Hiroshi Amano

Person

Nagoya, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of producing ultraviolet laser diode, and ultraviolet laser...
- Patent number 12,126,141
- Issue date Oct 22, 2024
- Asahi Kasei Kabushiki Kaisha
- Ziyi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor phase epitaxial growth device
- Patent number 12,009,206
- Issue date Jun 11, 2024
- National University Corporation Nagoya University
- Shugo Nitta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing optical device and optical device
- Patent number 11,909,172
- Issue date Feb 20, 2024
- Asahi Kasei Kabushiki Kaisha
- Ziyi Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride vapor phase epitaxy apparatus used in vapor phase e...
- Patent number 11,869,767
- Issue date Jan 9, 2024
- NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH...
- Shugo Nitta
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vapor phase epitaxial growth device
- Patent number 11,591,717
- Issue date Feb 28, 2023
- National University Corporation Nagoya University
- Shugo Nitta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vapor phase epitaxial growth device
- Patent number 11,371,165
- Issue date Jun 28, 2022
- NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH...
- Shugo Nitta
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Manufacturing method for group III nitride semiconductor substrate...
- Patent number 10,777,704
- Issue date Sep 15, 2020
- Sumco Corporation
- Koji Matsumoto
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Radical generator and molecular beam epitaxy apparatus
- Patent number 10,577,719
- Issue date Mar 3, 2020
- National University Corporation Nagoya University
- Masaru Hori
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production method for group III nitride semiconductor and group III...
- Patent number 9,837,494
- Issue date Dec 5, 2017
- Toyoda Gosei Co., Ltd.
- Koji Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radical generator and molecular beam epitaxy apparatus
- Patent number 9,447,518
- Issue date Sep 20, 2016
- National University Corporation Nagoya University
- Masaru Hori
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method for producing a template for epitaxial growth having a sapph...
- Patent number 9,412,586
- Issue date Aug 9, 2016
- Soko Kagaku Co., Ltd.
- Hiroshi Amano
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing group III nitride semiconductor
- Patent number 9,214,339
- Issue date Dec 15, 2015
- Toyoda Gosei Co., Ltd.
- Koji Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing Group III nitride semiconductor and Group III...
- Patent number 9,209,021
- Issue date Dec 8, 2015
- Toyoda Gosei Co., Ltd.
- Koji Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing Ga-containing group III nitride semiconductor
- Patent number 9,190,268
- Issue date Nov 17, 2015
- TOYODA GOSEI CO. LTD.
- Koji Okuno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diode element with porous SiC emitting by donor acce...
- Patent number 9,099,597
- Issue date Aug 4, 2015
- Meijo University
- Satoshi Kamiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing semiconductor device
- Patent number 9,029,174
- Issue date May 12, 2015
- Meijo University
- Motoaki Iwaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor light emitting element
- Patent number 8,941,136
- Issue date Jan 27, 2015
- El-Seed Corporation
- Satoshi Kamiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum nitride single crystal forming polygonal columns and a pro...
- Patent number 8,921,980
- Issue date Dec 30, 2014
- Meijo University
- Hiroshi Amano
- C30 - CRYSTAL GROWTH
Information Patent Grant
AlGaN substrate and production method thereof
- Patent number 8,882,910
- Issue date Nov 11, 2014
- Toyoda Gosei Co., Ltd.
- Hiroshi Amano
- C03 - GLASS MINERAL OR SLAG WOOL
Information Patent Grant
Group III nitride semiconductor wafer and group III nitride semicon...
- Patent number 8,633,514
- Issue date Jan 21, 2014
- Sumitomo Electric Industries, Ltd
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride semiconductor epitaxial substrate and method for...
- Patent number 8,541,292
- Issue date Sep 24, 2013
- Showa Denko K.K.
- Akira Bando
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Group III nitride semiconductor wafer and group III nitride semicon...
- Patent number 8,148,751
- Issue date Apr 3, 2012
- Sumitomo Electric Industries, Ltd
- Shin Hashimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-emitting semiconductor device
- Patent number 7,985,964
- Issue date Jul 26, 2011
- Meijo University
- Satoshi Kamiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC crystal and semiconductor device
- Patent number 7,855,385
- Issue date Dec 21, 2010
- Meijo University
- Satoshi Kamiyama
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Two-light flux interference exposure device, two-light flux interfe...
- Patent number 7,756,189
- Issue date Jul 13, 2010
- Meijo University
- Satoshi Kamiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor and method of semiconductor fabrication
- Patent number 7,732,826
- Issue date Jun 8, 2010
- Satoshi Kamiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device and semiconductor device
- Patent number 7,612,381
- Issue date Nov 3, 2009
- Meijo University
- Satoshi Kamiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Filter function-equipped optical sensor and flame sensor
- Patent number 7,361,948
- Issue date Apr 22, 2008
- UV Craftory Co., Ltd.
- Akira Hirano
- G02 - OPTICS
Information Patent Grant
Diboride single crystal substrate, semiconductor device using this...
- Patent number 7,297,989
- Issue date Nov 20, 2007
- National Institute for Materials Science
- Shigeki Otani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus, method for growing nitride semiconductor a...
- Patent number 7,183,578
- Issue date Feb 27, 2007
- Kyocera Corporation
- Isamu Akasaki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR SUBSTRATE, AND...
- Publication number 20240347343
