Hideaki Nii

Person

3-7, Shiomidai, Isogo-ku, Yokohama-shi, Kanagawa-ken, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 7,009,249
- Issue date Mar 7, 2006
- Kabushiki Kaisha Toshiba
- Hideaki Nii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device formed in a semiconductor layer provided on an...
- Patent number 6,693,328
- Issue date Feb 17, 2004
- Kabushiki Kaisha Toshiba
- Shigeru Kawanaka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,633,069
- Issue date Oct 14, 2003
- Kabushiki Kaisha Toshiba
- Hideaki Nii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 6,566,713
- Issue date May 20, 2003
- Kabushiki Kaisha Toshiba
- Hideaki Nii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor formed on an insulating layer
- Patent number 6,376,897
- Issue date Apr 23, 2002
- Kabushiki Kaisha Toshiba
- Takashi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a lateral bipolar transistor
- Patent number 6,174,779
- Issue date Jan 16, 2001
- Kabushiki Kaisha Toshiba
- Tomoaki Shino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 5,933,719
- Issue date Aug 3, 1999
- Kabushiki Kaisha Toshiba
- Hideaki Nii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with solid phase diffusion source
- Patent number 5,903,027
- Issue date May 11, 1999
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having solid phase diffusion sources
- Patent number 5,898,203
- Issue date Apr 27, 1999
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,766,965
- Issue date Jun 16, 1998
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with solid phase diffusion source
- Patent number 5,698,881
- Issue date Dec 16, 1997
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,434,440
- Issue date Jul 18, 1995
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20040159949
- Publication date Aug 19, 2004
- Hideaki Nii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20030201488
- Publication date Oct 30, 2003
- KABUSHIKI KAISHA TOSHIBA
- Hideaki Nii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20020149062
- Publication date Oct 17, 2002
- HIDEAKI NII
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and maufacturing method thereof
- Publication number 20020036321
- Publication date Mar 28, 2002
- KABUSHIKI KAISHA TOSHIBA
- Hideaki Nii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR FORMED ON AN INSULATING LAYER
- Publication number 20010054746
- Publication date Dec 27, 2001
- TAKASHI YAMADA
- H01 - BASIC ELECTRIC ELEMENTS

Hideaki Nii

Person

Patents Grantslast 30 patents

Semiconductor device and manufacturing method thereof

Semiconductor device formed in a semiconductor layer provided on an...

Semiconductor device

Semiconductor device and manufacturing method thereof

Lateral bipolar transistor formed on an insulating layer

Method for manufacturing a lateral bipolar transistor

Method of manufacturing a semiconductor device

MOSFET with solid phase diffusion source

Semiconductor device having solid phase diffusion sources

Semiconductor device and method of manufacturing the same

MOSFET with solid phase diffusion source

Semiconductor device and method of manufacturing the same

Patents Applicationslast 30 patents

Semiconductor device and method of manufacturing the same

Semiconductor device and manufacturing method thereof

SEMICONDUCTOR DEVICE

Semiconductor device and maufacturing method thereof

LATERAL BIPOLAR TRANSISTOR FORMED ON AN INSULATING LAYER