HIDEYUKI NOSHIRO

Person

KANAGAWA, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Resistance change device, manufacturing method for the same, and st...
- Patent number 11,328,769
- Issue date May 10, 2022
- Fujitsu Limited
- Hideyuki Noshiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 9,218,869
- Issue date Dec 22, 2015
- Fujitsu Limited
- Hideyuki Noshiro
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance element and semiconductor memory device
- Patent number 8,750,034
- Issue date Jun 10, 2014
- Fujitsu Limited
- Hideyuki Noshiro
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing resistance change element
- Patent number 8,533,938
- Issue date Sep 17, 2013
- Fujitsu Limited
- Hideyuki Noshiro
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Composite resistance variable element and method for manufacturing...
- Patent number 8,482,953
- Issue date Jul 9, 2013
- Fujitsu Limited
- Hideyuki Noshiro
- G11 - INFORMATION STORAGE
Information Patent Grant
Variable resistance device, method for manufacturing variable resis...
- Patent number 8,350,244
- Issue date Jan 8, 2013
- Fujitsu Limited
- Hideyuki Noshiro
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistance change element and method of manufacturing the same
- Patent number 8,227,782
- Issue date Jul 24, 2012
- Fujitsu Limited
- Hideyuki Noshiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resistance change element and method of manufacturing the same
- Patent number 8,106,377
- Issue date Jan 31, 2012
- Fujitsu Limited
- Hideyuki Noshiro
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistance memory element, method of manufacturing resistance memor...
- Patent number 8,102,003
- Issue date Jan 24, 2012
- Fujitsu Limited
- Chikako Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 7,038,264
- Issue date May 2, 2006
- Fujitsu Limited
- Katsuyoshi Matsuura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 7,029,984
- Issue date Apr 18, 2006
- Fujitsu Limited
- Yoshimasa Horii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing ferroelectric capacitor using a sintering a...
- Patent number 6,812,041
- Issue date Nov 2, 2004
- Fujitsu Limited
- Kazuaki Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric semiconductor memory device and a fabrication process...
- Patent number 6,777,287
- Issue date Aug 17, 2004
- Fujitsu Limited
- Soichiro Ozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric semiconductor memory device and a fabrication process...
- Patent number 6,617,626
- Issue date Sep 9, 2003
- Fujitsu Limited
- Soichiro Ozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor capacitive device
- Patent number 6,515,843
- Issue date Feb 4, 2003
- Fujitsu Limited
- Masaaki Nakabayashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device having a ferroelectric capacitor and a fabrica...
- Patent number 6,495,412
- Issue date Dec 17, 2002
- Fujitsu Limited
- Sha Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,291,291
- Issue date Sep 18, 2001
- Fujitsu Limited
- Hideyuki Noshiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film deposition method, capacitor device and method for fabric...
- Patent number 6,271,077
- Issue date Aug 7, 2001
- Fujitsu Limited
- Masaaki Nakabayashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,060,736
- Issue date May 9, 2000
- Fujitsu Limited
- Hideyuki Noshiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film deposition method, capacitor device and method for fabric...
- Patent number 5,874,364
- Issue date Feb 23, 1999
- Fujitsu Limited
- Masaaki Nakabayashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for patterning a metal film
- Patent number 5,679,213
- Issue date Oct 21, 1997
- Fujitsu Limited
- Hideyuki Noshiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming oxide superconductor patterns
- Patent number 5,248,663
- Issue date Sep 28, 1993
- Fujitsu Limited
- Hideyuki Noshiro
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
VARIABLE RESISTANCE ELEMENT, METHOD FOR MANUFACTURING SAME, AND STO...
- Publication number 20200411760
- Publication date Dec 31, 2020
- Fujitsu Limited
- Tomochika KURITA
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTANCE CHANGE DEVICE, MANUFACTURING METHOD FOR THE SAME, AND ST...
- Publication number 20200066338
- Publication date Feb 27, 2020
- Fujitsu Limited
- Hideyuki Noshiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20140340960
- Publication date Nov 20, 2014
- Fujitsu Limited
- Hideyuki Noshiro
- G11 - INFORMATION STORAGE
Information Patent Application
DETERMINING DEVICE AND DETERMINING METHOD
- Publication number 20140003137
- Publication date Jan 2, 2014
- Fujitsu Limited
- Hideyuki Noshiro
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE ELEMENT AND SEMICONDUCTOR MEMORY DEVICE
- Publication number 20130155764
- Publication date Jun 20, 2013
- Fujitsu Limited
- Hideyuki Noshiro
- G11 - INFORMATION STORAGE
Information Patent Application
COMPOSITE RESISTANCE VARIABLE ELEMENT AND METHOD FOR MANUFACTURING...
- Publication number 20110280064
- Publication date Nov 17, 2011
- FUJITSU LIMITED
- Hideyuki Noshiro
- G11 - INFORMATION STORAGE
Information Patent Application
RESISTANCE CHANGE ELEMENT AND METHOD OF MANUFACTURING THE SAME
- Publication number 20100252796
- Publication date Oct 7, 2010
- Fujitsu Limited
- Hideyuki Noshiro
- G11 - INFORMATION STORAGE
Information Patent Application
VARIABLE RESISTANCE DEVICE, METHOD FOR MANUFACTURING VARIABLE RESIS...
- Publication number 20100230655
- Publication date Sep 16, 2010
- Fujitsu Limited
- Hideyuki Noshiro
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD OF MANUFACTURING RESISTANCE CHANGE ELEMENT
- Publication number 20100083487
- Publication date Apr 8, 2010
- Fujitsu Limited
- Hideyuki Noshiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTANCE CHANGE ELEMENT AND METHOD OF MANUFACTURING THE SAME
- Publication number 20090257271
- Publication date Oct 15, 2009
- Fujitsu Limited
- Hideyuki Noshiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RESISTANCE MEMORY ELEMENT, METHOD OF MANUFACTURING RESISTANCE MEMOR...
- Publication number 20090236581
- Publication date Sep 24, 2009
- Fujitsu Limited
- Chikako Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Resistance Storage Element and Method for Manufacturing the Same
- Publication number 20090230391
- Publication date Sep 17, 2009
- Fujitsu Limited
- Hideyuki Noshiro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for fabricating semiconductor device
- Publication number 20050215006
- Publication date Sep 29, 2005
- FUJITSU LIMITED
- Yoshimasa Horii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20050161716
- Publication date Jul 28, 2005
- FUJITSU LIMITED
- Katsuyoshi Matsuura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing ferroelectric capacitor
- Publication number 20030232479
- Publication date Dec 18, 2003
- FUJITSU LIMITED
- Kazuaki Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric semiconductor memory device and a fabrication process...
- Publication number 20030205743
- Publication date Nov 6, 2003
- Soichiro Ozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric semiconductor memory device and a fabrication process...
- Publication number 20020158278
- Publication date Oct 31, 2002
- Soichiro Ozawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
09186692 A SEMICONDUCTOR CAPACITIVE DEVICE
- Publication number 20020071239
- Publication date Jun 13, 2002
- MASAAKI NAKABAYASHI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

