Henry K. Utomo

Person

Newbergh, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor manufactured nano-structures for microbe or virus tra...
- Patent number 11,150,168
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Yann Astier
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
FinFET with dielectric isolation after gate module for improved sou...
- Patent number 11,081,583
- Issue date Aug 3, 2021
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor manufactured nano-structures for microbe or virus tra...
- Patent number 11,060,960
- Issue date Jul 13, 2021
- International Business Machines Corporation
- Yann Astier
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Embedded source/drain structure for tall FinFet and method of forma...
- Patent number 10,896,976
- Issue date Jan 19, 2021
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact via structures
- Patent number 10,777,735
- Issue date Sep 15, 2020
- International Business Machines Corporation
- Chih-Chao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact via structures
- Patent number 10,686,124
- Issue date Jun 16, 2020
- International Business Machines Corporation
- Chih-Chao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with dielectric isolation after gate module for improved sou...
- Patent number 10,615,279
- Issue date Apr 7, 2020
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming self-aligned contacts on pillar structures
- Patent number 10,586,920
- Issue date Mar 10, 2020
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming self-aligned contacts on pillar structures
- Patent number 10,586,921
- Issue date Mar 10, 2020
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded source/drain structure for tall FinFET and method of forma...
- Patent number 10,559,690
- Issue date Feb 11, 2020
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor manufactured nano-structures for microbe or virus tra...
- Patent number 10,557,779
- Issue date Feb 11, 2020
- International Business Machines Corporation
- Yann Astier
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Semiconductor manufactured nano-structures for microbe or virus tra...
- Patent number 10,393,635
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Yann Astier
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor manufactured nano-structures for microbe or virus tra...
- Patent number 10,246,730
- Issue date Apr 2, 2019
- International Business Machines Corporation
- Yann Astier
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor fin isolation by a well trapping fin portion
- Patent number 10,242,980
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with dielectric isolation after gate module for improved sou...
- Patent number 10,243,077
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming self-aligned contacts on pillar structures
- Patent number 10,109,675
- Issue date Oct 23, 2018
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Asymmetric semiconductor device and method of forming same
- Patent number 10,049,942
- Issue date Aug 14, 2018
- GLOBALFOUNDRIES Inc.
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction butting structure using nonuniform trench shape
- Patent number 9,923,082
- Issue date Mar 20, 2018
- Global Foundries Inc.
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with dielectric isolation after gate module for improved sou...
- Patent number 9,917,190
- Issue date Mar 13, 2018
- International Business Machines Corporation
- Eric C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type field-effect transistors with strained channels
- Patent number 9,905,694
- Issue date Feb 27, 2018
- GLOBALFOUNDRIES Inc.
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming uniform and pitch independent fin recess
- Patent number 9,875,939
- Issue date Jan 23, 2018
- GLOBALFOUNDRIES Inc.
- Yue Ke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded source/drain structure for tall finFET and method of forma...
- Patent number 9,818,877
- Issue date Nov 14, 2017
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type field-effect transistors with strained channels
- Patent number 9,680,019
- Issue date Jun 13, 2017
- GLOBALFOUNDRIES Inc.
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conformal buffer layer in source and drain regions of fin-type tran...
- Patent number 9,634,084
- Issue date Apr 25, 2017
- GLOBALFOUNDRIES Inc.
- Christopher D. Sheraw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction butting structure using nonuniform trench shape
- Patent number 9,627,480
- Issue date Apr 18, 2017
- GLOBALFOUNDRIES Inc.
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diamond shaped source drain epitaxy with underlying buffer layer
- Patent number 9,577,099
- Issue date Feb 21, 2017
- GLOBALFOUNDRIES Inc.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET and nanowire semiconductor devices with suspended channel re...
- Patent number 9,577,100
- Issue date Feb 21, 2017
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Forming fins of different semiconductor materials on the same subst...
- Patent number 9,536,900
- Issue date Jan 3, 2017
- GLOBALFOUNDRIES INC.
- Ravikumar Ramachandran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fin isolation by a well trapping fin portion
- Patent number 9,496,258
- Issue date Nov 15, 2016
- International Business Machines Corporation
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 9,412,842
- Issue date Aug 9, 2016
- Samsung Electronics Co., Ltd.
- Jin-Bum Kim
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SPIN-ORBIT TORQUE MEMORY DEVICES
- Publication number 20240324468
- Publication date Sep 26, 2024
- International Business Machines Corporation
- Ching-Tzu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU LOW TEMPERATURE DIELECTRIC DEPOSITION AND SELECTIVE TRIM OF...
- Publication number 20230180487
