Herbert Lei Ho

Person

Cornwall, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Virtual bulk in semiconductor on insulator technology
- Patent number 11,374,092
- Issue date Jun 28, 2022
- GLOBALFOUNDRIES U.S. Inc.
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with marker layer
- Patent number 11,217,685
- Issue date Jan 4, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Herbert Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor
- Patent number 11,145,725
- Issue date Oct 12, 2021
- GLOBALFOUNDRIES U.S. INC.
- Qizhi Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary transistor structures formed with the assistance of d...
- Patent number 11,063,140
- Issue date Jul 13, 2021
- GLOBALFOUNDRIES U.S. INC.
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Implant after through-silicon via (TSV) etch to getter mobile ions
- Patent number 10,170,337
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Christopher Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device employing a deep trench capacitor
- Patent number 10,083,967
- Issue date Sep 25, 2018
- GLOBALFOUNDRIES Inc.
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench metal insulator metal capacitor with oxygen gettering layer
- Patent number 9,911,597
- Issue date Mar 6, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench capacitor with metal plate
- Patent number 9,793,341
- Issue date Oct 17, 2017
- GLOBALFOUNDRIES Inc.
- Ali Khakifirooz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-volatile memory device employing a deep trench capacitor
- Patent number 9,754,945
- Issue date Sep 5, 2017
- GLOBALFOUNDRIES Inc.
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy gate structure for electrical isolation of a fin DRAM
- Patent number 9,741,722
- Issue date Aug 22, 2017
- International Business Machines Corporation
- John E. Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic random access memory cell with self-aligned strap
- Patent number 9,735,162
- Issue date Aug 15, 2017
- International Business Machines Corporation
- John E. Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench metal-insulator-metal capacitor with oxygen gettering layer
- Patent number 9,653,534
- Issue date May 16, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DT capacitor with silicide outer electrode and/or compressive stres...
- Patent number 9,653,535
- Issue date May 16, 2017
- International Business Machines Corporation
- Nicolas L. Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Controlling epitaxial growth over eDRAM deep trench and eDRAM so fo...
- Patent number 9,589,965
- Issue date Mar 7, 2017
- GLOBALFOUNDRIES Inc.
- Melissa A. Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic random access memory cell with self-aligned strap
- Patent number 9,564,443
- Issue date Feb 7, 2017
- International Business Machines Corporation
- John E. Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Changing effective work function using ion implantation during dual...
- Patent number 9,564,505
- Issue date Feb 7, 2017
- GLOBALFOUNDRIES Inc.
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy gate structure for electrical isolation of a fin DRAM
- Patent number 9,564,445
- Issue date Feb 7, 2017
- International Business Machines Corporation
- John E. Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DT capacitor with silicide outer electrode and/or compressive stres...
- Patent number 9,496,329
- Issue date Nov 15, 2016
- International Business Machines Corporation
- Nicolas L. Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dynamic random access memory cell employing trenches located betwee...
- Patent number 9,337,200
- Issue date May 10, 2016
- GLOBALFOUNDRIES Inc.
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
DT capacitor with silicide outer electrode and/or compressive stres...
- Patent number 9,299,766
- Issue date Mar 29, 2016
- International Business Machines Corporation
- Nicolas L. Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-oxide structure and method of forming
- Patent number 9,299,769
- Issue date Mar 29, 2016
- GLOBALFOUNDRIES Inc.
