HIDEAKI KAWAHARA

Person

PLANO, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated channel diode
- Patent number 11,444,191
- Issue date Sep 13, 2022
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated trench capacitor
- Patent number 10,903,306
- Issue date Jan 26, 2021
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Medium high voltage MOSFET device
- Patent number 10,811,533
- Issue date Oct 20, 2020
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated channel diode
- Patent number 10,741,684
- Issue date Aug 11, 2020
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor with terminal trenches in terminal resurf regions
- Patent number 10,672,901
- Issue date Jun 2, 2020
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tilted photodetector cell
- Patent number 10,636,933
- Issue date Apr 28, 2020
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolated capacitor
- Patent number 10,629,674
- Issue date Apr 21, 2020
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical high-voltage MOS transistor
- Patent number 10,573,718
- Issue date Feb 25, 2020
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Medium voltage MOSFET device
- Patent number 10,553,717
- Issue date Feb 4, 2020
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple shielding trench gate FET
- Patent number 10,541,326
- Issue date Jan 21, 2020
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming trench capacitor having two dielectric layers an...
- Patent number 10,290,699
- Issue date May 14, 2019
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor with terminal trenches in terminal resurf regions
- Patent number 10,256,337
- Issue date Apr 9, 2019
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated trench capacitor
- Patent number 10,134,830
- Issue date Nov 20, 2018
- Texas Instruments Incorporated
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon epitaxy for high aspect ratio, substantially perpendicular...
- Patent number 9,905,638
- Issue date Feb 27, 2018
- Texas Instruments Incorporated
- Tatsuya Tominari
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple shielding trench gate FET
- Patent number 9,711,639
- Issue date Jul 18, 2017
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated termination for multiple trench field plate
- Patent number 9,673,317
- Issue date Jun 6, 2017
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench having thick dielectric selectively on bottom portion
- Patent number 9,653,342
- Issue date May 16, 2017
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical high-voltage MOS transistor and method of forming the same
- Patent number 9,525,035
- Issue date Dec 20, 2016
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated channel diode
- Patent number 9,484,450
- Issue date Nov 1, 2016
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
IC having failsafe fuse on field dielectric
- Patent number 9,455,222
- Issue date Sep 27, 2016
- Texas Instruments Incorporated
- Hideaki Kawahara
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Integrated termination for multiple trench field plate
- Patent number 9,450,082
- Issue date Sep 20, 2016
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Medium voltage MOSFET device
- Patent number 9,356,133
- Issue date May 31, 2016
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multiple shielding trench gate fet
- Patent number 9,299,830
- Issue date Mar 29, 2016
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with curved trench feature coupling termination trench to ac...
- Patent number 9,245,994
- Issue date Jan 26, 2016
- Texas Instruments Incorporated
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduction of polysilicon residue in a trench for polysilicon trench...
- Patent number 9,230,851
- Issue date Jan 5, 2016
- Texas Instruments Incorporated
- Simon John Molloy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction MOSFET with integrated channel diode
- Patent number 9,136,381
- Issue date Sep 15, 2015
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual RESURF trench field plate in vertical MOSFET
- Patent number 8,748,976
- Issue date Jun 10, 2014
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CHANNEL DIODE
- Publication number 20200373424
- Publication date Nov 26, 2020
- TEXAS INSTRUMENTS INCORPORATED
- CHRISTOPHER BOGUSLAW KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER TRANSISTOR WITH TERMINAL TRENCHES IN TERMINAL RESURF REGIONS
- Publication number 20190259868
- Publication date Aug 22, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH ISOLATED CAPACITOR
- Publication number 20190237535
- Publication date Aug 1, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Trench Capacitor
- Publication number 20190051721
- Publication date Feb 14, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE MASK LEVEL FORMING BOTH TOP-SIDE-CONTACT AND ISOLATION TRENCHES
- Publication number 20180358258
- Publication date Dec 13, 2018
- TEXAS INSTRUMENTS INCORPORATED
- ZACHARY K. LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER TRANSISTOR WITH TERMINAL TRENCHES IN TERMINAL RESURF REGIONS
- Publication number 20180226502
- Publication date Aug 9, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Trench Capacitor
- Publication number 20180076277
- Publication date Mar 15, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Binghua Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Trench Isolated Capacitor and Substrate Contact
- Publication number 20180061932
- Publication date Mar 1, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple Shielding Trench Gate FET
- Publication number 20170288052
- Publication date Oct 5, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH HAVING THICK DIELECTRIC SELECTIVELY ON BOTTOM PORTION
- Publication number 20170222041
- Publication date Aug 3, 2017
- TEXAS INSTRUMENTS INCORPORATED
- HIDEAKI KAWAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TILTED PHOTODETECTOR CELL
- Publication number 20170179329
- Publication date Jun 22, 2017
- TEXAS INSTRUMENTS INCORPORATED
- HIDEAKI KAWAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL HIGH-VOLTAGE MOS TRANSISTOR
- Publication number 20170062573
- Publication date Mar 2, 2017
- TEXAS INSTRUMENTS INCORPORATED
- CHRISTOPHER BOGUSLAW KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CHANNEL DIODE
- Publication number 20170025525
- Publication date Jan 26, 2017
- TEXAS INSTRUMENTS INCORPORATED
- CHRISTOPHER BOGUSLAW KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED TERMINATION FOR MULTIPLE TRENCH FIELD PLATE
- Publication number 20160359039
- Publication date Dec 8, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Hideaki KAWAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multiple Shielding Trench Gate FET
- Publication number 20160329423
- Publication date Nov 10, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Hideaki Kawahara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Medium High Voltage MOSFET Device
- Publication number 20160240653
- Publication date Aug 18, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Christopher Boguslaw KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Medium High Voltage MOSFET Device
- Publication number 20160240667
- Publication date Aug 18, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL HIGH-VOLTAGE MOS TRANSISTOR AND METHOD OF FORMING THE MOS...
- Publication number 20160163804
- Publication date Jun 9, 2016
- TEXAS INSTRUMENTS INCORPORATED
- CHRISTOPHER BOGUSLAW KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH HAVING THICK DIELECTRIC SELECTIVELY ON BOTTOM PORTION
- Publication number 20160141204
- Publication date May 19, 2016
- TEXAS INSTRUMENTS INCORPORATED
- HIDEAKI KAWAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED TERMINATION FOR MULTIPLE TRENCH FIELD PLATE
- Publication number 20150357461
- Publication date Dec 10, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Hideaki KAWAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CHANNEL DIODE
- Publication number 20150357459
- Publication date Dec 10, 2015
- TEXAS INSTRUMENTS INCORPORATED
- CHRISTOPHER BOGUSLAW KOCON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET WITH CURVED TRENCH FEATURE COUPLING TERMINATION TRENCH TO AC...
- Publication number 20140217497
- Publication date Aug 7, 2014
- TEXAS INSTRUMENTS INCORPORATED
- HIDEAKI KAWAHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCTION OF POLYSILICON RESIDUE IN A TRENCH FOR POLYSILICON TRENCH...
- Publication number 20140220761
- Publication date Aug 7, 2014
- TEXAS INSTRUMENTS INCORPORATED
- SIMON JOHN MOLLOY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEDIUM VOLTAGE MOSFET DEVICE
- Publication number 20130193502
- Publication date Aug 1, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Christopher Boguslaw KOCON
- H01 - BASIC ELECTRIC ELEMENTS