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Luxherta Buzi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MANUFACTURED NANO-STRUCTURES FOR MICROBE OR VIRUS TRA...
- Publication number 20200141845
- Publication date May 7, 2020
- International Business Machines Corporation
- Yann Astier
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
CONTACT VIA STRUCTURES
- Publication number 20200083436
- Publication date Mar 12, 2020
- International Business Machines Corporation
- Chih-Chao YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT VIA STRUCTURES
- Publication number 20200083426
- Publication date Mar 12, 2020
- International Business Machines Corporation
- Chih-Chao YANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...
- Publication number 20200066908
- Publication date Feb 27, 2020
- International Business Machines Corporation
- ERIC C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED SOURCE/DRAIN STRUCTURE FOR TALL FINFET AND METHOD OF FORMA...
- Publication number 20190371941
- Publication date Dec 5, 2019
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MANUFACTURED NANO-STRUCTURES FOR MICROBE OR VIRUS TRA...
- Publication number 20190310171
- Publication date Oct 10, 2019
- International Business Machines Corporation
- Yann Astier
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Application
EMBEDDED SOURCE/DRAIN STRUCTURE FOR TALL FINFET AND METHOD OF FORMA...
- Publication number 20190252548
- Publication date Aug 15, 2019
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED SOURCE/DRAIN STRUCTURE FOR TALL FINFET AND METHOD OF FORMA...
- Publication number 20190051751
- Publication date Feb 14, 2019
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SELF-ALIGNED CONTACTS ON PILLAR STRUCTURES
- Publication number 20180308898
- Publication date Oct 25, 2018
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SELF-ALIGNED CONTACTS ON PILLAR STRUCTURES
- Publication number 20180308897
- Publication date Oct 25, 2018
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SELF-ALIGNED CONTACTS ON PILLAR STRUCTURES
- Publication number 20180261649
- Publication date Sep 13, 2018
- International Business Machines Corporation
- Anthony J. Annunziata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...
- Publication number 20180097113
- Publication date Apr 5, 2018
- International Business Machines Corporation
- ERIC C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE FIELD-EFFECT TRANSISTORS WITH STRAINED CHANNELS
- Publication number 20180026137
- Publication date Jan 25, 2018
- GLOBALFOUNDRIES INC.
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MANUFACTURED NANO-STRUCTURES FOR MICROBE OR VIRUS TRA...
- Publication number 20170191913
- Publication date Jul 6, 2017
- International Business Machines Corporation
- Yann Astier
- G01 - MEASURING TESTING
Information Patent Application
Semiconductor manufactured nano-structures for microbe or virus tra...
- Publication number 20170191912
- Publication date Jul 6, 2017
- International Business Machines Corporation
- Yann Astier
- G01 - MEASURING TESTING
Information Patent Application
SEMICONDUCTOR MANUFACTURED NANO-STRUCTURES FOR MICROBE OR VIRUS TRA...
- Publication number 20170189570
- Publication date Jul 6, 2017
- International Business Machines Corporation
- Yann Astier
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
SEMICONDUCTOR MANUFACTURED NANO-STRUCTURES FOR MICROBE OR VIRUS TRA...
- Publication number 20170191106
- Publication date Jul 6, 2017
- International Business Machines Corporation
- Yann Astier
- C12 - BIOCHEMISTRY BEER SPIRITS WINE VINEGAR MICROBIOLOGY ENZYMOLOGY MUTATION...
Information Patent Application
JUNCTION BUTTING STRUCTURE USING NONUNIFORM TRENCH SHAPE
- Publication number 20170179257
- Publication date Jun 22, 2017
- GLOBALFOUNDRIES Inc.
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ASYMMETRIC SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME
- Publication number 20170076991
- Publication date Mar 16, 2017
- GLOBALFOUNDRIES INC.
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FIN ISOLATION BY A WELL TRAPPING FIN PORTION
- Publication number 20170040320
- Publication date Feb 9, 2017
- International Business Machines Corporation
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIAMOND SHAPED SOURCE DRAIN EPITAXY WITH UNDERLYING BUFFER LAYER
- Publication number 20160268413
- Publication date Sep 15, 2016
- GLOBALFOUNDRIES INC.
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED SOURCE/DRAIN STRUCTURE FOR TALL FINFET AND METHOD OF FORMA...
- Publication number 20160260833
- Publication date Sep 8, 2016
- lNTERNATIONAL BUSINESS MACHINES CORPORATION
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...
- Publication number 20160197186
- Publication date Jul 7, 2016
- International Business Machines Corporation
- ERIC C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Field Effect Transistors Having Silicon-Germaniu...
- Publication number 20160172361
- Publication date Jun 16, 2016
- Hwa-Sung Rhee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTIAL FIN ON OXIDE FOR IMPROVED ELECTRICAL ISOLATION OF RAISED AC...
- Publication number 20160079397
- Publication date Mar 17, 2016
- GLOBALFOUNDRIES INC.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...
- Publication number 20160035878
- Publication date Feb 4, 2016
- International Business Machines Corporation
- ERIC C. Harley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION BUTTING STRUCTURE USING NONUNIFORM TRENCH SHAPE
- Publication number 20150380488
- Publication date Dec 31, 2015
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET AND NANOWIRE SEMICONDUCTOR DEVICES WITH SUSPENDED CHANNEL RE...
- Publication number 20150364603
- Publication date Dec 17, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Henry K. Utomo

Person

Patents Grantslast 30 patents

Semiconductor manufactured nano-structures for microbe or virus tra...

