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Her S. Chen
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Portland, OR, US
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last 30 patents
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Patent Grant
Method of making substrates for the growth of 3C-silicon carbide
Patent number
5,653,798
Issue date
Aug 5, 1997
Oregon Graduate Institute of Science and Technology
James D. Parsons
C30 - CRYSTAL GROWTH
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Patent Grant
Substrates for the growth of 3C-silicon carbide
Patent number
5,492,752
Issue date
Feb 20, 1996
Oregon Graduate Institute of Science and Technology
James D. Parsons
C30 - CRYSTAL GROWTH