- Publication date Oct 17, 2024
- NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH...
- Manato DEKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20240071756
- Publication date Feb 29, 2024
- SUMCO CORPORATION
- Koji MATSUMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VAPOR PHASE EPITAXIAL GROWTH DEVICE
- Publication number 20230193512
- Publication date Jun 22, 2023
- National University Corporation Nagoya University
- Shugo NITTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE VAPOR PHASE EPITAXY APPARATUS AND MANUFACTURING MET...
- Publication number 20230073332
- Publication date Mar 9, 2023
- NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH...
- Shugo NITTA
- C30 - CRYSTAL GROWTH
Information Patent Application
LAMINATE AND SEMICONDUCTOR DEVICE
- Publication number 20220393073
- Publication date Dec 8, 2022
- IDEMITSU KOSAN CO.,LTD.
- Shigekazu TOMAI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LASER DIODE
- Publication number 20220337035
- Publication date Oct 20, 2022
- ASAHI KASEI KABUSHIKI KAISHA
- Ziyi ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LASER PROCESSING METHOD, SEMICONDUCTOR MEMBER MANUFACTURING METHOD,...
- Publication number 20220093463
- Publication date Mar 24, 2022
- National University Corporation Tokai National Higher Education and Research...
- Atsushi TANAKA
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
LASER PROCESSING METHOD, SEMICONDUCTOR MEMBER MANUFACTURING METHOD,...
- Publication number 20220055156
- Publication date Feb 24, 2022
- National University Corporation Tokai National Higher Education and Research...
- Atsushi TANAKA
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Application
OXIDE STACKED BODY AND METHOD FOR PRODUCING THE SAME
- Publication number 20220037561
- Publication date Feb 3, 2022
- IDEMITSU KOSAN CO.,LTD.
- Yoshihiro UEOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCING ULTRAVIOLET LASER DIODE, AND ULTRAVIOLET LASER...
- Publication number 20210320477
- Publication date Oct 14, 2021
- Asahi Kasei Kabushiki Kaisha
- Ziyi ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VAPOR PHASE EPITAXIAL GROWTH DEVICE
- Publication number 20210310154
- Publication date Oct 7, 2021
- NATIONAL UNIVERSITY CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH...
- Shugo NITTA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD...
- Publication number 20210210340
- Publication date Jul 8, 2021
- SUMCO CORPORATION
- Koji MATSUMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING OPTICAL DEVICE AND OPTICAL DEVICE
- Publication number 20210210924
- Publication date Jul 8, 2021
- Asahi Kasei Kabushiki Kaisha
- Ziyi ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20210151314
- Publication date May 20, 2021
- SUMCO CORPORATION
- Koji MATSUMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VAPOR PHASE EPITAXIAL GROWTH DEVICE
- Publication number 20200270767
- Publication date Aug 27, 2020
- National University Corporation Nagoya University
- Shugo NITTA
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING METHOD FOR GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE...
- Publication number 20180337306
- Publication date Nov 22, 2018
- SUMCO CORPORATION
- Koji MATSUMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
RADICAL GENERATOR AND MOLECULAR BEAM EPITAXY APPARATUS
- Publication number 20160355946
- Publication date Dec 8, 2016
- National University Corporation Nagoya University
- Masaru HORI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING A TEMPLATE FOR EPITAXIAL GROWTH HAVING A SAPPH...
- Publication number 20160319459
- Publication date Nov 3, 2016
- SOKO KAGAKU CO., LTD.
- Hiroshi Amano
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING OPTICAL DEVICE AND OPTICAL DEVICE
- Publication number 20150214423
- Publication date Jul 30, 2015
- TOKYO ELECTRON LIMITED
- Shinya KIKUTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING ROD-TYPE LIGHT EMITTING DEVICE AND ROD-TYP...
- Publication number 20150214429
- Publication date Jul 30, 2015
- TOKYO ELECTRON LIMITED
- Yoji IIZUKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING ELEMENT
- Publication number 20150091039
- Publication date Apr 2, 2015
- EL-SEED Corporation
- Satoshi Kamiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing Group III Nitride Semiconductor and Group III...
- Publication number 20140353804
- Publication date Dec 4, 2014
- Toyoda Gosei Co., Ltd.
- Koji OKUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Producing Group III Nitride Semiconductor
- Publication number 20140227864
- Publication date Aug 14, 2014
- Toyoda Gosei Co., Ltd.
- Koji OKUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING GROUP III NITRIDE SEMICONDUCTOR, METHOD OF FABRIC...
- Publication number 20140054680
- Publication date Feb 27, 2014
- Sumitomo Electric Industries, Ltd.
- Shin HASHIMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130330913
- Publication date Dec 12, 2013
- SOKO KAGAKU CO., LTD.
- Motoaki Iwaya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRODUCTION METHOD FOR GROUP III NITRIDE SEMICONDUCTOR AND GROUP III...
- Publication number 20130256743
- Publication date Oct 3, 2013
- Toyoda Gosei Co., Ltd.
- Koji OKUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING Ga-CONTAINING GROUP III NITRIDE SEMICONDUCTOR
- Publication number 20130260541
- Publication date Oct 3, 2013
- Toyoda Gosei Co., Ltd.
- Koji OKUNO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADICAL GENERATOR AND MOLECULAR BEAM EPITAXY APPARATUS
- Publication number 20130220223
- Publication date Aug 29, 2013
- KATAGIRI Engineering Co, Ltd.
- Masaru Hori
- C30 - CRYSTAL GROWTH
Information Patent Application
Template for Epitaxial Growth and Process for Producing Same
- Publication number 20120258286
- Publication date Oct 11, 2012
- Soko Kagaku Co., Ltd.,
- Hiroshi Amano
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR LIGHT EMITTING ELEMENT
- Publication number 20120228656
- Publication date Sep 13, 2012
- EL-SEED Corporation
- Satoshi Kamiyama
- H01 - BASIC ELECTRIC ELEMENTS

