Hijzen Erwin

Person

Blanden, BE

People

Patents Grantslast 30 patents

Information Patent Grant
Sealing structure and method of manufacturing the same
- Patent number 8,592,228
- Issue date Nov 26, 2013
- NXP, B.V.
- Johannes Donkers
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Grant
Semiconductor device and method of manufacture thereof
- Patent number 8,476,675
- Issue date Jul 2, 2013
- NXP B.V.
- Philippe Meunier-Beillard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a bipolar transistor semiconductor device a...
- Patent number 8,431,966
- Issue date Apr 30, 2013
- NXP B.V.
- Philippe Meunier-Beillard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing such a device
- Patent number 8,373,236
- Issue date Feb 12, 2013
- NXP, B.V.
- Erwin Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device and semiconductor de...
- Patent number 8,173,511
- Issue date May 8, 2012
- NXP B.V.
- Joost Melai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a bipolar transistor and bipolar transistor...
- Patent number 8,133,791
- Issue date Mar 13, 2012
- NXP B.V.
- Erwin B. Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with low buried resistance and method of manuf...
- Patent number 7,956,399
- Issue date Jun 7, 2011
- NXP B.V.
- Wibo Daniel Van Noort
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of making bipolar transistor
- Patent number 7,939,416
- Issue date May 10, 2011
- NXP B.V.
- Sebastien Nuttinck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,915,709
- Issue date Mar 29, 2011
- NXP B.V.
- Godefridus Adrianus Maria Hurkx
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing a semiconductor device and semiconductor de...
- Patent number 7,867,864
- Issue date Jan 11, 2011
- NXP B.V.
- Sebastien Nuttinck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,868,424
- Issue date Jan 11, 2011
- NXP B.V.
- Godefridus Adrianus Maria Hurkx
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Trench MOSFET
- Patent number 7,696,599
- Issue date Apr 13, 2010
- NXP B.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral field-effect transistor having an insulated trench gate ele...
- Patent number 7,671,440
- Issue date Mar 2, 2010
- NXP B.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacture
- Patent number 7,671,390
- Issue date Mar 2, 2010
- NXP B.V.
- Jan Sonsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing thereof
- Patent number 7,659,169
- Issue date Feb 9, 2010
- NXP B.V.
- Radu Surdeanu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOS structure
- Patent number 7,629,647
- Issue date Dec 8, 2009
- NXP B.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a heterojunction bipolar transistor
- Patent number 7,618,858
- Issue date Nov 17, 2009
- NXP B.V.
- Philippe Meunier-Beillard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a bipolar transistor
- Patent number 7,605,027
- Issue date Oct 20, 2009
- NXP B.V.
- Philippe Meunier-Beillard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire semiconductor device
- Patent number 7,538,337
- Issue date May 26, 2009
- NXP B.V.
- Erwin A. Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacture of a trench-gate semiconductor device
- Patent number 7,485,534
- Issue date Feb 3, 2009
- NXP B.V.
- Erwin A. Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench semiconductor device and method of manufacturing it
- Patent number 7,394,144
- Issue date Jul 1, 2008
- NXP B.V.
- Christelle Rochefort
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacture of trench-gate semiconductor devices
- Patent number 7,332,398
- Issue date Feb 19, 2008
- NXP B.V.
- Michael A. A. In't Zandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical insulated gate transistor and manufacturing method
- Patent number 7,262,460
- Issue date Aug 28, 2007
- NXP B.V.
- Jurriaan Schmitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate power semiconductor devices
- Patent number 7,235,842
- Issue date Jun 26, 2007
- NXP B.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of maufacturing a trench-gate semiconductor device
- Patent number 7,199,010
- Issue date Apr 3, 2007
- NXP B.V.
- Erwin A. Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination in MOS transistors
- Patent number 7,160,793
- Issue date Jan 9, 2007
- NXP B.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched semiconductor devices and their manufacture
- Patent number 7,033,889
- Issue date Apr 25, 2006
- Koninklijke Philips Electronics N.V.
- Erwin A. Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched semiconductor devices and their manufacture
- Patent number 6,956,264
- Issue date Oct 18, 2005
- Koninklijke Philips Electronics N.V.
- Erwin A. Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination in MOS transistors
- Patent number 6,936,890
- Issue date Aug 30, 2005
- Koninklijke Philips Electronics N.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Edge termination in a trench-gate MOSFET
- Patent number 6,833,583
- Issue date Dec 21, 2004
- Koninklijke Philips Electronics N.V.
- Michael A. A. In't Zandt
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160043708
- Publication date Feb 11, 2016
- NXP B.V.
- Anco Heringa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR SEMICONDUCTOR DEVICE A...
- Publication number 20110304019
- Publication date Dec 15, 2011
- NXP B.V.
- Pilippe Meunier-Beillard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF
