Claims
- 1. A substrate suitable for the nucleation and growth of subgrain-free and DPB-free monocrystalline .beta.-SiC for semiconductor applications, the substrate comprising:
- a body of monocrystalline hexagonal material having a planar surface with a lattice parameter that is within .+-.5% of the lattice parameter of 6H.alpha.-SiC in the basal plane; and
- a body of monocrystalline cubic material epitaxially grown on the surface, the cubic material having a rock salt structure and a lattice parameter within .+-.5% of the lattice parameter of .beta.-SiC, the cubic material being without grain boundaries, subgrain boundaries, and double positioning boundaries.
- 2. The substrate of claim 1 wherein the surface of the body of monocrystalline hexagonal material consists substantially of 6H.alpha.-SiC.
- 3. The substrate of claim 1 wherein the cubic rock salt structure material is selected from the group consisting of TiC, ZrC, HfC, and TIN.
- 4. The substrate of claim 3 wherein the cubic material is TiC.
- 5. The substrate of claim 1 wherein the body of cubic rock salt structure material is a layer sufficiently thin that any resulting strain in the subsequently grown .beta.-SiC epitaxial layer will be insufficient to generate microtwins in the .beta.-SiC.
- 6. Monocrystalline .beta.-SiC suitable for semiconductor applications, the .beta.-SiC being made according the process comprising:
- providing a body of monocrystalline hexagonal material having a planar surface with a lattice parameter that is within .+-.5% of the lattice parameter of 6H.alpha.-SiC in the basal plane;
- growing a monocrystalline layer of a cubic material on the surface of the body to provide a planar cubic material surface, the cubic material having a rock salt structure and a lattice parameter within .+-.5% of the lattice parameter of .beta.-SiC; and
- nucleating and growing monocrystalline .beta.-SiC on the cubic material surface.
- 7. The monocrystalline .beta.-SiC of claim 6 wherein the surface of the body of monocrystalline hexagonal material consists substantially of 6H.alpha.-SiC.
- 8. The monocrystalline .beta.-SiC of claim 6 wherein the cubic material is selected from the group consisting of TiC, ZrC, HfC, and TiN.
- 9. The monocrystalline .beta.-SiC of claim 8 wherein the cubic material is TiC.
- 10. The monocrystalline .beta.-SiC of claim 6 wherein the growing of the cubic material comprises providing an epilayer having a thickness of at least 50 .ANG..
- 11. The monocrystalline .beta.-SiC of claim 6 wherein the growing of the cubic material is conducted epitaxially to provide a cubic material layer sufficiently thin that any strain in the .beta.-SiC is insufficient to generate microtwins in the .beta.-SiC.
- 12. A substrate suitable for the nucleation and growth of a body of subgrain-free and DPB-free monocrystalline .beta.-SiC for semiconductor applications, the substrate comprising:
- a body of monocrystalline hexagonal material having a planar surface with a lattice parameter that is within .+-.5% of the lattice parameter of 6H.alpha.-SiC in the basal plane; and
- a layer of monocrystalline cubic material epitaxially deposited on the surface, the cubic material having a rock salt structure and a lattice parameter within .+-.5% of the lattice parameter of .beta.-SiC, the layer being (a) without grain boundaries, subgrain boundaries, and double positioning boundaries, (b) at least 50 .ANG. thick, and (c) sufficiently thin that any strain imparted to an epitaxial layer of .beta.-SiC grown on the TiC will be insufficient to generate microtwins in the .beta.-SiC.
- 13. The substrate of claim 12 wherein the cubic rock salt structure material is selected from the group consisting of TiC, ZrC, HfC, and TIN.
- 14. A substrate suitable for the nucleation and growth of a body of subgrain-free and DPB-free monocrystalline .beta.-SiC for semiconductor applications, the substrate comprising:
- a body of monocrystalline 6H.alpha.-SiC having a planar surface; and
- a layer of monocrystalline TiC epitaxially deposited on the surface, the layer of TiC being (a) without grain boundaries, subgrain boundaries, and double positioning boundaries, (b) at least 50 .ANG. thick, and (c) sufficiently thin that any strain imparted to an epitaxial layer of .beta.-SiC grown on the TiC will be insufficient to generate microtwins in the .beta.-SiC.
- 15. A body of monocrystalline .beta.-SiC that has a surface with a diameter of at least 1.0 cm and that is suitable for semiconductor applications, the .beta.-SiC being made according to the process comprising:
- providing a body of monocrystalline hexagonal material having a planar surface with a lattice parameter that is within .+-.5% of the lattice parameter of 6H.alpha.-SiC in the basal plane;
- epitaxially depositing a layer of monocrystalline cubic material on the surface of the body to provide a planar cubic material surface, the cubic material having a rock salt structure and a lattice parameter within .+-.5% of the lattice parameter of .beta.-SiC, the layer having a thickness of at least 50 .ANG. and being sufficiently thin that any strain imparted to an epitaxial layer of .beta.-SiC grown on the TiC is insufficient to generate microtwins in the .beta.-SiC; and
- nucleating and growing a layer of monocrystalline .beta.-SiC on the cubic material surface.
- 16. The body of monocrystalline .beta.-SiC of claim 15 wherein the cubic rock salt structure material is selected from the group consisting of TiC, ZrC, HfC, and TiN.
- 17. A body of monocrystalline .beta.-SiC that has a surface with a diameter of at least 1.0 cm and that is suitable for semiconductor applications, the .beta.-SiC being made according to the process comprising:
- providing a body of monocrystalline 6H.alpha.-SiC having a planar surface;
- epitaxially depositing a layer of monocrystalline TiC on the surface of the body to provide a planar TiC surface, the layer having a thickness of at least 50 .ANG. and being sufficiently thin that any strain imparted to an epitaxial layer of .beta.-SiC grown on the TiC is insufficient to generate microtwins in the .beta.-SiC; and
- nucleating and growing a layer of monocrystalline .beta.-SiC on the TiC surface.
Parent Case Info
This is a continuation-in-part of application Ser. No. 07/986,999, filed Dec. 7, 1992 now abandoned.
US Referenced Citations (8)
Foreign Referenced Citations (3)
Number |
Date |
Country |
3613012 |
Nov 1986 |
DEX |
2010772 |
Jan 1990 |
JPX |
2199098 |
Aug 1990 |
JPX |
Continuation in Parts (1)
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Number |
Date |
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Parent |
986999 |
Dec 1992 |
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