- John E. Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of forming enhanced array device isolation for...
- Patent number 9,257,433
- Issue date Feb 9, 2016
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-insulator-metal (MIM) capacitor with deep trench (DT) structu...
- Patent number 9,224,797
- Issue date Dec 29, 2015
- GLOBALFOUNDRIES Inc.
- John E. Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep trench MIM capacitor and moat isolation with epitaxial semicon...
- Patent number 9,171,848
- Issue date Oct 27, 2015
- GLOBALFOUNDRIES, INC.
- Thomas Walter Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-K and metal filled trench-type EDRAM capacitor with electrode...
- Patent number 9,059,194
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Colin J. Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded dynamic random access memory device and method
- Patent number 9,059,319
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-insulator (SOI) deep trench capacitor
- Patent number 9,059,322
- Issue date Jun 16, 2015
- International Business Machines Corporation
- John E. Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method of forming enhanced array device isolation for...
- Patent number 9,059,320
- Issue date Jun 16, 2015
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-insulator-metal (MIM) capacitor with deep trench (DT) structu...
- Patent number 8,946,045
- Issue date Feb 3, 2015
- International Business Machines Corporation
- John E. Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor-on-oxide structure and method of forming
- Patent number 8,877,603
- Issue date Nov 4, 2014
- International Business Machines Corporation
- John E. Barth
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
COMPLEMENTARY TRANSISTOR STRUCTURES FORMED WITH THE ASSISTANCE OF D...
- Publication number 20210098612
- Publication date Apr 1, 2021
- GLOBALFOUNDRIES U.S. Inc.
- John J. Pekarik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIRTUAL BULK IN SEMICONDUCTOR ON INSULATOR TECHNOLOGY
- Publication number 20210091180
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES INC.
- John J. PEKARIK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR
- Publication number 20210091189
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES INC.
- Qizhi LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HETEROJUNCTION BIPOLAR TRANSISTOR WITH MARKER LAYER
- Publication number 20210091214
- Publication date Mar 25, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Herbert HO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEEP TRENCH CAPACITORS WITH A DIFFUSION PAD
- Publication number 20180047807
- Publication date Feb 15, 2018
- GLOBALFOUNDRIES INC.
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICE EMPLOYING A DEEP TRENCH CAPACITOR
- Publication number 20170358581
- Publication date Dec 14, 2017
- GLOBALFOUNDRIES INC.
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH METAL INSULATOR METAL CAPACITOR WITH OXYGEN GETTERING LAYER
- Publication number 20170250073
- Publication date Aug 31, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IMPLANT AFTER THROUGH-SILICON VIA (TSV) ETCH TO GETTER MOBILE IONS
- Publication number 20170200620
- Publication date Jul 13, 2017
- International Business Machines Corporation
- Christopher Collins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...
- Publication number 20160181249
- Publication date Jun 23, 2016
- International Business Machines Corporation
- Guillaume D. BRIEND
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH METAL-INSULATOR-METAL CAPACITOR WITH OXYGEN GETTERING LAYER
- Publication number 20160181353
- Publication date Jun 23, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-VOLATILE MEMORY DEVICE EMPLOYING A DEEP TRENCH CAPACITOR
- Publication number 20160043088
- Publication date Feb 11, 2016
- International Business Machines Corporation
- Eduard A. Cartier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUMMY GATE STRUCTURE FOR ELECTRICAL ISOLATION OF A FIN DRAM
- Publication number 20160027789
- Publication date Jan 28, 2016
- International Business Machines Corporation
