Hideshi MIYAJIMA

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Somers, NY, US

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Patents Grantslast 30 patents

Information Patent Grant
Method to reduce depth delta between dense and wide features in dua...
- Patent number 8,822,342
- Issue date Sep 2, 2014
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Ravi Prakash Srivastava
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device
- Patent number 7,795,142
- Issue date Sep 14, 2010
- Kabushiki Kaisha Toshiba
- Hideaki Masuda
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
OPTICALLY REACTIVE MASKING
- Publication number 20140054754
- Publication date Feb 27, 2014
- Toshiba America Electronic Components, Inc
- Tadayoshi Watanabe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTION OF UNDER-LAYER CONDUCTIVE PATHWAY
- Publication number 20140027914
- Publication date Jan 30, 2014
- Toshiba America Electronic Components, Inc
- Hideyuki Tomizawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR INTEGRATION OF METAL/DIELECTRIC INTERCONNECTS
- Publication number 20130171819
- Publication date Jul 4, 2013
- Toshiba America Electronic Components, Inc
- Hideshi Miyajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO REDUCE DEPTH DELTA BETWEEN DENSE AND WIDE FEATURES IN DUA...
- Publication number 20120168957
- Publication date Jul 5, 2012
- GLOBALFOUNDRIES SINGAPORE PTE. LTD.
- Ravi Prakash SRIVASTAVA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20120139033
- Publication date Jun 7, 2012
- Toshiba America Electronic Components, Inc
- Hiroyuki Yamasaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE
- Publication number 20090203201
- Publication date Aug 13, 2009
- Hideaki MASUDA
- H01 - BASIC ELECTRIC ELEMENTS