HIDEAKI KAWAHARA

Person

Patents Grantslast 30 patents

Integrated channel diode

Integrated trench capacitor

Medium high voltage MOSFET device

Integrated channel diode

Power transistor with terminal trenches in terminal resurf regions

Tilted photodetector cell

Trench isolated capacitor

Vertical high-voltage MOS transistor

Medium voltage MOSFET device

Multiple shielding trench gate FET

Method for forming trench capacitor having two dielectric layers an...

Power transistor with terminal trenches in terminal resurf regions

Integrated trench capacitor

Silicon epitaxy for high aspect ratio, substantially perpendicular...

Multiple shielding trench gate FET

Integrated termination for multiple trench field plate

Trench having thick dielectric selectively on bottom portion

Vertical high-voltage MOS transistor and method of forming the same

Integrated channel diode

IC having failsafe fuse on field dielectric

Integrated termination for multiple trench field plate

Medium voltage MOSFET device

Multiple shielding trench gate fet

MOSFET with curved trench feature coupling termination trench to ac...

Reduction of polysilicon residue in a trench for polysilicon trench...

Super junction MOSFET with integrated channel diode

Dual RESURF trench field plate in vertical MOSFET

Patents Applicationslast 30 patents

INTEGRATED CHANNEL DIODE

POWER TRANSISTOR WITH TERMINAL TRENCHES IN TERMINAL RESURF REGIONS

TRENCH ISOLATED CAPACITOR

Integrated Trench Capacitor

SINGLE MASK LEVEL FORMING BOTH TOP-SIDE-CONTACT AND ISOLATION TRENCHES

POWER TRANSISTOR WITH TERMINAL TRENCHES IN TERMINAL RESURF REGIONS

Integrated Trench Capacitor

Method for Forming Trench Isolated Capacitor and Substrate Contact

Multiple Shielding Trench Gate FET

TRENCH HAVING THICK DIELECTRIC SELECTIVELY ON BOTTOM PORTION

TILTED PHOTODETECTOR CELL

VERTICAL HIGH-VOLTAGE MOS TRANSISTOR

INTEGRATED CHANNEL DIODE

INTEGRATED TERMINATION FOR MULTIPLE TRENCH FIELD PLATE

Multiple Shielding Trench Gate FET

Medium High Voltage MOSFET Device

Medium High Voltage MOSFET Device

VERTICAL HIGH-VOLTAGE MOS TRANSISTOR AND METHOD OF FORMING THE MOS...

TRENCH HAVING THICK DIELECTRIC SELECTIVELY ON BOTTOM PORTION

INTEGRATED TERMINATION FOR MULTIPLE TRENCH FIELD PLATE

INTEGRATED CHANNEL DIODE

MOSFET WITH CURVED TRENCH FEATURE COUPLING TERMINATION TRENCH TO AC...

REDUCTION OF POLYSILICON RESIDUE IN A TRENCH FOR POLYSILICON TRENCH...

MEDIUM VOLTAGE MOSFET DEVICE