- Publication number 20110186841
- Publication date Aug 4, 2011
- NXP B.V.
- Philippe Meunier-Bellard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING BIPOLAR TRANSISTOR
- Publication number 20110034001
- Publication date Feb 10, 2011
- NXP B.V.
- Sebastien Nuttinck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DE...
- Publication number 20100289022
- Publication date Nov 18, 2010
- NXP B.V.
- Joost Melai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE
- Publication number 20100237434
- Publication date Sep 23, 2010
- NXP B.V.
- Wibo D. Van Noort
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Method of Manufacturing a Bipolar Transistor and Bipolar Transistor...
- Publication number 20100068863
- Publication date Mar 18, 2010
- NXP B.V.
- Erwin Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A SEALING STRUCTURE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20100052081
- Publication date Mar 4, 2010
- NXP, B.V.
- Johannes Donkers
- B81 - MICRO-STRUCTURAL TECHNOLOGY
Information Patent Application
METHOD OF FABRICATING A BIPOLAR TRANSISTOR
- Publication number 20100047987
- Publication date Feb 25, 2010
- NXP B.V.
- Johannes Josephus Theodorus Marin Donkers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE
- Publication number 20090200577
- Publication date Aug 13, 2009
- NXP B.V.
- Erwin Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacturing Such a Device
- Publication number 20090166753
- Publication date Jul 2, 2009
- NXP B.V.
- Erwin Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DE...
- Publication number 20090159938
- Publication date Jun 25, 2009
- NXP B.V.
- Sebastien Nuttinck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING A HETEROJUNCTION BIPOLAR TRANSISTOR
- Publication number 20090075446
- Publication date Mar 19, 2009
- NXP B.V.
- Philippe Meunier-Beillard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Method of Manufacturing the Same
- Publication number 20080315361
- Publication date Dec 25, 2008
- Godefridus Adrianus Maria Hurkx
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method of Fabricating a Bipolar Transistor
- Publication number 20080233688
- Publication date Sep 25, 2008
- NXP B.V.
- Philippe Meunier-Beillard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral Field-Effect Transistor Having an Insulated Trench Gate Ele...
- Publication number 20080203473
- Publication date Aug 28, 2008
- Koninklijke Philips Electronics N.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing a Semiconductor Device and Semiconductor De...
- Publication number 20080194069
- Publication date Aug 14, 2008
- Koninklijke Philips Electronics N.V.
- Radu Surdeanu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nanowire Semiconductor Device
- Publication number 20080029909
- Publication date Feb 7, 2008
- Erwin A. Hijzen
- B82 - NANO-TECHNOLOGY
Information Patent Application
Semiconductor Device and Method for Manufacture
- Publication number 20070246754
- Publication date Oct 25, 2007
- Jan Sonsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical Semiconductor Devices and Methods of Manufacturing Such De...
- Publication number 20070228496
- Publication date Oct 4, 2007
- Koninklijke Philips Electronics N.V.
- Christelle Rochefort
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench Semiconductor Device and Method of Manufacturing it
- Publication number 20070222019
- Publication date Sep 27, 2007
- Koninklijke Philips Electronics N.V.
- Christelle Rochefort
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench insulated gate field effect transistor
- Publication number 20070126055
- Publication date Jun 7, 2007
- Koninklijke Philips Electronics N.V.
- Raymond J. E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device comprising a pn-heterojunction
- Publication number 20070120254
- Publication date May 31, 2007
- KONINKLIJKE PHILIPS ELECTRONICS N.C.
- Godefridus Adrianus Maria Hurkx
- B82 - NANO-TECHNOLOGY
Information Patent Application
Manufacture of trench-gate semiconductor devices
- Publication number 20060205222
- Publication date Sep 14, 2006
- Michael A. A. In't Zandt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated gate power semiconductor devices
- Publication number 20060189063
- Publication date Aug 24, 2006
- Koninklijke Philips Electronics N.V.
- Raymond J.E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical insulated gate transistor and manufacturing method
- Publication number 20060049453
- Publication date Mar 9, 2006
- Koninklijke Philips Electronics N.V.
- Jurriaan Schmitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacture of a trench-gate semiconductor device
- Publication number 20060024891
- Publication date Feb 2, 2006
- KONINKLJKE PHILIPS ELECRONICS, N.V.
- Erwin A Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a trench-gate semiconductor device
- Publication number 20060017097
- Publication date Jan 26, 2006
- Koninklijke Philips Electronics, N.V.
- Erwin A Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trenched semiconductor devices and their manufacture
- Publication number 20060008991
- Publication date Jan 12, 2006
- Erwin A. Hijzen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Edge termination in MOS transistors
- Publication number 20050156232
- Publication date Jul 21, 2005
- Raymond J.E. Hueting
- H01 - BASIC ELECTRIC ELEMENTS