- John E. Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DYNAMIC RANDOM ACCESS MEMORY CELL WITH SELF-ALIGNED STRAP
- Publication number 20160027788
- Publication date Jan 28, 2016
- International Business Machines Corporation
- John E. Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DT CAPACITOR WITH SILICIDE OUTER ELECTRODE AND/OR COMPRESSIVE STRES...
- Publication number 20150357403
- Publication date Dec 10, 2015
- International Business Machines Corporation
- Nicolas L. Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DT CAPACITOR WITH SILICIDE OUTER ELECTRODE AND/OR COMPRESSIVE STRES...
- Publication number 20150357402
- Publication date Dec 10, 2015
- International Business Machines Corporation
- Nicolas L. Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF FORMING ENHANCED ARRAY DEVICE ISOLATION FOR...
- Publication number 20150279844
- Publication date Oct 1, 2015
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND METHOD OF FORMING ENHANCED ARRAY DEVICE ISOLATION FOR...
- Publication number 20150279843
- Publication date Oct 1, 2015
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DT CAPACITOR WITH SILICIDE OUTER ELECTRODE AND/OR COMPRESSIVE STRES...
- Publication number 20150279925
- Publication date Oct 1, 2015
- International Business Machines Corporation
- Nicolas L. Breil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE AND PROCESS TO DECOUPLE DEEP TRENCH CAPACITORS AND WELL I...
- Publication number 20150214244
- Publication date Jul 30, 2015
- International Business Machines Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DYNAMIC RANDOM ACCESS MEMORY CELL WITH SELF-ALIGNED STRAP
- Publication number 20150206884
- Publication date Jul 23, 2015
- International Business Machines Corporation
- John E. Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUMMY GATE STRUCTURE FOR ELECTRICAL ISOLATION OF A FIN DRAM
- Publication number 20150206885
- Publication date Jul 23, 2015
- International Business Machines Corporation
- John E. Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DYNAMIC RANDOM ACCESS MEMORY CELL EMPLOYING TRENCHES LOCATED BETWEE...
- Publication number 20150145010
- Publication date May 28, 2015
- International Business Corporation
- Herbert L. Ho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Deep Trench MIM Capacitor Moat Isolation with N+ Epitax...
- Publication number 20150145102
- Publication date May 28, 2015
- International Business Machines Corporation
- Thomas Walter Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-K AND METAL FILLED TRENCH-TYPE EDRAM CAPACITOR WITH ELECTRODE...
- Publication number 20150102463
- Publication date Apr 16, 2015
- International Business Machines Corporation
- Colin J. Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-INSULATOR-METAL (MIM) CAPACITOR WITH DEEP TRENCH (DT) STRUCTU...
- Publication number 20150021737
- Publication date Jan 22, 2015
- International Business Machines Corporation
- John E. Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANGING EFFECTIVE WORK FUNCTION USING ION IMPLANTATION DURING DUAL...
- Publication number 20140225199
- Publication date Aug 14, 2014
- International Business Machines Corporation
- Michael P. Chudzik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-OXIDE STRUCTURE AND METHOD OF FORMING
- Publication number 20140191359
- Publication date Jul 10, 2014
- International Business Machines Corporation
- John E. Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-K and Metal Filled Trench-Type EDRAM Capacitor with Electrode...
- Publication number 20140191366
- Publication date Jul 10, 2014
- International Business Machines Corporation
- Colin J. Brodsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR-ON-INSULATOR (SOI) DEEP TRENCH CAPACITOR
- Publication number 20140084411
- Publication date Mar 27, 2014
- International Business Machines Corporation
- John E. Barth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CREATING DEEP TRENCHES ON UNDERLYING SUBSTRATE
- Publication number 20140021585
- Publication date Jan 23, 2014
- International Business Machines Corporation
- Jennifer E. Appleyard
- H01 - BASIC ELECTRIC ELEMENTS