FinFET with dielectric isolation after gate module for improved sou...

Semiconductor manufactured nano-structures for microbe or virus tra...

Embedded source/drain structure for tall FinFet and method of forma...

Contact via structures

Contact via structures

FinFET with dielectric isolation after gate module for improved sou...

Forming self-aligned contacts on pillar structures

Forming self-aligned contacts on pillar structures

Embedded source/drain structure for tall FinFET and method of forma...

Semiconductor manufactured nano-structures for microbe or virus tra...

Semiconductor manufactured nano-structures for microbe or virus tra...

Semiconductor manufactured nano-structures for microbe or virus tra...

Semiconductor fin isolation by a well trapping fin portion

FinFET with dielectric isolation after gate module for improved sou...

Forming self-aligned contacts on pillar structures

Asymmetric semiconductor device and method of forming same

Junction butting structure using nonuniform trench shape

FinFET with dielectric isolation after gate module for improved sou...

Fin-type field-effect transistors with strained channels

Methods of forming uniform and pitch independent fin recess

Embedded source/drain structure for tall finFET and method of forma...

Fin-type field-effect transistors with strained channels

Conformal buffer layer in source and drain regions of fin-type tran...

Junction butting structure using nonuniform trench shape

Diamond shaped source drain epitaxy with underlying buffer layer

FinFET and nanowire semiconductor devices with suspended channel re...

Forming fins of different semiconductor materials on the same subst...

Semiconductor fin isolation by a well trapping fin portion

Method for fabricating semiconductor device

Patents Applicationslast 30 patents

SPIN-ORBIT TORQUE MEMORY DEVICES

IN-SITU LOW TEMPERATURE DIELECTRIC DEPOSITION AND SELECTIVE TRIM OF...

SEMICONDUCTOR MANUFACTURED NANO-STRUCTURES FOR MICROBE OR VIRUS TRA...

CONTACT VIA STRUCTURES

CONTACT VIA STRUCTURES

FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...

EMBEDDED SOURCE/DRAIN STRUCTURE FOR TALL FINFET AND METHOD OF FORMA...

SEMICONDUCTOR MANUFACTURED NANO-STRUCTURES FOR MICROBE OR VIRUS TRA...

EMBEDDED SOURCE/DRAIN STRUCTURE FOR TALL FINFET AND METHOD OF FORMA...

EMBEDDED SOURCE/DRAIN STRUCTURE FOR TALL FINFET AND METHOD OF FORMA...

FORMING SELF-ALIGNED CONTACTS ON PILLAR STRUCTURES

FORMING SELF-ALIGNED CONTACTS ON PILLAR STRUCTURES

FORMING SELF-ALIGNED CONTACTS ON PILLAR STRUCTURES

FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...

FIN-TYPE FIELD-EFFECT TRANSISTORS WITH STRAINED CHANNELS

SEMICONDUCTOR MANUFACTURED NANO-STRUCTURES FOR MICROBE OR VIRUS TRA...

Semiconductor manufactured nano-structures for microbe or virus tra...

SEMICONDUCTOR MANUFACTURED NANO-STRUCTURES FOR MICROBE OR VIRUS TRA...

SEMICONDUCTOR MANUFACTURED NANO-STRUCTURES FOR MICROBE OR VIRUS TRA...

JUNCTION BUTTING STRUCTURE USING NONUNIFORM TRENCH SHAPE

ASYMMETRIC SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME

SEMICONDUCTOR FIN ISOLATION BY A WELL TRAPPING FIN PORTION

DIAMOND SHAPED SOURCE DRAIN EPITAXY WITH UNDERLYING BUFFER LAYER

EMBEDDED SOURCE/DRAIN STRUCTURE FOR TALL FINFET AND METHOD OF FORMA...

FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...

Methods of Forming Field Effect Transistors Having Silicon-Germaniu...

PARTIAL FIN ON OXIDE FOR IMPROVED ELECTRICAL ISOLATION OF RAISED AC...

FINFET WITH DIELECTRIC ISOLATION AFTER GATE MODULE FOR IMPROVED SOU...

JUNCTION BUTTING STRUCTURE USING NONUNIFORM TRENCH SHAPE

FINFET AND NANOWIRE SEMICONDUCTOR DEVICES WITH SUSPENDED CHANNEL RE...