last flow for VTFET

VFET contact formation

Contact formation for vertical field effect transistors

Nanosheet transistor

Contact resistance reduction in nanosheet device structure

Bottom source/drain for fin field effect transistors

Magneto-electric low power analogue magnetic tunnel junction memory

PCM cell with resistance drift correction

VTFET with buried power rails

Reducing gate resistance in stacked vertical transport field effect...

Fin structure for vertical transport field effect transistor

Replacement-channel fabrication of III-V nanosheet devices

Top epitaxial layer and contact for VTFET

High retention eMRAM using VCMA-assisted writing

VTFET with cell height constraints

Static random-access memory cell design

Stacked nanosheet transistor with defect free channel

Oxygen-free replacement liner for improved transistor performance

Low power MTJ-based analog memory device

Silicide formation for source/drain contact in a vertical transport...

CMOS top source/drain region doping and epitaxial growth for a vert...

Vertical transport field effect transistor with bottom source/drain

Wrapped-around contact for vertical field effect transistor top sou...

PCM cell with resistance drift correction

Nanosheet transistors with inner airgaps

Integrating embedded memory on CMOS logic using thin film transistors

Confined gate recessing for vertical transport field effect transis...

Patents Applicationslast 30 patents

DIRECT BACKSIDE SELF-ALIGNED CONTACT

GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS

HIGH DENSITY BACKSIDE CAPACITOR AND INDUCTOR

MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET

SRAM with Improved Program and Sensing Margin for Scaled Nanosheet...

VERTICAL NAND WITH BACKSIDE STACKING

SELF-ALIGNED BACKSIDE CONTACT IN NANOSHEET WITHOUT BDI

MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH DATA SCRUBBING

CONTACT JUMPER FOR NON-SELF ALIGNED CONTACT DEVICES

BACKSIDE POWER DELIVER NETWORK CONNECTION THROUGH DUMMY GATES

STACKED LONG CHANNEL TRANSISTOR

MULTI-Vt REPLACEMENT METAL GATE BONDED STACKED FETs

SUBTRACTIVE SOURCE DRAIN CONTACT FOR STACKED DEVICES

ANALOG PERSISTENT CIRCUIT FOR STORAGE ACCESS MONITORING

SINGLE STACK DUAL CHANNEL GATE-ALL-AROUND NANOSHEET WITH STRAINED P...

SELF-ALIGNED GATE JUMPER CONNECTING ADJACENT GATES

UNIFORM SEMICONDUCTOR ACTIVE FIN WIDTH

VTFET WITH BURIED POWER RAILS

VERTICAL FIELD-EFFECT TRANSISTOR (FET) STACKED OVER HORIZONTAL FET

LOCAL INTERCONNECT FOR CROSS COUPLING

CROSS-COUPLING CONNECTIONS FOR STACKED FIELD EFFECT TRANSISTORS

TRANSITION METAL DICHALCOGENIDE (TMD) TRANSISTOR STRUCTURE

STACKED TRANSISTORS HAVING BOTTOM CONTACT WITH REPLACEMENT SPACER

STACKED FET SIDEWALL STRAP CONNECTIONS BETWEEN GATES

STACKED DEVICE WITH BURIED INTERCONNECT

STACKED FETS INCLUDING DEVICES WITH THICK GATE OXIDE

HIGH DENSITY MEMORY WITH STACKED NANOSHEET TRANSISTORS

EMBEDDED MAGNETORESISTIVE RANDOM ACCESS MEMORY

DETERMINISTIC VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY (VCMA) MRAM WI...

STACKED TRANSISTOR STRUCTURE WITH REFLECTION LAYER