Hiroshi Amano

Person

Patents Grantslast 30 patents

Method of producing ultraviolet laser diode, and ultraviolet laser...

Vapor phase epitaxial growth device

Method for manufacturing optical device and optical device

Gallium nitride vapor phase epitaxy apparatus used in vapor phase e...

Vapor phase epitaxial growth device

Vapor phase epitaxial growth device

Manufacturing method for group III nitride semiconductor substrate...

Radical generator and molecular beam epitaxy apparatus

Production method for group III nitride semiconductor and group III...

Radical generator and molecular beam epitaxy apparatus

Method for producing a template for epitaxial growth having a sapph...

Method for producing group III nitride semiconductor

Method for producing Group III nitride semiconductor and Group III...

Method for producing Ga-containing group III nitride semiconductor

Light emitting diode element with porous SiC emitting by donor acce...

Method for manufacturing semiconductor device

Semiconductor light emitting element

Aluminum nitride single crystal forming polygonal columns and a pro...

AlGaN substrate and production method thereof

Group III nitride semiconductor wafer and group III nitride semicon...

Group III nitride semiconductor epitaxial substrate and method for...

Group III nitride semiconductor wafer and group III nitride semicon...

Light-emitting semiconductor device

SiC crystal and semiconductor device

Two-light flux interference exposure device, two-light flux interfe...

Semiconductor and method of semiconductor fabrication

Method for fabricating a semiconductor device and semiconductor device

Filter function-equipped optical sensor and flame sensor

Diboride single crystal substrate, semiconductor device using this...

Semiconductor apparatus, method for growing nitride semiconductor a...

Patents Applicationslast 30 patents

NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR SUBSTRATE, AND...

METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE

VAPOR PHASE EPITAXIAL GROWTH DEVICE

GALLIUM NITRIDE VAPOR PHASE EPITAXY APPARATUS AND MANUFACTURING MET...

LAMINATE AND SEMICONDUCTOR DEVICE

LASER DIODE

LASER PROCESSING METHOD, SEMICONDUCTOR MEMBER MANUFACTURING METHOD,...

LASER PROCESSING METHOD, SEMICONDUCTOR MEMBER MANUFACTURING METHOD,...

OXIDE STACKED BODY AND METHOD FOR PRODUCING THE SAME

METHOD OF PRODUCING ULTRAVIOLET LASER DIODE, AND ULTRAVIOLET LASER...

VAPOR PHASE EPITAXIAL GROWTH DEVICE

GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD...

METHOD FOR MANUFACTURING OPTICAL DEVICE AND OPTICAL DEVICE

METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE

VAPOR PHASE EPITAXIAL GROWTH DEVICE

MANUFACTURING METHOD FOR GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE...

RADICAL GENERATOR AND MOLECULAR BEAM EPITAXY APPARATUS

METHOD FOR PRODUCING A TEMPLATE FOR EPITAXIAL GROWTH HAVING A SAPPH...

METHOD FOR MANUFACTURING OPTICAL DEVICE AND OPTICAL DEVICE

METHOD FOR MANUFACTURING ROD-TYPE LIGHT EMITTING DEVICE AND ROD-TYP...

SEMICONDUCTOR LIGHT EMITTING ELEMENT

Method for Producing Group III Nitride Semiconductor and Group III...

Method for Producing Group III Nitride Semiconductor

METHOD OF FORMING GROUP III NITRIDE SEMICONDUCTOR, METHOD OF FABRIC...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PRODUCTION METHOD FOR GROUP III NITRIDE SEMICONDUCTOR AND GROUP III...

METHOD FOR PRODUCING Ga-CONTAINING GROUP III NITRIDE SEMICONDUCTOR

RADICAL GENERATOR AND MOLECULAR BEAM EPITAXY APPARATUS

Template for Epitaxial Growth and Process for Producing Same

SEMICONDUCTOR LIGHT EMITTING ELEMENT