HIDEYUKI NOSHIRO

Person

Patents Grantslast 30 patents

Resistance change device, manufacturing method for the same, and st...

Memory device

Magnetoresistance element and semiconductor memory device

Method of manufacturing resistance change element

Composite resistance variable element and method for manufacturing...

Variable resistance device, method for manufacturing variable resis...

Resistance change element and method of manufacturing the same

Resistance change element and method of manufacturing the same

Resistance memory element, method of manufacturing resistance memor...

Semiconductor device and method for manufacturing the same

Method for fabricating semiconductor device

Method of manufacturing ferroelectric capacitor using a sintering a...

Ferroelectric semiconductor memory device and a fabrication process...

Ferroelectric semiconductor memory device and a fabrication process...

Semiconductor capacitive device

Semiconductor device having a ferroelectric capacitor and a fabrica...

Semiconductor device and method of manufacturing the same

Thin film deposition method, capacitor device and method for fabric...

Semiconductor device and method of manufacturing the same

Thin film deposition method, capacitor device and method for fabric...

Method for patterning a metal film

Method of forming oxide superconductor patterns

Patents Applicationslast 30 patents

VARIABLE RESISTANCE ELEMENT, METHOD FOR MANUFACTURING SAME, AND STO...

RESISTANCE CHANGE DEVICE, MANUFACTURING METHOD FOR THE SAME, AND ST...

MEMORY DEVICE

DETERMINING DEVICE AND DETERMINING METHOD

MAGNETORESISTANCE ELEMENT AND SEMICONDUCTOR MEMORY DEVICE

COMPOSITE RESISTANCE VARIABLE ELEMENT AND METHOD FOR MANUFACTURING...

RESISTANCE CHANGE ELEMENT AND METHOD OF MANUFACTURING THE SAME

VARIABLE RESISTANCE DEVICE, METHOD FOR MANUFACTURING VARIABLE RESIS...

METHOD OF MANUFACTURING RESISTANCE CHANGE ELEMENT

RESISTANCE CHANGE ELEMENT AND METHOD OF MANUFACTURING THE SAME

RESISTANCE MEMORY ELEMENT, METHOD OF MANUFACTURING RESISTANCE MEMOR...

Resistance Storage Element and Method for Manufacturing the Same

Method for fabricating semiconductor device

Semiconductor device and method for manufacturing the same

Method of manufacturing ferroelectric capacitor

Ferroelectric semiconductor memory device and a fabrication process...

Ferroelectric semiconductor memory device and a fabrication process...

09186692 A SEMICONDUCTOR CAPACITIVE DEVICE