Hijzen Erwin

Person

Patents Grantslast 30 patents

Sealing structure and method of manufacturing the same

Semiconductor device and method of manufacture thereof

Method of manufacturing a bipolar transistor semiconductor device a...

Semiconductor device and method of manufacturing such a device

Method of manufacturing a semiconductor device and semiconductor de...

Method of manufacturing a bipolar transistor and bipolar transistor...

Semiconductor device with low buried resistance and method of manuf...

Method of making bipolar transistor

Semiconductor device and method of manufacturing the same

Method of manufacturing a semiconductor device and semiconductor de...

Semiconductor device and method of manufacturing the same

Trench MOSFET

Lateral field-effect transistor having an insulated trench gate ele...

Semiconductor device and method for manufacture

Semiconductor device and method of manufacturing thereof

Trench MOS structure

Method of fabricating a heterojunction bipolar transistor

Method of fabricating a bipolar transistor

Nanowire semiconductor device

Method of manufacture of a trench-gate semiconductor device

Trench semiconductor device and method of manufacturing it

Manufacture of trench-gate semiconductor devices

Vertical insulated gate transistor and manufacturing method

Insulated gate power semiconductor devices

Method of maufacturing a trench-gate semiconductor device

Edge termination in MOS transistors

Trenched semiconductor devices and their manufacture

Trenched semiconductor devices and their manufacture

Edge termination in MOS transistors

Edge termination in a trench-gate MOSFET

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING A BIPOLAR TRANSISTOR SEMICONDUCTOR DEVICE A...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF

METHOD OF MAKING BIPOLAR TRANSISTOR

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DE...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE

Method of Manufacturing a Bipolar Transistor and Bipolar Transistor...

A SEALING STRUCTURE AND METHOD OF MANUFACTURING THE SAME

METHOD OF FABRICATING A BIPOLAR TRANSISTOR

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE

Semiconductor Device and Method of Manufacturing Such a Device

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DE...

METHOD OF FABRICATING A HETEROJUNCTION BIPOLAR TRANSISTOR

Semiconductor Device and Method of Manufacturing the Same

Method of Fabricating a Bipolar Transistor

Lateral Field-Effect Transistor Having an Insulated Trench Gate Ele...

Method of Manufacturing a Semiconductor Device and Semiconductor De...

Nanowire Semiconductor Device

Semiconductor Device and Method for Manufacture

Vertical Semiconductor Devices and Methods of Manufacturing Such De...

Trench Semiconductor Device and Method of Manufacturing it

Trench insulated gate field effect transistor

Semiconductor device comprising a pn-heterojunction

Manufacture of trench-gate semiconductor devices

Insulated gate power semiconductor devices

Vertical insulated gate transistor and manufacturing method

Method of manufacture of a trench-gate semiconductor device

Method of manufacturing a trench-gate semiconductor device

Trenched semiconductor devices and their manufacture

Edge termination in MOS transistors