Herbert Lei Ho

Person

Patents Grantslast 30 patents

Virtual bulk in semiconductor on insulator technology

Heterojunction bipolar transistor with marker layer

Heterojunction bipolar transistor

Complementary transistor structures formed with the assistance of d...

Implant after through-silicon via (TSV) etch to getter mobile ions

Non-volatile memory device employing a deep trench capacitor

Trench metal insulator metal capacitor with oxygen gettering layer

Deep trench capacitor with metal plate

Non-volatile memory device employing a deep trench capacitor

Dummy gate structure for electrical isolation of a fin DRAM

Dynamic random access memory cell with self-aligned strap

Trench metal-insulator-metal capacitor with oxygen gettering layer

DT capacitor with silicide outer electrode and/or compressive stres...

Controlling epitaxial growth over eDRAM deep trench and eDRAM so fo...

Dynamic random access memory cell with self-aligned strap

Changing effective work function using ion implantation during dual...

Dummy gate structure for electrical isolation of a fin DRAM

DT capacitor with silicide outer electrode and/or compressive stres...

Dynamic random access memory cell employing trenches located betwee...

DT capacitor with silicide outer electrode and/or compressive stres...

Semiconductor-on-oxide structure and method of forming

Structure and method of forming enhanced array device isolation for...

Metal-insulator-metal (MIM) capacitor with deep trench (DT) structu...

Deep trench MIM capacitor and moat isolation with epitaxial semicon...

High-K and metal filled trench-type EDRAM capacitor with electrode...

Embedded dynamic random access memory device and method

Semiconductor-on-insulator (SOI) deep trench capacitor

Structure and method of forming enhanced array device isolation for...

Metal-insulator-metal (MIM) capacitor with deep trench (DT) structu...

Semiconductor-on-oxide structure and method of forming

Patents Applicationslast 30 patents

COMPLEMENTARY TRANSISTOR STRUCTURES FORMED WITH THE ASSISTANCE OF D...

VIRTUAL BULK IN SEMICONDUCTOR ON INSULATOR TECHNOLOGY

HETEROJUNCTION BIPOLAR TRANSISTOR

HETEROJUNCTION BIPOLAR TRANSISTOR WITH MARKER LAYER

DEEP TRENCH CAPACITORS WITH A DIFFUSION PAD

NON-VOLATILE MEMORY DEVICE EMPLOYING A DEEP TRENCH CAPACITOR

TRENCH METAL INSULATOR METAL CAPACITOR WITH OXYGEN GETTERING LAYER

IMPLANT AFTER THROUGH-SILICON VIA (TSV) ETCH TO GETTER MOBILE IONS

SEMICONDUCTOR STRUCTURES WITH DEEP TRENCH CAPACITOR AND METHODS OF...

TRENCH METAL-INSULATOR-METAL CAPACITOR WITH OXYGEN GETTERING LAYER

NON-VOLATILE MEMORY DEVICE EMPLOYING A DEEP TRENCH CAPACITOR

DUMMY GATE STRUCTURE FOR ELECTRICAL ISOLATION OF A FIN DRAM

DYNAMIC RANDOM ACCESS MEMORY CELL WITH SELF-ALIGNED STRAP

DT CAPACITOR WITH SILICIDE OUTER ELECTRODE AND/OR COMPRESSIVE STRES...

DT CAPACITOR WITH SILICIDE OUTER ELECTRODE AND/OR COMPRESSIVE STRES...

STRUCTURE AND METHOD OF FORMING ENHANCED ARRAY DEVICE ISOLATION FOR...

STRUCTURE AND METHOD OF FORMING ENHANCED ARRAY DEVICE ISOLATION FOR...

DT CAPACITOR WITH SILICIDE OUTER ELECTRODE AND/OR COMPRESSIVE STRES...

STRUCTURE AND PROCESS TO DECOUPLE DEEP TRENCH CAPACITORS AND WELL I...

DYNAMIC RANDOM ACCESS MEMORY CELL WITH SELF-ALIGNED STRAP

DUMMY GATE STRUCTURE FOR ELECTRICAL ISOLATION OF A FIN DRAM

DYNAMIC RANDOM ACCESS MEMORY CELL EMPLOYING TRENCHES LOCATED BETWEE...

Methods for Deep Trench MIM Capacitor Moat Isolation with N+ Epitax...

HIGH-K AND METAL FILLED TRENCH-TYPE EDRAM CAPACITOR WITH ELECTRODE...

METAL-INSULATOR-METAL (MIM) CAPACITOR WITH DEEP TRENCH (DT) STRUCTU...

CHANGING EFFECTIVE WORK FUNCTION USING ION IMPLANTATION DURING DUAL...

SEMICONDUCTOR-ON-OXIDE STRUCTURE AND METHOD OF FORMING

High-K and Metal Filled Trench-Type EDRAM Capacitor with Electrode...

SEMICONDUCTOR-ON-INSULATOR (SOI) DEEP TRENCH CAPACITOR

CREATING DEEP TRENCHES ON UNDERLYING SUBSTRATE